• Journal of Korean Society of Industrial and Systems Engineering
• /
• v.30 no.2
• /
• pp.8-14
• /
• 2007

The powder blasting process has become an important machining technique for the cost effective fabrication of micro devices. This process is similar to sand blasting, and effectively removes hard and brittle materials. A large number of investigations on the abrasive jet machining with such output parameters as material removal rate, penetration and surface roughness have been carried out and reported by various authors. To achieve higher surface roughness, to increase material removal rate and to identify the influence of blasting parameters on the output parameters, we use the taguchi method which is one of the design methods of experiments. We can select process parameters to optimize the blasting process of glass. Experimental results indicate that the taguchi method is useful as a robust design methodology for the powder blasting process.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.2 s.173
• /
• pp.311-318
• /
• 2000

Several factors which influence baseline instability (BLI) phenomenon in MR drive were investigated experimentally. In particular, the role of surface topography on BLI was studied in detail. The r esults show that BLI is linearly proportional to the surface waviness with a spatial wavelength of 0.4 to 5.0 min. BLI becomes worse as the surface waviness increases. On the other hand, surface roughness which has a spatial wavelength below 25 $\mu$ m has no effect on BLI. The results further show that the effect of bias current on the BLI is amplified on the disk with worse surface waviness. The disk surface waviness is dependent on the manufacturing process and becomes an inherent surface property of media. The disk surface waviness. therefore, can not be overlooked when evaluating the media for a high-performance hard disk drive. In general, waviness is reduced mainly during grinding and polishing process during manufacturing.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.3 no.3
• /
• pp.64-70
• /
• 2004

The sub-surface stress field beneath the spur gear's contact surface in lubricated condition has been analysed. The surface pressure was obtained by the elasto-hydrodynamic lubrication analysis using the accurate geometric clearances around the contact region of the teeth. The sub-surface stress field was calculated by using the Love's rectangular patch solution. The analysis results show that the sub-surface stress distribution is quite dependent on the surface pressure distribution. The pattern of sub-surface stress field is similar to that of the external load. The depth where the maximum effective stress occurs is not proportional to the intensity of the external load.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.4
• /
• pp.153-160
• /
• 2001

In order to analyze the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature. Then, the degradation process was evaluated by comparing contact angle, surface potential, surface resistivity, and XPS. The experimental results showed that the amount of weight loss, contact angle, surface potential and surface resistivity increased up to 200 $^{\circ}C$ as a function of temperature. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. In XPS to analyze surface chemical structures, the increased hydrophobicity in thermal increase of unsaturated double bond in carbon chains. Aslo, thermal treatment caused the discoloration on the point of treated surface. These phenomena were attributed to the generations of ether group.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.12 no.2
• /
• pp.68-74
• /
• 2013

In this paper, an average surface roughness, $R_a$, was measured by optical measurement and its mathematical model according to spindle speed and feedrate was obtained by least square method. Also, its result is compared and investigated with real measured average surface roughness. The optical measurement of surface roughness is performed by CLSM(confocal laser scanning microscope) and the captured HEI(height encoded image) data is used as an original data for the generation of average surface roughness and its mathematical plane or contour surface of surface roughness. Using this polynomial model with two independent variables, the behavior of an average surface roughness is investigated and analyzed with an experimental modeling of least square algorithm. And it can be used for the prediction of $R_a$ in different condition of machining.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.86.1-86.1
• /
• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Tribology and Lubricants
• /
• v.35 no.1
• /
• pp.9-15
• /
• 2019

Graphene is a fascinating material for fabricating flexible and transparent devices owing to its thickness and mechanical properties. To utilize graphene as a core material for devices, the transfer process of graphene is an inevitable step. The transfer process can be classified into wet and dry methods depending on the surrounding environment. The adhesion between graphene and a target substrate determines the success or failure of the transfer process. As the surface energy of graphene is an important parameter that provides adhesion, it is useful to estimate the surface energy to understand the mechanisms of the transfer process. However, the exact surface energy of graphene is still disputed because the wetting transparency of graphene depends on the polarity of the liquid and target substrate. Previously reported results use graphene transferred by the wet method. However, there are few reports on the surface energy of graphene transferred by the dry method. In this study, the surface energy of graphene transferred by the wet and dry methods is estimated. Wetting transparency occurs for certain combinations of liquids and substrates. For graphene on a polar substrate, the surface energy decreases by 25 and 35% for the wet and dry transfer methods, respectively. However, the surface energy of graphene on dispersive substrates decreases by ~10% regardless of the transfer method. In conclusion, the surface energy of graphene is $36{\sim}38mJ/m^2$, and differs depending on the transfer method and polarity of the substrate.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.3
• /
• pp.124-129
• /
• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.9
• /
• pp.32-37
• /
• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Journal of the Korean Society for Precision Engineering
• /
• v.4 no.2
• /
• pp.36-46
• /
• 1987

An optical technique using laser for non-contact measurement of surface roughness and form accuracy of ground surfaces is presented. It is found that, when a ground surface is illuminated by a beam of laser light, the roughness height and slope distribution has significant influence on the pattern of reflection and it maintains an unique Gaussian distribution relationship with the surface roughness. The principle idea of the optical measurement system is therefore monitor the radiation, and then calibrate it in process against surface roughness by means of necessary digital data processing. On the other hand, measuring the form accuracy of a ground surface is accomplished by using a triangular method, which is based on observing the movement of an image of a spot of light projected onto the surface. The image is focused, through a series of lenses for magnification, on a photodetector array lf line configur- ation. Then the relative movement of image and consequently the form accuracy of the surface can be obtained through appropriate calibration procedures. Experimental test showed that the optical roughness measurement technique suggested in this work is very efficient for most industrial applications being capable of monitoring the roughness heights ranging 0.1 to 0.6 .$\mu$m CLA values. And form accuracy can be measured in process with a resolution of 10 .$\mu$m.