• 제목/요약/키워드: Switching behavior

검색결과 359건 처리시간 0.026초

산소 분압의 변화에 따른 Cr-Doped SrZrO3 페로브스카이트 박막의 저항변화 특성 (Resistive Switching Behavior of Cr-Doped SrZrO3 Perovskite Thin Films by Oxygen Pressure Change)

  • 양민규;박재완;이전국
    • 한국재료학회지
    • /
    • 제20권5호
    • /
    • pp.257-261
    • /
    • 2010
  • A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

멀티샵의 점포이미지가 점포충성도 및 상표전환행동에 미치는 영향에 관한 연구 (The Effects of Multi-Shop's Store Image on the Store Loyalty and Brand Switching Behavior)

  • 이승희;조세나
    • 대한가정학회지
    • /
    • 제45권1호
    • /
    • pp.51-61
    • /
    • 2007
  • The purpose of this study was to examine if multi-shop's store image affects store loyalty and brand switching. Two hundred fifty females and males who have purchased fashion products in multi-shop participated in this survey. For data analysis, descriptive statistics, factor analysis, Pearson's correlation and regression analysis were used for this study. The results were as followed. First, respondents' the most favorite multi-shop was MUE, followed by Boon the shop and ABC mart. Second, store image was classified into four factors such as store atmosphere, service of store, store recognition and product variety. Store loyalty was classified into five factors such as emotional relationship, pursue of novelty, trust about salesperson, satisfaction about service, and active loyalty. Third, result revealed that 'product variety' and 'store atmosphere', 'store recognition', 'service of store' accounted for 39.6% of the explained varience in store loyalty, and 'store recognition' accounted for 4% of the explained varience in brand switching behavior, while 'trust about salesperson', 'pursue of novelty' accounted for 5% of the explained varience in brand switching behavior. Based on these results, multi-shop's fashion marketing strategy would be suggested.

Improved Circuit Model for Simulating IGBT Switching Transients in VSCs

  • Haleem, Naushath Mohamed;Rajapakse, Athula D.;Gole, Aniruddha M.
    • Journal of Power Electronics
    • /
    • 제18권6호
    • /
    • pp.1901-1911
    • /
    • 2018
  • This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

지방 독점 백화점 고객들의 전환행동에 관한 연구 (Study on the Switching behavior of Customers of Local Monopolistic Department Store)

  • 강희숙
    • 마케팅과학연구
    • /
    • 제12권
    • /
    • pp.29-57
    • /
    • 2003
  • 대형 백화점들의 다점포화전략, 할인점의 증가, 무점포업태의 성장 등으로 지방 백화점 고객들이 점포 전환을 용이하게 할 수 있는 유통환경이 조성되고 있다. 따라서 그동안 제한된 경쟁상황에서 영업활동을 해 온 지방 백화점들은 고객전환행동에 대한 폭넓은 이해를 필요로 하고 있다. 본 연구는 지방 독점백화점 고객들의 전환행동 특성파악을 위해 선행연구를 검토한 후 유통환경의 급격한 변화속에서 고객들의 전환행동 특성을 불만즉요인, 전환장벽, 전환의도, 고객육특성(쇼핑향유성향, 다양성추구성향, 경쟁에의 노출정도, 인구통계특성)의 관계를 중심으로 파악해 보았다. 그 결과 불만족요인 평가는 고객의 특성(쇼핑향유성향, 경쟁에의 노출정도)에 따라 차이가 있으며, 전환장벽 인식은 고객의 특성(경쟁에의 노출정도, 인구통계특성) 및 불만족요인 평가에 따라 차이가 있고 예상경쟁자로의 전환의도는 고객의 특성(쇼핑향유성향, 경쟁에의 노출정도, 인구통계특성) 및 전환장벽 인식에 따라 차이가 있는 것으로 나타났다. 따라서 경쟁자의 시장진입을 눈앞에 두고 있는 지방 독점백화점의 전환관리는 고객특성 파악과 고객불만족을 감소시키려는 노력을 중심으로 이루어져야 할 것으로 보인다.

  • PDF

GENETIC PROGRAMMING OF MULTI-AGENT COOPERATION STRATEGIES FOR TABLE TRANSPORT

  • Cho, Dong-Yeon;Zhang, Byoung-Tak
    • 한국지능시스템학회:학술대회논문집
    • /
    • 한국퍼지및지능시스템학회 1998년도 The Third Asian Fuzzy Systems Symposium
    • /
    • pp.170-175
    • /
    • 1998
  • Transporting a large table using multiple robotic agents requires at least two group behaviors of homing and herding which are to bo coordinated in a proper sequence. Existing GP methods for multi-agent learning are not practical enough to find an optimal solution in this domain. To evolve this kind of complex cooperative behavior we use a novel method called fitness switching. This method maintains a pool of basis fitness functions each of which corresponds to a primitive group behavior. The basis functions are then progressively combined into more complex fitness functions to co-evolve more complex behavior. The performance of the presented method is compared with that of two conventional methods. Experimental results show that coevolutionary fitness switching provides an effective mechanism for evolving complex emergent behavior which may not be solved by simple genetic programming.

  • PDF

Switching Characteristics of Amorphous GeSe TFT for Switching Device Application

  • 남기현;김장한;조원주;정홍배
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.403-404
    • /
    • 2012
  • We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

  • PDF

Electrical Switching Characteristics of Thin Film Transistor with Amorphous Chalcogenide Channel

  • 남기현;김장한;정홍배
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
    • /
    • pp.280-281
    • /
    • 2011
  • We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

  • PDF

Effect of Al Doping Concentration on Resistance Switching Behavior of Sputtered Al-doped MgOx Films

  • 이규민;김종기;박성훈;손현철
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
    • /
    • pp.307-307
    • /
    • 2012
  • In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

  • PDF

물리적 매장이 시장에서 살아남는 방법: 소비자의 온라인 채널에서 오프라인 채널로의 전환행동에 관한 연구 (How do Physical Stores Survive in the Market: An Investigation into Consumer Switching Behavior from the Online to the Offline Channel)

  • 단샤오웨이;종루
    • 한국콘텐츠학회논문지
    • /
    • 제22권1호
    • /
    • pp.224-239
    • /
    • 2022
  • 온라인 판매가 무서운 성장세를 보여주고 있음에도 불구하고, 소비자 채널 전환행동 영역에서 오프라인 밴드왜건이 여전히 많은 주목을 받고 있다. 소비자의 오프라인에서 온라인 소매업자로의 전환행동을 탐색하는 기존연구와 달리, 본 연구는 push-pull-mooring 모델을 기반으로 소비자가 온라인에서 오프라인 채널로 전환하는 이유와 시점에 중점을 두어 살펴본다. 따라서, 본 연구는 구조방정식 모델과 SPSS를 이용하여 설립된 연구가설을 검증하였다. 그 결과는 예상대로 push 요인(지각된 위험과 불만족)과 pull 요인(대안매력과 지각된 주인의식)이 모두 소비자의 온라인에서 오프라인 채널로의 전환의도에 긍정적 영향을 미치는 것으로 나타났다. 또한, push 요인과 전환비용간의 상호작용 및 pull 요인과 주관적 규범간의 상호작용을 제외하고, 모든 push 요인과 mooring 요인(전환비용, 다양성 추구 성향과 주관적 규범)간의 상호작용 및 pull 요인과 mooring 요인간의 상호작용이 검증되었다. 마지막으로 시사점과 한계점을 더불어 제시하였다.

Consumers' Motivations for Brand-Switching of Sport Shoes according to Their Age and Gender

  • Yim, Eun-Jin;Hwang, Choon-Sup
    • 패션비즈니스
    • /
    • 제13권6호
    • /
    • pp.111-124
    • /
    • 2009
  • The purpose of the study was to provide the basic information that is needed to build marketing strategies related to consumers' brand-switching, through investigation into sport shoe consumers' motivations for brand-switching, as determined by their age and gender. The study was implemented by means of a descriptive survey method using a questionnaire. The sample consisted of 534 consumers between the ages of 13 and 59, residing in the Seoul area. The survey for the study was conducted during the period of October 10 through December 5, in 2008. Descriptive statistics, t-test, ANOVA and Duncan's Test were employed for the analysis of data gathered. The results revealed that there are differences with regard to the degree that the functional/aesthetic factors of sport shoes contribute to the motivation for brand-switching, when assessed with respect to the age and gender of consumers. The contributory degrees of situational factors and social/emotional curiosity factors of consumers are also different with regard to the motivation for brand-switching behavior of sport shoe consumers in accordance with their age and gender. Therefore, marketing strategies related to brand-switching behavior will be more effective when they are differentiated according to the target age and gender, even with respect to the same type of product, such as sport shoes.