• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.37-38
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• 한국재료학회지
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• 제30권2호
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 A
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• pp.188-190
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• 1995

This paper describes a soft switching using discontinuous inductor current. The soft switching snubber circuit provides ZCS and ZVS for main switch. For high power applications, the input ractifier is fed from a three-phase ac source. The Conventional switching method is hard switching technics, because of the device turn off is ocurred in maximum reactor current. In this time, switching losses are maximised by the hard switching. In generally, soft switching technique has been adjusted with the snubber condenser in order to compensates for this losses. So, it was compared hard switching with soft switching which has proposed in this paper for switching losses, distortion factor by the simulation.

• 전자공학회논문지
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• 제51권8호
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• pp.172-177
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• 2014

두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.31-35
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• 2020

원자층 증착법(ALD: atomic layer deposition)으로 성장된 ZnO n-type 산화물반도체를 이용하여 three terminal memristor (memtransistor) 소자를 제작하여 습도에 따른 그 특성을 관찰하였다. 40 nm 두께의 ZnO 박막을 이용하여 channel width 70 ㎛, length 5 ㎛, back gate 구조의 memtransistor 소자를 제작하여 습도에 (40%, 50%, 60%, 70%) 따른 gate tunable memristive 특성변화를 관찰하였다. 습도가 높아질수록 electron mobility와 gate controllability가 감소하여 수소도핑효과에 의한 carrier 농도가 증가하는 거동의 output curve가 관찰되었다. 60%, 70%의 습도에서 memristive 거동이 관찰되었으며 습도가 높아질수록 on/off ratio는 증가하는 반면 gate controllability가 감소하였다. 60% 습도에서 가장 우수한 특성의 gate tunable memristive 특성을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• 전자공학회논문지A
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• 제30A권10호
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• pp.20-26
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• 1993

The base-collector capacitance of an npn bipolar transistor in bipolar or BiCMOS technology has significant influence on the switching performances, and comprises pnjunction component and MOS component. Both components have complicated dependences on the isolation oxide structure, epitaxial doping density, and bias voltage. Analytical/empirical formulas for both components are derived in this paper for a generic isolation structure as a function of epitaxial doping density and bias voltage based on some theoretical understanding and two-dimensional device simulations. These formulas are useful in estimating the effect of device isoation schemes on the switching speed of bipolar transistors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.105-108
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• 2005

We demonstrate an electro-optical device based on the flexoelectric effect of a short-pitched cholesteric liquid crystal. By using a dual-frequency switchable nematic, a small amount of chiral dopant and a small amount of phase-separated polymer localized on the surface, we were able to create a device that operates in amplitude (flexoelectric) and phase(dielectric) modes. At high frequency the dual frequency liquid crystal suppresses the phase mode at higher voltage, which improves the switching speed, and thereby preserving the in-plane-switching mode.