• 한국진공학회지
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• 제2권2호
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• pp.199-208
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• 1993

Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 염마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si)위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 자장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다.

• 한국표면공학회지
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• 제40권2호
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.22-30
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• 2002

Si, SiO/sup 2/, TiN, W/sup 2/N 기판 위에 (hfac)Cu(VTMS) 유기금속 전구체로 증착된 구리 핵을 조사하였다. 증착온도가 증가함에 따라, 기판 종류에 상관없이 180。C에서 구리 핵이 클러스터링으로 성장하는 메커니즘을 관찰하였다. 또한, HF용액으로 세척한 TiN 과 SiO/sup 2/가 공존하는 기판에서 구리 핵의 선택성이 향상됨을 관찰하였다. TiN을 H/sup 2/O/sup 2/로 세척한 후 Dimethyldichlorosilane 처리했을 때 표면이 passivation됨을 확인하였다.

• 한국막학회:학술대회논문집
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• 한국막학회 1998년도 추계 총회 및 학술발표회
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• pp.103-105
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• 1998

Asymmetric polymeric membranes prepared by the phase transition technique usually have either a top layer consisting of closely packed nodules or pores dispersed throughout the membrane surfaces. In this study, we present AFM image of a polysulfone membrane which show a clear evidence for the nodular structure and porous structure resulted from different phase separation mechanisms; spinodal decomposition and nucleation and growth. The surface morphology obtained by SEM and AFM was also compared.

• 한국표면공학회지
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• 제34권4호
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• pp.327-336
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• 2001

The skinpassing conditions such as roll type, roll force and roll roughness of the work roll were evaluated to give the surface properties of the galvanized steel sheets that were required for automotive and to get rid of the surface defects that caused with the bad control of galvanized coating process parameters. The surface defects of the galvanized steel sheets such as the ripple mark and the scratch were completely removed as the roll force of SPM work roll was increased and the amount of the transfer of roll surface texture to the strip was also gained a lot. The image clarity of electro discharge textured (EDT) coated steel sheets before and after painting was higher than that of the bright (BRT) and shot blasted (SBT) coated steel sheets because of higher PPI value, lower waviness and uniform surface pattern. Since micro-craters transferred on the surface of the galvanized steel sheets played a role of nucleation sites of chromate reaction, Increase of micro-craters was bring to better corrosion resistance with the increase of the roll force and the use of EDT roll at the skin pass mill.

• 한국표면공학회지
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• 제48권2호
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• 한국표면공학회지
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• 제41권6호
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• pp.301-307
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• 2008

In this paper, nanocrystallization of CuNiTiZr bulk metallic glass (BMG) subjecting to a kinetic spraying, dependent on impact velocity, was investigated by numerical and experimental approaches. The crystallization fraction and nucleation activation energy of initial feedstock and as-deposited coating were estimated by DSC and Kissinger method, respectively. The results of numerical modeling and experiment showed that the crystalline fraction and nucleation activation energy in BMG coatings were depended on kinetic energy of incident particle. Upon impact, the conversion of particle kinetic energy leads to not only decreasing free energy barrier but also increasing the driving force for an amorphous to crystalline phase transformation. The nanocrystallization of BMGs is associated with the strain energy delivered by a plastic deformation with a high strain rate.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.336-339
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• 1998

Bioactive titanium metal can be prepared by simple 5M-NaOH treatment and subsuquent heat treatment at $600^{\circ}C$ to form an amorphous sodium titanate on its surface. In the present study, mechanism of apatite formation on the titanium metal was investigated by examining its surface compositional and structural changes in a simulated body fluid. The apatite formation on the metal was found to proceed in the sequence of 1)$Na^+$ ion release from the sodium titanate to form hydrated titania abundant in Ti-OH groups, 2) early and selective binding of calcium ions with the Ti-OH groups to form a calcium titanate, and 3) late binding of phosphate ions to make apatite nucleation and growth. This indicates that Ti-OH groups do not directly induce the apatite nucleation, but via formation of a calcium titanate.

• 한국재료학회지
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• 제11권9호
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• 한국표면공학회지
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• 제43권1호
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.