• Advances in nano research
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• 제16권1호
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• pp.71-79
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• 2024

Nanotechnology is the latest technology developed by humanity, trying to use the molecular properties of materials found in nature to create devices that solve the problems plaguing humanity and their efficiency. Man is also trying to change the meaning of molecules to nano so that a body made up of these particles has all the properties of these particles. Nanotechnology is not a new field but a new approach in all areas. A new perspective in concrete technology has been created by the use of nanoparticles in recent years. Adding silica nanoparticles to concrete mixes improves its properties and increases its strength. However, different results and reported mechanisms explain the behavior of nanoparticles in the mixture; Therefore, it took much work to generalize the results and predict the behavior of nano concretes. This article is about the construction simulation technology of civil engineering based on artificial intelligence, which deals with the effect of nanoparticles on improving concrete properties. This was demonstrated by analyzing laboratory samples in various mixture configurations and observing how silica nanoparticles affected their microstructure with scanning electron microscopy (SEM). Based on SEM measurements, silica nanoparticles have a powerful effect because of their specific surface area. Their increase and decrease must be sought in interacting with the filling and nucleation mechanism and the pozzolanic activity. Each of these mechanisms dominates at different ages of hydration and affects the microstructure and mechanical properties of concrete.

• 한국초전도ㆍ저온공학회논문지
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• 제13권1호
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.157-157
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• 2017

Titanium and its alloys that have a good biocompatibility, corrosion resistance, and mechanical properties such as hardness and wear resistance are widely used in dental and orthopedic implant applications. They can directly connect to bone. However, they do not form a chemical bond with bone tissue. Plasma electrolytic oxidation (PEO) that combines the high voltage spark and electrochemical oxidation is a novel method to form ceramic coatings on light metals such as titanium and its alloys. This is an excellent reproducibility and economical, because the size and shape control of the nano-structure is relatively easy. Silicon (Si), manganese (Mn), and magnesium (Mg) has a useful to bone. Particularly, Si has been found to be essential for normal bone, cartilage growth and development. Manganese influences regulation of bone remodeling because its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. Insufficience of Mn in human body is probably contributing cause of osteoporosis. Pre-studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The objective of this work was to study nucleation and growth of bone-like apatite formation on Ti-6Al-4V in solution containing Mn, Mg, and Si ions after plasma electrolytic oxidation. Anodized alloys was prepared at 270V~300V voltages. And bone-like apatite formation was carried out in SBF solution for 1, 3, 5, and 7 days. The morphologies of PEO-treated Ti-6Al-4V alloy in containing Mn, Mg, and Si ions were examined by FE-SEM, EDS, and XRD.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.4-4
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• 2012

Proteins enable biology to be viable through molecular interactions (such as in antigen-antibody, ligand-receptor, and drug-target) with

• 한국표면공학회지
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• 제48권6호
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• pp.297-302
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• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.67-67
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• 2001

The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

• Tribology and Lubricants
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• 제13권2호
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• pp.96-104
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• 1997

This paper was focused on the wear characteristics of ion-nitrided metal and with ion-nitride processing, which is basically concerned with the effects of carbon content in workpiece and added carbon content gas atmosphere on the best wear performance. Increased carbon content in workpiece increases compound layer thickness, but decreases diffusion layer thickness. On the other hand, a small optimal amount of carbon content in gas atmosphere increase compound layer thickness as well as diffusion layer thickness and hardness. Wear tests show that the compound layer of ion-nitrided metal reduces wear rate when the applied wear load is small. However, as the load becomes large, the existence of compound layer tends to increase wear rate. Compressive residual stress at the compound layer is the largest at the compound layer, and decreases as the depth from the surface increases. It is found in the analysis that under small applied load, the critical depth where voids and cracks may be created and propagated is located at the compound layer, so that the adhesive wear is created and the existence of compound layer reduces the amount of wear. When the load becomes large, the critical depth is located below the compound layer and delamination, which may explained by surface deformation, crack nucleation and propagation, is created and the existence of compound layer increases wear rate. For the compound layer, at added carbon contents of 0 percent and 0.5 at. percent, the $\varepsilon$ monophase is predominant. But at 0.7 at. percent added carbon, the $\varepsilon$ monophase formation tends to be severely inhibited and r' and $Fe_3C$ polyphase formation becomes dominant. This increased hard $\varepsilon$ phase layer was observed to be more beneficial in reducing friction and wear.

• 한국표면공학회지
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• 제18권3호
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• pp.125-133
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• 1985

설파민산 니켈 용액으로 40~60$^{\circ}C$ 온도와 5~25 A/$dm^2$의 전류밀도 범위에서 1mm 두께까지 니켈을 전착시켰다. 1.2V 이상의 음극 과전압 크기에서 핵발생 속도의 증가에 따라 미세한 결정립 크기의 무질서 방위가 나타났고 0.63V에서 미세한 (110) 우선 방위가 나타났으며 그 사이의 크기에서는 강한(100) 우선방위가 형성되었다. (100) 우선방위는 조대한 주상정 조직을 나타냈고, 그 주상정의 폭은 전류밀도가 증가하면 감소하였다. X-ray응력 측정장치로 측정한 전착증 표면의 잔류응력 크기는 대부분 인장응력으로써 80MPa 이내였고 가끔 매우 작은 압축응력도 나타났다. 음극의 전류효율은 90% 이상이었으나 양극의 효율은 전류밀도, 온도, 특히 염화니켈의 양에 따라 50~90%의 효율을 나타냈다.

• 태양에너지
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• 제15권2호
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• pp.91-99
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• 1995

분무열분해법으로 $SnO_2$ 박막을 증착하여 반응변수들이 증착에 미치는 영향을 연구하였다. 분무용액의 농도가 0.01M인 경우 증착온도가 낮을 때에는 증착과정이 표면반응의 지배를 받으며 증착온도가 증가함에 따라 $400^{\circ}C$까지는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달에 의해, 분무압력이 높을 때는 표면반응에 의해 지배를 받는다. 분무용액의 농도가 증가함에 따라 증착속도는 증가하였으며 본 실험의 경우 Rideal-Eley 기구에 의해 증착반응이 일어났다. 기판의 온도가 증가함에 따라 증착속도는 증가하다가 $400^{\circ}C$ 이상에서는 균일한 핵생성에 의하여 증착속도는 감소하였다. 분무지속 시간에 비례하여 증착층의 두께는 증가하였으며 기판과 증착층간에는 물리적인 접착을 이루고 있다.