• 제목/요약/키워드: Switched Trans Cell

검색결과 2건 처리시간 0.017초

ST Quasi Z-소스 인버터의 스트레스 저감과 출력전압 특성 (Characteristics of the Stress Reduction and Output Voltage of ST(Switched Trans) Quasi Z-Source Inverter)

  • 김세진;정영국;임영철
    • 전력전자학회논문지
    • /
    • 제18권1호
    • /
    • pp.1-9
    • /
    • 2013
  • This paper proposes a ST(Switched Trans) quasi Z-source inverter using a Switched Trans Cell combing the characteristics of a Switched Inductor Cell and Trans. A DC link inductor of the conventional quasi Z-source inverter is alternated with Switched Trans Cell of the proposed ST quasi Z-source inverter. Trans Cell of the proposed method consists of one Trans and two diodes, and the proposed method has higher and more various boost function than the conventional quasi Z-source inverter by simply changing the turns ratio of primary and secondary of the Trans. The validity of the proposed ST Z-source inverter was confirmed by PSIM simulation and a DSP based experiment under the input voltage 48V and output phase voltage 30V. As a result, when compared with the traditional quasi Z-source inverter, the proposed method has the advantage of the low voltage stress under the same output voltage condition of the voltage.

3상 Switched Trans Z-소스 직류/교류 전력변환기의 스트레스 및 과도상태 특성 (Characteristics of Transient State and Stress of Three-Phase Switched Trans Z-Source DC/AC Power Converter)

  • 임영철;김세진;정영국
    • 조명전기설비학회논문지
    • /
    • 제26권4호
    • /
    • pp.57-66
    • /
    • 2012
  • When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.