• 전기학회논문지
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• 제62권2호
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• pp.190-195
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• 2013

Vacuum circuit breaker(VCB) has been widely used for interruption of load current and fault current for high voltage motor in the industrial field. Its arc extinguishing capability is excellent compared to other breakers. But it has the potential to cause multi reignition surge by high extinguishing capability. Surge voltage is generated by the opening and closing of VCB. Multi reignition surge of VCB is steep-fronted waveform. It may have a detrimental effect on the motor winding insulation. So, most of users install a protection device to limit steep-front waveform at the motor terminal or breaker side. So, most of users install a protection device at the motor terminal or breaker side. This protective device is surge absorber(SA) such as ZnO and RC type. In this study, we analyzed whether there is any effect when two type SA is applied to the VCB multi reignition surge. We confirmed that ZnO SA is slightly more effective than RC SA for reduction of multi reignition surge.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.100-102
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• 1994

VCB, with its big arc extinction in very short switching time, produces the high switching surge voltage which may cause the breakdown of motor insulation or acceleration of insulation deterionation. To protect motor winding insulation, we developed the computer algorithm for simulating the surge occurred in VCB by EMTP. And we established the effect of the C-R surge absorber by the surge measurement in the motor-VCB circuit.

• 전기기술인
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• 제181권9호
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• pp.33-34
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• 1997

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• 조명전기설비학회논문지
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• 제28권9호
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• pp.52-59
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• 2014

The aims of this paper are to characterize the transient overvoltages(TOVs) and to evaluate the risk occurring at 22.9kV consumer's substation. The measurements of lightning- and switching-caused TOVs were made during Mar. 2013 and Feb. 2014. As a consequence, 47 events of TOVs were recorded and 4 of them were higher than the input voltage envelope(IVE) of the information technology industry council(ITI) curve. The measured TOVs are characterized by longer front times and longer durations compared to the $1.2/50{\mu}s$ standard impulse voltage waveform, and some of them represent bipolar waves with lower oscillation frequencies. It suggests that the test of non-standard impulse voltage waveforms is needed for effective risk assessments of power apparatus. Lightning- and switching-caused TOVs exceeding IVE of ITI curve are induced at the secondary of 22.9kV potential transformer(PT). We may, therefore, conclude that the surge protection devices should be applied at the secondary of PT and the surge absorbers should be installed at the primary of VCB or PT. The results presented in this paper could be useful to design the reasonable insulation coordination for 22.9kV consumer's substation.

• 한국조명전기설비학회지:조명전기설비
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• 제11권6호
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• pp.96-103
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• 1997

본 논문은 뇌임펄스전압에 대한 누전 차단기의 오동작 특성에 관한 것으로 한국공업규격 KS C 4613의 규정과 서지보호장치를 갖는 모의회로의 조건에서 누전차단기의 부동작 특성을 실험적으로 조사하고 검토하였다. 실험 결과, 본 연구에 사용한 30[A]용 고감도형 누전 차단기인 모든 시료는 증폭회로의 전원부에 설치된 서지보호장치에 의해 입사되는 차동모드의 뇌임펄스전압에 차단되는 성능을 가지고 있었다. 4종의 시료는 KS C 4613에 정의된 뇌임펄스 부동작시험조건을 만족시키지 못하였으며, 그때의 오동작을 유발한 전압은 약 5∼6.5[kV]로 비교적 높았다. 서지보호장치가 설치된 경우를 모의한 시험조건에서는 3종의 누전차단기가 오동작하였으며, 누전차단기가 오동작을 일으키는 전압도 약 3∼5[kV] 정도로 비교적 낮았다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.128-132
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• 2003

This paper deals with the development of IGBT stacks for cost reduction. One stack is consist of 4 IGBTS in parallel. In the high- and mid-power converters, IGBT stacks are more suitable than single IGBTS in the aspects of total cost of semiconductor devices, time for purchasing, maintenance, radiation of heat, size of surge absorber and harmonic filter, frequency characteristics, and etc.. Problems accompanied by parallel construction are studied and solved. Economical efficiency is discussed and field tests with 100kVA UPS are tarried out to verify the validity of the developed IGBT stacks.