• 제목/요약/키워드: Surface nucleation

검색결과 334건 처리시간 0.023초

수소화 표면 개질이 나노다이아몬드 seed 입자의 분산 및 핵형성 밀도에 미치는 영향 (Effect of hydrogenation surface modification on dispersion and nucleation density of nanodiamond seed particle)

  • 최병수;전희성;엄지훈;황승구;김진곤;조현
    • 한국결정성장학회지
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    • 제29권6호
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    • pp.239-244
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    • 2019
  • 수소 분위기 열처리 및 수소 플라즈마 처리의 두 가지 수소화 표면개질을통해 나노다이아몬드 seed 입자의 분산 향상 및 평탄한 초미세 나노결정질 다이아몬드 박막증착을 위한 핵형성 밀도 향상을 확보하였다. 수소화 처리 이후 나노다이아몬드 입자 표면의 탄소-산소 및 산소-수소 결합기가 탄소-수소 결합기로 전환되는 화학적 표면개질이 진행되었고 Zeta 전위가 증가하였다. 분산도 향상에 따라 나노다이아몬드 응집체 크기가 현저하게 감소하였고 핵형성 밀도는 크게 증가하였다. 600℃, 수소분위기에서 열처리 이후 나노다이아몬드 평균 입자 크기가 3.5 ㎛에서 34.5 nm로 크게 감소하였고, seeding 된 Si 기판 표면에서 ~3.9 × 1011 nuclei/㎠의 매우 높은 핵형성 밀도를 확보하였다.

RHEED에 의한 GaN, InN 핵생성층의 열처리 효과 분석 (Characterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction)

  • 나현석
    • 열처리공학회지
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    • 제29권3호
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    • pp.124-131
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    • 2016
  • GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

전착법으로 제작한 Ni(OH)2 나노 시트의 핵 형성과 성장 거동에 미치는 헥사-메틸렌테트라민(HMT)의 영향 (Effect of Hexa-methylenetetramine (HMT) on Nucleation and Growth Behaviors of Ni(OH)2 Nanosheets Produced by Electrodeposition)

  • 김동연;손인준;최문현
    • 한국표면공학회지
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    • 제54권1호
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    • pp.37-42
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    • 2021
  • Electrodeposition is a synthetic method that allows fine control of the nucleation and growth factors of metals and is a suitable method for studying the nucleation and growth of Ni(OH)2. Hexa-methylenetetramine (HMT) helps to form Ni(OH)2 nanosheets by increasing the OH- of the nickel precursor solution and helps to improve the electrochemical properties of the electrode. In this study, the structural properties of Ni(OH)2 nanosheets according to the HMT concentration change using electrodeposition were studied. As the concentration of HMT increased, the size and thickness of the Ni(OH)2 nanosheet adsorbed on the surface increased and porosity increased. Also, the Scharifker-Hills nucleation theory model and experimental data were compared. In conclusion, the nanosheet shape of the HMT 7.5 mM sample electrodeposited with -0.85 V vs. Ag/AgCl grew most uniformly, and the best result was obtained as an electrode material for a pseudocapacitor.

Nucleation and Growth of Diamond in High Pressure

  • Choi, Jun-Youp;Park, Jong-Ku;Kang, Suk-Joong L.;Kwang, Yong-Eun
    • The Korean Journal of Ceramics
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    • 제2권4호
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    • pp.221-225
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    • 1996
  • In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

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Suppression of the surface nucleation of YBa$_2$Cu$_3$O$_7-y$ by CeO$_2$ coating of the top-seeded melt processed YBCO superconductors

  • Kim, Ho-Jin;Jun, Byung-Hyuk;Kim, Chan-Joong
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권3호
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    • pp.1-5
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    • 2003
  • The effect of CeO$_2$ coating on the surface nucleation of the top-seeded melt-growth processed YBCO superconductors was studied. It was effective that the coating of Y123 compact surfaces by CeO$_2$ powder suppressed the undesirable subsidiary YBa$_2$Cu$_3$O$_{7-y}$ (Y123) nucleation during melt processing. BaCeO$_3$ was formed in the CeO$_2$-coated layers, which might cause a CuO-excessive liquid at the partial melt stage of $Y_2$BaCuO$_{5}$(Y211) plus liquid, and thus the Y123 nucleation at the YBCO compact surfaces could be suppressed during the melt growth of Y123 grain. In addition, the CeO$_2$ refined the Y211 particles near the compact / coating interface. While the levitation forces of the top surfaces with and without CeO$_2$ coating were similar to each other, the levitation force of the interior of the CeO$_2$ coated sample was higher than that of the interior of the sample without CeO$_2$ coating, which was attributed to the suppression of subsidiary Y123 nucleation at the compact walls.s.s.

Characteristic of Ru Thin Film Deposited by ALD

  • Park, Jingyu;Jeon, Heeyoung;Kim, Hyunjung;Kim, Jinho;Jeon, Hyeongtag
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.78-78
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    • 2013
  • Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

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대향류 에틸렌/공기 비예혼합 화염의 구조 및 Soot 생성 메커니즘 해석 (Numerical Analysis for the Detailed Structure and the Soot Formation Mechanism in Counterflow Ethylene-Air Nonpremixed Flame)

  • 임효준;김후중;김용모
    • 한국자동차공학회논문집
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    • 제7권5호
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    • pp.40-54
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    • 1999
  • The flame structure and soot formation in the counterflow Ethylene-Air nonpremixed flame are numerically analyzed. The present soot reaction mechanism involves nucleation, surface growth, particle coagulation, and oxidation steps. The gas phase chemistry and the soot nucleation, surface growth reactions are coupled by assuming that the nucleation and soot mass growth has the certain relationship with the concentration of benzene and acetylene. In terms of the centerline velocity and the soot volume fraction, the predicted results are compared with the experimental data. The detailed discussion has been made for the sensitivity of model constants and the deficiencies of the present model. Numerical results indicated that the acetylene addition to the soot surface plays the dominant role in the soot mass growth for the counterflow nonpremixed flame.

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MgO-${Al_2}{O_3}$-$SiO_2$계 결정화유리의 제조 및 물성평가 (Preparation and Characterization of Glass-ceramics in MgO-${Al_2}{O_3}$-$SiO_2$ Glass)

  • 손성범;최세영
    • 한국세라믹학회지
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    • 제37권6호
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    • pp.604-611
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    • 2000
  • Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

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산화막중간층에 의한 수직자기기록층의 입자크기 미세화 (Fine Granulation of Recording Layer in Perpendicular Magnetic Recording Media Using Oxide-interlayer)

  • 김경환;공석현
    • 한국표면공학회지
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    • 제37권4호
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    • pp.196-199
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    • 2004
  • Seedlayers with low surface energy which increases the density of nucleation sites in the initial growth region of the recording layer deposited on them was studied to reduce grain size in recording layer. The seedlayer with low surface energy was so effective to attain finer grain in magnetic upper-layers. The Ni-Fe-O intermediate layer with low surface energy was found to be effective in reduction of grain size as well as magnetic cluster size of Co-Cr-Ta-Pt recording layer. Furthermore, the reduction of grain size in Co-Cr-Ta-Pt recording layer on Ni-Fe-O intermediate layer with low surface energy led to decrease the noise level in the high recording density region.