• 전기학회논문지P
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• 제61권4호
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• pp.192-198
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• 2012

Switch losses directly affect the efficiency of power conversion systems and those have big differences according to the power consumed by load systems and the structures of power conversion circuits. In this paper, analyses for switch losses in DC link converter are performed based on the circuit structures of the DC/DC converter in photovoltaic generation system whose output power is varied according to the amount of solar radiation, temperature and partial shade on the solar modules. Boost converter is adopted as a DC link converter topology of the photovoltaic generation system and the loss analyses for the switches used in the boost converters are performed according to the circuit structures. Analyses like the things performed in this paper will be a prerequisite to designing the photovoltaic generation system whose output power is changed according to the environmental variations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.75-78
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• 1998

In this paper, we propose a new cell discarding and scheduling scheme which reduce cell loss rate by measuring, in real time, the number of discarded cells in the queuing system with a different loss priority for each class of service such that each class of service meets its cell loss rate requirements and reduce average delay rate for the traffic that is sensitive in cell delay in output buffer of the ATM switch. Throughout the computer simulation, the existing scheduling scheme and proposed scheme are compared with respect to cell loss rate and average delay time.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1991년도 추계종합학술발표회논문집
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• pp.141-144
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• 1991

In this paper, we analyze the performance of ATM switch with output buffer which has a space priority control mechanism. As we assumed that the input traffic consists of loss tolerable voice and loss sensitive data, we modeled it with MMPP(Markov Modulated Poisson Process). We confirmed that the loss probability of loss sensitive traffic decreases when we use the space priority control mechanism.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 추계학술대회
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• pp.133-134
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• 2017

This paper analyzes switch Device losses and efficiency depending on SiC and Si devices. The switch devices loss is compared to Si and SiC-based elements through Threshold Voltage and Miller Platequ Voltage. And analyzed through comparison of each switching loss by experiment.

• 전자공학회논문지A
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• 제32A권8호
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• pp.153-165
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• 1995

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

• 한국전자파학회논문지
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• 제16권2호
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• pp.167-173
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• 2005

직렬 PIN 다이오드 스위치의 격리도는 PIN 다이오드의 병렬 커패시턴스에 의해 제한을 받으며, 스위치 구동회로는 PIN 다이오드 스위치의 스위칭 속도를 제한한다. 이런 문제를 극복하기 위해, 병렬 공진 인턱턴스와 TTL 호환의 스위치 구동회로가 적용된 높은 격리도와 고속 스위칭의 PIN 다이오드 스위치를 제안하였다. 3 GHz PIN 다이오드 스위치의 측정 결과, 1 GHz의 주파수 대역폭, 1.5 dB 이내의 삽입 손실, 65 dB의 격리도, 15 dB 이상의 반사 손실 그리고 30 ns 이내의 스위칭 속도를 나타내었다. 특히, 병렬 공진 인덕턴스를 사용한 3 GHz스위치는 15 dB의 격리도 향상을 나타내었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.663-664
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• 2012

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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• pp.292-295
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• 2005

Variable optical attenuators (VOA) made of low-loss fluorinated polymers are demonstrated which shows a low operating power less than 30 mW due to the superior thermo-optic effect of polymer material and a low insertion loss less than 1.0 dB by incorporating highly fluorinated polymers to reduce the absorption loss at 1550 nm. An attenuator-integrated low-crosstalk polymeric digital optical switch (DOS) is also demonstrated. The switch and attenuator shares a single connected electrode which is controlled by a single current source. Due to the simple structure of the integrated attenuator, the device length is reduced to 1 cm so as to provide low insertion loss of 0.8 and 1.1 dB for 1300 and 1550 nm, respectively. The attenuator radiates remained optical signal on the switch-off branch in order to decrease the switching crosstalk to be less than -70 dB with an applied electrical power of 200 mW.

• Journal of international Conference on Electrical Machines and Systems
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• 제3권4호
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• pp.465-471
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• 2014

This paper proposes a new switching algorithm for an active clamp snubber to improve the efficiency of a module integrated converter system. This system uses an active clamp method for the snubber circuit for the efficiency and reliability of the system. However, the active clamp snubber circuit has the disadvantage that system efficiency is decreased by switch operating time because of heat loss in resonance between the snubber capacitor and leakage inductance. To address this, this paper proposes a new switching algorithm. The proposed algorithm is a technique to reduce power consumption by reducing the resonance of the snubber switch operation time. Also, the snubber switch is operated at zero voltage switching by turning on the snubber switch before main switch turn-off. Simulation and experimental results are presented to show the validity of the proposed new active clamp control algorithm.

• Journal of electromagnetic engineering and science
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• 제8권3호
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• pp.96-99
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• 2008

This paper describes a $0.13-{\mu}m$ CMOS RF switch for $3{\sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{\sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm.