• Title/Summary/Keyword: Switching power

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Output Characteristics of a Yb:YAG Laser Q-Switched by a Semiconductor Saturable Absorber and an Output Coupler Composed of a Polarizer and a Quarter-Wave Plate (편광기와 1/4 파장판으로 구성된 출력경과 반도체 포화 흡수체에 의해 Q-스위칭된 Yb:YAG 레이저 출력 특성 연구)

  • Ahan, Cheol Yong;Kim, Hyun Chul;Lim, Han Bum;Kim, Hyun Su
    • Korean Journal of Optics and Photonics
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    • v.25 no.2
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    • pp.90-94
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    • 2014
  • We propose a Yb:YAG laser Q-switched by a semiconductor saturable absorber and a laser output coupler composed of a polarizer and a quarter-wave plate, and we investigate the output characteristics of the proposed Q-switched laser. We show that the laser power can be varied by rotation of the quarter-wave plate.

Optimization of Q-switched Operation at a Laser-Diode Pumped Nd:YAG Ceramic Laser (반도체레이저 여기 세라믹 Nd:YAG 레이저에서 Q-스위칭 동작 최적화)

  • Shin, Dong-Joon;Kim, Byung-Tai;Kim, Duck-Lae
    • Korean Journal of Optics and Photonics
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    • v.19 no.4
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    • pp.320-326
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    • 2008
  • The output characteristics of a laser-diode pumped electrooptic Q-switched Nd:YAG ceramic laser were investigated. The output energy of a Q-switched Nd:YAG ceramic laser was optimized under an output coupler reflectivity of 77%, a laser-diode pulse width of $1,000\;{\mu}s$, and a delay time of $985\;{\mu}s$. The output energy of the Q-switched pulse was measured to be 0.35 mJ with a pulse width of 4 ns under a pump energy of 17.9 mJ. The output efficiency and the peak power were 1.9% and 87.5 kW, respectively.

Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication (p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발)

  • Jang, Won-Ho;Cha, Ho-Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.2
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    • pp.321-324
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    • 2020
  • In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.

The Impact of Transforming Unstructured Data into Structured Data on a Churn Prediction Model for Loan Customers

  • Jung, Hoon;Lee, Bong Gyou
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.14 no.12
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    • pp.4706-4724
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    • 2020
  • With various structured data, such as the company size, loan balance, and savings accounts, the voice of customer (VOC), which is text data containing contact history and counseling details was analyzed in this study. To analyze unstructured data, the term frequency-inverse document frequency (TF-IDF) analysis, semantic network analysis, sentiment analysis, and a convolutional neural network (CNN) were implemented. A performance comparison of the models revealed that the predictive model using the CNN provided the best performance with regard to predictive power, followed by the model using the TF-IDF, and then the model using semantic network analysis. In particular, a character-level CNN and a word-level CNN were developed separately, and the character-level CNN exhibited better performance, according to an analysis for the Korean language. Moreover, a systematic selection model for optimal text mining techniques was proposed, suggesting which analytical technique is appropriate for analyzing text data depending on the context. This study also provides evidence that the results of previous studies, indicating that individual customers leave when their loyalty and switching cost are low, are also applicable to corporate customers and suggests that VOC data indicating customers' needs are very effective for predicting their behavior.

Development of Smart ICT-Type Electronic External Short Circuit Tester for Secondary Batteries for Electric Vehicles (전기자동차용 2차전지를 위한 스마트 ICT형 전자식 외부 단락시험기 개발)

  • Jung, Tae-Uk;Shin, Byung-Chul
    • Journal of the Korean Society of Industry Convergence
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    • v.25 no.3
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    • pp.333-340
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    • 2022
  • Recently, the use of large-capacity secondary batteries for electric vehicles is rapidly increasing, and accordingly, the demand for technologies and equipment for battery reliability evaluation is increasing significantly. The existing short circuit test equipment for evaluating the stability of the existing secondary battery consists of relays, MCs, and switches, so when a large current is energized during a short circuit, contact fusion failures occur frequently, resulting in high equipment maintenance and repair costs. There was a disadvantage that repeated testing was impossible. In this paper, we developed an electronic short circuit test device that realizes stable switching operation when a large-capacity power semiconductor switch is energized with a large current, and applied smart ICT technology to this electronic short circuit stability test system to achieve high speed and high precision through communication with the master. It is expected that the inspection history management system based on data measurement, database format and user interface will be utilized as essential inspection process equipment.

Fluid Dynamics Analysis and Experimental Trial to Improve the Switching Performance of Eco-friendly Gas Insulated Switch (친환경 가스개폐기 개폐성능 향상을 위한 유동해석 및 실험)

  • Yu, Lyun;Ahn, Kil-Young;Kim, Young-Geun;Cho, Hae-Yong
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.21 no.9
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    • pp.42-49
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    • 2022
  • An underground electric switch is a high-voltage switch used in distribution network systems for a reliable power supply. Many studies are being conducted to expand the switch to use an eco-friendly gas using dry air instead of SF6 gas to reduce greenhouse gas emissions. In this study, a flow analysis model was established to improve the performance of an eco-friendly gas switch. The results were compared and reviewed through experiments. For the optimal arc grid design applied to the switch, the flow characteristics based on the flow path configuration and the changes in arcing time for each configuration were compared. Flow analysis can predict the switch flow distribution, and a comparative review of the flow path configurations of various methods is possible.

초소형 Travel Adapter 전력변환 기술 동향

  • Ji, Sang-Geun;Kim, Min-Ji
    • KIPE Magazine
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    • v.27 no.3
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    • pp.26-30
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    • 2022
  • 핸드폰, 노트북 빛 태블릿 PC와 같이 휴대할 수 있는 전자기기의 사용량이 높아질수록 대용량의 배터리를 필요로 하게 된다. 배터리 사양이 높아질수록 대용량의 배터리를 빠르게 충전시키는 어댑터 (Adapter)는 필수 요구 사항이 되었다. 고속 충전을 하기 위해선 높은 전류 공급 능력이 필요하며, 휴대성을 높이기 위해서 사이즈를 최소화하여 설계되어야 한다. 고효율 및 고밀도를 요구하는 시장에 걸맞게, 어댑터 시장 역시 Topology부터 사용 소자까지 많은 발전 중에 있다. 어댑터에 사용되는 대표적인 Topology는 절연에 용이하며 회로구조가 간단한 저비용, 고효율 Flyback Converter 회로가 기본적으로 사용된다. 하지만, 이 구조는 스위칭 주기마다 스위치 양단 전압 및 전류의 중첩에 의한 스위칭 손실이 불가피 하다는 단점이 존재한다. 그 단점을 보완하기 위해 RCD 스너버로 클램핑을 시켜줌과 동시에 변압기의 자화 인덕턴스와 스위치의 기생 커패시터의 공진 현상을 이용하여 스위치 양단 전압 VDS가 최소화되는 지점에서 다음 스위칭 동작을 수행하는 QR(Quasi-Resonant) Flyback Converter를 사용한 어댑터가 시장에서 주로 보였다. 하지만 QR Flyback Converter 역시 기존 방식보다 유리하지만 이 또한 스위칭 주파수 증가에 따른 한계가 존재한다. 따라서 현재는 영전압 스위칭 (Zero Voltage Switching, ZVS)이 가능한 ACF(Active Clamp Flyback) Converter 회로의 연구 개발이 활발히 진행되고 있다. 이때 스위칭 특성이 우수한 GaN-FET를 적용한 어댑터가 시장에 출시되고 있다. 특히, 이 시장에서는 GaN 소자를 적용한 어댑터를 차세대 전력 반도체 적용이라는 마케팅에도 이용되는 것을 확인할 수 있다.

A Hybrid Switching Modulation of Current-Fed Dual-Active-Bridge Converter for Energy Storage System (ESS용 전류원 DAB 컨버터의 하이브리드 스위칭 알고리즘에 관한 연구)

  • Heo, Kyoung-Wook;Choi, Hyun-Jun;Jung, Jee-Hoon
    • Proceedings of the KIPE Conference
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    • 2020.08a
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    • pp.109-111
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    • 2020
  • 본 논문에서는 ESS용 전류원 Dual-Active-Bridge 컨버터의 저 부하 및 고 부하에서의 효율 향상을 위한 하이브리드 스위칭 알고리즘을 제안하고자 한다. 전류원 DAB 컨버터는 인터리브 구조를 이용하여 배터리 단의 입력 전류 리플을 저감할 수 있고, 전력 변환 효율 개선을 위한 다양한 제어 변수를 도입할 수 있는 등의 장점으로 인해 DC 마이크로그리드에서 ESS용 절연형 양방향 DC/DC 컨버터로 주목받고 있다. 그러나 전류원 DAB에서 종래의 전력 제어 방법인 펄스폭 변조 방식과 위상천이가 결합된 방법 (PWM plus Phase Shift, PPS)의 경우 저 부하 조건에서 높은 피크 전류로 인해 도통 손실이 크며, 펄스폭 변조 방식과 이중 위상천이가 결합된 방법(PWM plus Dual Phase Shift, PPDPS)의 경우 고 부하 조건에서 영전압 스위치 영역이 좁아져 효과적이지 않다. 따라서 본 논문에서는 2차 측의 펄스폭과 위상천이를 독립적으로 제어하는 하이브리드 스위칭 알고리즘을 통해 순환전류를 감소시키고 영전압 스위치 영역을 확장시켜 저 부하 및 고 부하 모두에서 효율을 향상시키고자 한다. 1-kW급 전류원 DAB 컨버터 시작품을 통해 제안된 하이브리드 스위칭 알고리즘의 효율성과 타당성을 검증한다.

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Modulation Technique of Dual Active Bridge Converter to Improve Efficiency of Smart Transformers in Railroad Traction System (철도차량용 지능형 변압기 손실 저감을 위한 Dual Active Bridge 컨버터의 Modulation 기법 연구)

  • Kim, Sungmin;Lee, Seung-Hwan;Kim, Myung-Yong
    • Journal of the Korean Society for Railway
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    • v.19 no.6
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    • pp.727-735
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    • 2016
  • Smart transformers are effective at reducing the weight and increasing the efficiency of traction systems for railroad applications. A smart transformer generally consists of rectifier modules and the Dual-Active-Bridge (DAB) converter modules. The efficiency of the smart transformer depends on not only the electrical characteristics, but also on the control method of the converter modules. Especially, a DAB converter has a high order degree of freedom of voltage modulation to control the power transferred through the high frequency transformer, and a voltage modulation method, are very critical for the efficiency of the DAB converter. This paper proposes a new voltage modulation method for the DAB converter to increase the efficiency in the low/medium power transfer condition. The proposed modulation method controls the reactive power in the high frequency transformer, making it zero. And, the switching loss is dramatically reduced by using the received converter module as a diode rectifier. The feasibility of the proposed modulation method is verified by computer simulation of the 900Vdc DAB converter power control.

Design of Low-Area and Low-Power 1-kbit EEPROM (저면적.저전력 1Kb EEPROM 설계)

  • Yu, Yi-Ning;Yang, Hui-Ling;Jin, Li-Yan;Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.4
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    • pp.913-920
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    • 2011
  • In this paper, a logic process based 1-kbit EEPROM IP for RFID tag chips of 900MHz is designed. The cell array of the designed 1-kbit EEPROM IP is arranged in a form of four blocks of 16 rows x 16 columns, that is in a two-dimensional arrangement of one-word EEPROM phantom cells. We can reduce the IP size by making four memory blocks share CG (control gate) and TG (tunnel gate) driver circuits. We propose a TG switch circuit to supply respective TG bias voltages according to operational modes and to keep voltages between devices within 5.5V in terms of reliability in order to share the TG driver circuit. Also, we can reduce the power consumption in the read mode by using a partial activation method to activate just one of four memory blocks. Furthermore, we can reduce the access time by making BL (bit line) switching times faster in the read mode from reduced number of cells connected to each column. We design and compare two 1-kbit EEPROM IPs, two blocks of 32 rows ${\times}$ 16 columns and four blocks of 16 rows ${\times}$ 16 columns, which use Tower's $0.18{\mu}m$ CMOS process. The four-block IP is smaller by 11.9% in the layout size and by 51% in the power consumption in the read mode than the two-block counterpart.