• 한국지열·수열에너지학회논문집
• /
• 제8권2호
• /
• pp.9-15
• /
• 2012

The objective of this study is to investigate the influence on the heating performance for a water-to-water 10RT ground source heat pump by using the water switching and refrigerant switching method. The test of water-to-water ground source heat pump was measured by varying the compressor speed, load side inlet temperature, and ground heat source side temperature. The heating capacity and COP of the heat pump increased with increasing ground heat source temperature. As a result, compared to a refrigerant switching method, the water switching method with counter flow improves the heating capacity and COP by approximately 5% in average, respectively.

• 한국전기전자재료학회논문지
• /
• 제18권1호
• /
• pp.17-23
• /
• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• 한국고분자학회지:고분자과학과기술
• /
• 제8권3호
• /
• pp.326-336
• /
• 1997

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1992년도 하계학술대회 논문집 B
• /
• pp.1133-1135
• /
• 1992

This paper describes high frequency inverter using zero voltage switching(ZVS). The ZVS operation is achieved to reduce the switching stress and switching loss under high speed switching. The proposed circuit configuration and performance are discussed. Its operation characteristics are evaluated through computer-aided simulation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 B
• /
• pp.1002-1004
• /
• 2001

In conventional zero-current-switching(ZCS) PWM converters, the switching loss, stress and noise can't be minimized because they adopt auxiliary switches operated in hard-switching. In this paper, new ZCS-PWM converters of which auxiliary switches always operate with soft-switching are proposed. Therefore, the proposed ZCS-PWM converters are most suitable for systems requiring high-power density. The characteristics of these converters are verified by experimental results.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 B
• /
• pp.1193-1195
• /
• 2000

In conventional zero-current-switching(ZCS) PWM converters, the switching loss, stress and noise can't be minimized because they adopt auxiliary switches operated in hard-switching. In this paper, new ZCS-PWM converters of which auxiliary switches always operate with soft-switching are proposed. Therefore, the proposed ZCS-PWM converters are most suitable for systems requiring high-power density. The characteristics of these converters are verified by results of simulation.

• Journal of Photoscience
• /
• 제9권2호
• /
• pp.317-319
• /
• 2002

All-optical switching has been demonstrated in bacteriorhodopsin (bR) based on nonlinear intensity induced excited state absorption. The transmission of a cw probe laser beam at 410 nm corresponding to the peak absorption of M state through a bR film is switched by a pulsed pump laser beam at 570 nm that corresponds to the maximum initial 8 state absorption. The switching characteristics have been analyzed using the rate equation approach considering all the six intermediate states (B, K, L, M, N and 0) in the bR photocycle. The switching characteristics are shown to be sensitive to life time of the M state, absorption cross-section of the 8 state at probe wavelength ($\sigma$ $\_$Bp/) and peak pump intensity. It has been shown that the probe laser beam can be completely switched off (100 % modulation) by the pump laser beam at relatively low pump powers, for $\sigma$$\_$Bp/ = O. The switching characteristics have been used to design all-optical NOT, OR, AND and the universal NOR and NAND logic gates for optical computing with two pulsed pump laser beams.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.37-38
• /
• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• 한국재료학회지
• /
• 제30권2호
• /
• pp.99-104
• /
• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• E2M - 전기 전자와 첨단 소재
• /
• 제11권10호
• /
• pp.46-52
• /
• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.