• Progress in Medical Physics
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• v.8 no.2
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• pp.45-57
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• 1997

It is mandatory to measure accurately the dose distribution and the total absorbed dose of fast neutron for putting it to the clinical use. At present the methods of measurement of fast neutron are proposed largely by American Associations of Physicists in Medicine, European Clinical Neutron Dosimetry Group, and International Commission on Radiation Units and Measurements. The complexity of measurement, however, induces the methodological differences between them. In our study, therefore, we tried to establish a unique technique of measurement by means of measuring the emitted doses and the dose distribution of fast neutron beam from neutron therapy machine, and to invent a standard method of measurement adequate to our situation. For measuring the absorbed doses and the dose distribution of fast neutron beam, we used IC-17 and IC-18 ion chambers manufactured by A-150 plastic(tissue-equivalent material), IC-17M ion chamber manufactured by magnesium, TE gas and Ar gas, and RDM 2A electrometer. The magnitude of gamma-contamination intermingled with fast neutron beam was about 13％ at 5cm depth of standard irradiated field, and increased as the depth was increased. At the central axis the maximum dose depth and 50％ dose depth were 1.32cm and 14.8cm, respectively. The surface dose rate was 41.6-54.1％ throughout the entire irradiated fields and increased as the irradiated fields were increased. Beam profile was that the horn effect of about 7.5％ appeared at 2.5cm depth and the flattest at 10cm depth.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1417-1422
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• 2005

Among the sensors mainly used for displacement measurement, there are a linear CCD(Charge Coupled Device) and a PSD(Position Sensitive Detector) as a non-contact type. Their structures are different very much, which means that the signal processing of both sensors should be applied in the different ways. Most of the displacement measurement systems to get the 3-D shape profile of an object using a linear CCD are a computer-based system. It means that all of algorithms and mathematical operations are performed through a computer program to measure the displacement. However, in this paper, the developed system has microprocessor and other digital components that make the system measure the displacement of an object without a computer. The thing different from the previous system is that AVR microprocessor and FPGA(Field Programmable Gate Array) technology, and a comparator is used to play the role of an A/D(Analog to Digital) converter. Furthermore, an ATC(Automatic Threshold Control) algorithm is applied to find the highest pixel data that has the real displacement information. According to the size of the light circle incident on the surface of the CCD, the threshold value to remove the noise and useless data is changed by the operation of AVR microprocessor. The total system consists of FPGA, AVR microprocessor, and the comparator. The developed system has the improvement and shows the better performance than the system not using the ATC algorithm for displacement measurement.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.21 no.1
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• pp.30-38
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• 2009

In recent years, there's been strong demand for coastal structures that have a permeability that serves water affinity and disaster prevention from wave attack. The aim of this study is to examine the wave transformation, including wave run-up that propagates over the coastal structures with a steep slope. A numerical model based on the nonlinear shallow water equation, together with the unsteady nonlinear Darcy law for fluid motion in permeable underlayer and laboratory measurements was carried out in terms of the free surface elevations and fluid particle velocities for the cases of regular and irregular waves over 1:5 impermeable and permeable slopes. The numerical results were used to evaluate the application and limitations of the PBREAK numerical model. The numerical model could predict the cross-shore variation of the wave profile reasonably, but showed less accurate results in the breaking zone that the mass and momentum influx is exchanged the most. Except near the wave crest, the computed depth averaged velocities could represent the measured profile below the trough level fairly well.

• Spatial Information Research
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• v.10 no.2
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• pp.317-329
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• 2002

Coastal landforms such as sand beach and coastal sand dune are changing dynamically, and the research about them is being conducted. Conventionally the leveling method has been applied to measuring heights of dynamic morphological surface in coastal landforms. We applied the photograrmmetric method which was not considered to measure the heights on coastal sand dune’s profile to calculating the heights of coastal sand dune; that is, the heights of unknown points on coastal sand dune’s profile was reckoned from the digital photographs’stereo pairs through bundle adjustment and backward transform of collinearity condition equation. we used six GCPs to perform bundle adjustment. After backward transform the error of heights between surveyed value and computed value was estimated around 10cm. In general, the pole is not adamantly fixed on the surface of coastal sand dune because of its softness, and then the disturbance of coastal sand dune adjoining surveyed area can be made in small area. Digital photogrammetry can solve the problem which conventional leveling method has, and be replaced it.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.34-40
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• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

• Korean Journal of Remote Sensing
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• v.25 no.2
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• pp.155-163
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• 2009

An abundance of internal waves is observed by SAR in the Yellow Sea during summer. They are small scaled internal waves and are not relatively studied well compared to the ones in the East/South China Sea. These internal waves should be considered in the study of physio-biological properties of the Yellow Sea because the mixing of the stratified surface water caused by internal waves during summer is important for ocean biological environment, and they also affect the sediment transport and acoustic signal transmission in the continental shelf region. To understand the characteristics of internal waves, it is important to get the spatio-temporal information of internal waves simultaneously by executing in-situ measurements as well as the SAR observation. This study tracks the internal waves observed by SAR in the time series of temperature profile data by analyzing simultaneously acquired in-situ measurement data and RADARSAT SAR image on 29 May 2002.

• Journal of the Korean Society of Visualization
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• v.22 no.2
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• pp.74-81
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• 2024

Accurate tissue temperature monitoring during clinical procedures, such as laser therapy or surgery, is crucial for ensuring patient safety and treatment efficacy. Noninvasive techniques are essential to prevent tissue disturbance while providing real-time temperature data. However, current methods often struggle to accurately measure temperature at various depths within the skin, which is essential to avoid damage to surrounding healthy tissues due to excessive heat. In response to this challenge, we developed a confocal imaging system that utilizes the laser speckle imaging (LSI) technique for precise depthwise temperature monitoring. LSI uses laser light scattering to capture subtle changes in speckle patterns on the skin's surface due to temperature fluctuations within the tissue. By analyzing these changes, LSI enables accurate depth-resolved temperature measurements. This technique enhances the precision and safety of medical procedures, offering significant potential for broader clinical applications, improved patient outcomes, and better thermal management during interventions.