• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.110-111
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• 2000

A novel 2$\times$2 switching characteristics are investigated. This switching characteristics are obtained in the multimode interference waveguide structure. For analysis, beam propagation method (BPM) based on mode propagation theory is used. As a result, the extinction ratio of higher than 11.74dB is achieved.

• Communications for Statistical Applications and Methods
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• 제21권6호
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• pp.501-512
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• 2014

Stylized facts on asset return are fat-tail, asymmetry, volatility clustering and structure changes. This paper simultaneously captures these characteristics by introducing a multi-regime models: Finite mixture distribution and regime switching GARCH model. Analyzing the daily KOSPI return from $4^{th}$ January 2000 to $30^{th}$ June 2014, we find that a two-component mixture of t distribution is a good candidate to describe the shape of the KOSPI return from unconditional and conditional perspectives. Empirical results suggest that the equality assumption on the shape parameter of t distribution yields better discrimination of heterogeneity component in return data. We report the strong regime-dependent characteristics in volatility dynamics with high persistence and asymmetry by employing a regime switching GJR-GARCH model with t innovation model. Compared to two sub-samples, Pre-Crisis (January 2003 ~ December 2007) and Post-Crisis (January 2010 ~ June 2014), we find that the degree of persistence in the Pre-Crisis is higher than in the Post-Crisis along with a strong asymmetry in the low-volatility (high-volatility) regime during the Pre-Crisis (Post-Crisis).

• Journal of Electrical Engineering and Technology
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• 제8권2호
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• pp.359-363
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• 2013

The 765kV transmission line will be maintained by live-line works for efficient operation. In order to maintain the 765kV transmission lines safely by live-line works, lineman has to know switching impulse flashover characteristics of the jumper V-strings with damaged insulators in advance. In order to know the flashover characteristics this paper carried out experimental flashover mockup tests for jumper V-string with damaged insulators in the outdoors. And it suggests flashover characteristics of the 765kV jumper V-strings also. The results will be used in estimating the safety of live working for 765kV transmission lines.

• 센서학회지
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• 제29권5호
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• pp.332-335
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• 2020

Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.

• 전자공학회논문지
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• 제53권12호
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• pp.88-93
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• 2016

본 논문에서는 유한체의 수학적 성질과 그래프이론을 바탕으로 GF(P)상의 선형디지털스위칭함수구성을 효과적으로 구성하는 한가지 방법을 제안하였다. 제안한 방법은 주어진 임의의 디지털스위칭함수의 입출력 사이의 연관관계특성으로 부터 DCG를 도출한 후에 노드의 개수를 인수분해한다. 이때 행렬방정식을 해당 차수보다 낮은 기약다항식으로 인수분해하여 그 결과를 부분회로실현한 다음 선형결합함으로써 최종 선형디지털스위칭함수를 구성하였다. 그 결과 기존의 방법에 비해 선형디지털스위칭함수구성을 상당히 간단화 할 수 있었으며 회로구성은 유한체 GF(P)내에서 정의된 가산기와 계수곱셈기를 사용하여 용이하게 실현 할 수 있다.

• Journal of Information Display
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• 제10권4호
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• pp.175-179
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• 2009

As the physical properties of nematic liquid crystals vary with respect to temperature, the performances of liquid crystal displays (LCDs) are highly dependent on temperature. Additionally, it is well known that the electro-optic characteristics of LCDs, such as transmittance and threshold voltage, also rely on the LCD switching modes. The temperature dependence of the electro-optic characteristics of the wide-viewing-angle LCD modes, such as in-plane switching (IPS), multidomain vertical alignment by patterned electrode (PVA), and fringe-field switching (FFS), have been studied, and the results showed that the FFS mode has lower temperature dependence compared to the IPS and PVA modes. Since the liquid crystal (LC) reorients in different ways in each mode, this result is associated with the temperature dependence of LC's bend and twist elastic constants, and also with the position of the main reorientation, either in the middle or on the surface of the LC layer.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.914-922
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• 2003

The FFS (fringe-field switching) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using a liquid crystal with negative dielectric anisotropy. We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}$m, the transmittance at the center of pixel and common electrodes is relatively low because effect of surface anchoring that holds the LC to the initial state is larger than that in a large cell gap of 4 .urn such that the LCs in those regions cannot rotate enough. However, in case of a large cell gap of 4 .urn, the effect of surface anchoring becomes relatively small so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we can conclude that the light efficiency is dependent on the cell gap.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• 한국정보통신학회논문지
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• 제12권12호
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• pp.2201-2206
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• 2008

본 논문에서는 유한체의 수학적 성질과 그래프이론을 바탕으로 GF(P)상의 선형디지털스위칭함수구성을 효과적으로 구성하는 한가지 방법을 제안하였다. 제안한 방법은 주어진 임의의 디지털스위칭함수의 입출력 사이의 연관관계특성으로 부터 DCG를 도출한 후에 노드의 개수를 인수분해한다. 이때 행렬방정식을 해당 차수보다 낮은 기약다항식으로 인수분해하여 그 결과를 부분회로실현한 다음 선형결합함으로써 최종 선형디지털스위칭함수를 구성하였다. 그 결과 기존의 방법에 비해 선형디지털스위칭함수구성을 상당히 간단화 할 수 있었으며 회로구성은 유한체 GF(P)내에서 정의된 가산기와 계수곱셈기를 사용하여 용이하게 실현 할 수 있다.