• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.360-364
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• 2010

$Li_4Ti_5O_{12}$ thin film with inverse hemispheric structure was fabricated on a Pt/Ti/$SiO_2$/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at $400^{\circ}C$. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the $Li_4Ti_5O_{12}$ film with inverse hemispheric structure was superior to that of the flat $Li_4Ti_5O_{12}$ film.

• 한국재료학회지
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• 제27권3호
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• pp.161-165
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• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.

• 한국세라믹학회지
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• 제31권8호
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• pp.911-919
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• 1994

As the study for preparation of single-layer anti-reflective coating on glass, the conditions of synthesis of sol for coating and of reproducible coating procedure were investigated. In case of water-based sol, coating was impossible because of poor wettability of sol. The Substitution of solvent with ethanol improved the wettability of sol on the glass surface, and optimum amount of ethanol for substitution was 70 vol%. Maximum specific surface area and total pore volume of water-based sol were 268.7$m^2$/g and 0.315 cc/g, but after substitution, those values increased to 404.1 $m^2$/g and 0.376 cc/g, respectively. The upper limit withdrawl speed of coating in order to get clean coated films without aggregations or stains was 7 cm/min. In case of addition of 0.1 mol HNO3 and substitution with 70 vol% ethanol and heat-treatment at 40$0^{\circ}C$ for 1 hour, thin film with thickness of 94 nm was obtained at withdrawl speed of 4 cm/min. The thickness of thin film was independent of drying time.

• 한국표면공학회지
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• 제46권6호
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• pp.277-282
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• 2013

This study is an experimental attempt to confirm the binder effect of zeolite coating on glass plate by heat treatment. As a result, zeolite was successfully formed with low concentratios of pressure, whose concentration was effective in 10% or more for thin film zeolite coating. And as the content of the binder (TEOS) in mixed coating solution was higher, the zeolite was fastened better on the surface. Above 5% content of the binder in the coating solution, TEOS hindered zeolite synthesis of the precursor and brought to zeolite capacity decrease. Furthermore, when the concentration of the precursor, sedimentation rate of the precursor was higher and the coating efficiency is reduced thereby. Therefore, the most effective concentrations of the precursor and TEOS in the coating solution was 10% and 5%, respectively. It was concluded that zeolite coating is produced by heat treatment method after dipping without hydrothermal synthesis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.98-101
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• 1994

white diamond thin film, which should be compposed of almost ppure diamond, could be successfully obtained under high ppressure conditions(above 150 Torr) by means of MppECVD(microwave pplasma enhanced chemical vappor depposition, ASTeX 1.5 kW). Characteristics of the films with varing expperimental pparameters have been examined. From the expperimental results, we will discuss the surface morpphology and the growth mechanism of the films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• 한국세라믹학회지
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• 제42권7호
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• pp.461-468
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• 2005

Transparent TiO$_{2}$ sols were prepared by hydrothermal synthesis to heat Ti precursor solutions, from Ti hydroxides obtained with neutralizing aqueous TiOCl$_{2}$ solutions having various concentrations of NaCI by aqueous NaOH solution, in the autoclave at 120$^{\circ}C$ The photocatalytic abilities of glass beads coated with the sol for gaseous benzene were evaluated. As a result, it was found that due to the increase of brookite phase in TiO$_{2}$ by controlling the concentration of Na ion the optical absorption of TiO$_{2}$ increases toward long wavelength but that in the area of short wavelength becomes relatively low and consequently the photocatalytic performance of TiO$_{2}$ thin film for benzene gas rather decreases, compared to that of composite film of anatase and brookite phases. These results suggest that in order for coated TiO$_{2}$ thin film to have high dissociation performance for benzene gas it is effective to form anatase and brookite phases compositely in TiO$_{2}$.

• 한국세라믹학회지
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• 제31권7호
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• pp.804-812
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• 1994

Stable PZT coating sol was prepared using chelating agent, ethylacetoacetate(EAcAc) by sol-gel processing under ambient atmosphere. Through FT-IR spectrum analysis on solution of each reaction step, formation of metal complex was confirmed and prepared PZT sol was stable over several months. Through TG-DTA, XRD, FT-IR spetrum analysis of PZT gel powder, it was understood that the addition of EAcAc could reduce the transition temperature to ferroelectric phase, due to the increased homogeneity by matching the hydrolysis and condensation rates by chelation. Single perovskite phase was obtained by the heat-treatment at 54$0^{\circ}C$ for 30 min. The film was coated on ITO-coated glass substrate by dip coating method. After heat-treatment, PZT thin film had thickness in the range of 20~130 nm. The maximum dielectric constant of its thin film at room temperature and 1 kHz was 128.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.