• Geomechanics and Engineering
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• v.22 no.4
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• pp.349-359
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• 2020

Quantification of the influence of the fracture of thick magmatic rock (TMR) on the behavior of its overlying strata is a prerequisite to the understanding of the deformation behavior of the earth's surface in deep mining. A three-dimensional numerical model of a special geological mining condition of overlying TMR was developed to investigate the overburden movement and fracture law, and compare the influence of the occurrence horizon of TMR. The research results show that the movement of overlying rock was greatly affected by the TMR. Before the fracture of TMR, the TMR had shielding and controlling effects on the overlying strata, the maximum vertical and horizontal displacement values of overlying strata were 0.68 m and 0.062 m. After the fracture, the vertical and horizontal displacements suddenly increased to 3.06 m and 0.105 m, with an increase of 350% and 69.4%, respectively, and the higher the occurrence of TMR, the smaller the settlement of the overlying strata, but the wider the settlement span, the smaller the corresponding deformation value of the basin edge (the more difficult the surface to crack). These results are of tremendous importance for the control of rock strata and the revealing of surface deformation mechanism under TMR mining conditions in mines.

• Journal of Powder Materials
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• v.25 no.2
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• pp.109-119
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• 2018

The objective of this study is to reveal the sintering mechanism of mixed Ti-6Al-4V powders considering the densification and the homogenization between Ti and Al/V particles. It is found that the addition of master alloy particles into Ti enhances densification by the migration of Al into the Ti matrix prior to the self-diffusion of Ti. However, as Ti particles become coarser, sintering of the powders appears to be retarded due to slower inter-diffusion of the particles due to the reduced surface energies of Ti. Such phenomena are confirmed by a series of dilatometry tests and microstructural analyses in respect to the sintering temperature. Furthermore, the results are also consistent with the predicted activation energies for sintering. The energies are found to have decreased from 299.35 to $135.48kJ{\cdot}mol^{-1}$ by adding the Al/V particles because the activation energy for the diffusion of Al in ${\alpha}-Ti$ ($77kJ{\cdot}mol^{-1}$) is much lower than that of the self-diffusion of ${\alpha}-Ti$. The coarser Ti powders increase the energies from 135.48 to $181.16kJ{\cdot}mol^{-1}$ because the specific surface areas of Ti decrease.

• Journal of Periodontal and Implant Science
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• v.24 no.1
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• pp.109-119
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• 1994

An essential fact in the regeneration of new periodontal tissue after periodontal therapy is the reattachment of collagen fibers to the tooth. Two phenomena play a fundamental role in preventing new connective tissue attachment to the exposed root surface ; 1) The apical migration of the junctional epithelium 2) The contamination of cementum by toxic substances, especially endotoxins. Authors have used rat submucosal implantation of root sections to study the connective tissue healing to periodontally diseaed root, previously planed and demineralized with citric acid and tetracycline- HCl. The results were obtained as follows. 1. The connective tissue attachment was increased in tetracycline, citric acid, non disease, scaling and root planing order and inflammatory reaction was seen in the rat teeth, no treatment group. 2. Collagen fiber attachment at the dentin surface was more increased than cementum surface 3. In 2 week of citric acid and tetracycline-HCl specimens, osteoid was seen near the fibrotic band. 4. In the MT view, collagen fiber formation was increased with time and the numerous collagen fiber and connective tissue was more densly attached to the tooth surfaces in the tetracycline-HCl group than the citric acid group.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.276-281
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• 2006

In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.463-466
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• 2010

We studied the initial reaction mechanism of Zn precursors, namely, di-methylzinc ($Zn(CH_3)_2$, DMZ) and diethylzinc ($Zn(C_2H_5)_2$, DEZ), for zinc oxide thin-film growth on a Si (001) surface using density functional theory. We calculated the migration and reaction energy barriers for DMZ and DEZ on a fully hydroxylized Si (001) surface. The Zn atom of DMZ or DEZ was adsorbed on an O atom of a hydroxyl (-OH) due to the lone pair electrons of the O atom on the Si (001) surface. The adsorbed DMZ or DEZ migrated to all available surface sites, and rotated on the O atom with low energy barriers in the range of 0.00-0.13 eV. We considered the DMZ or DEZ reaction at all available surface sites. The rotated and migrated DMZs reacted with the nearest -OH to produce a uni-methylzinc ($-ZnCH_3$, UMZ) group and methane ($CH_4$) with energy barriers in the range of 0.53-0.78 eV. In the case of the DEZs, smaller energy barriers in the range of 0.21-0.35 eV were needed for its reaction to produce a uni-ethylzinc ($-ZnC_2H_5$, UEZ) group and ethane ($C_2H_6$). Therefore, DEZ is preferred to DMZ due to its lower energy barrier for the surface reaction.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.137-141
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• 2009

Density functional theory was utilized to investigate the growth of an indium nanowire on a Si (001) buckled surface. A site between the edge of two Si dimers is most favorable when the first In atom is adsorbed on the surface at an adsorption energy level of 2.26 eV. The energy barriers for migration from other sites to the most favorable site are low. When the second In atom is adsorbed next to the first In atom to form an In dimer perpendicular to the Si dimer row, the adsorption energy is the highest among all adsorption sites. The third In atom prefers either of the sites next to the In dimer along the In dimer direction. The fourth In atom exhibited the same tendency showed by the second atom. The second and fourth In adsorption energy levels are higher than the first and third levels as the In atoms consume the third valence electron by forming In dimers. Therefore, the In nanowire grows perpendicular to the Si dimer row on the Si (001) surface, as it satisfies the bonding of the three valence electrons of the In atoms.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1741-1746
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• 2010

This study is on development of UV-cured anti-stain coating compounds which have more improved anti-stain function to prevent a surface of PVC tile from stain. To make an anti-stain coating composition, water soluble antistatic agent made from ammonium(IV) salt, antistatic agents for acrylic and polyurethane were used. Their contents varied from 5 to 20wt% against quantities of resin in coating composition. After coating PVC tiles using bar-coating method that can adjust a thickness, we estimated surface properties of coated layer such as anti-stain, electric resistance, adhesive power, thickness of coating, and so on. Results showed that a coating composition added 15wt% of water soluble antistatic agent and coated with No.12 bar-coater had the optimum surface property in electric resistance($3.24{\times}10^9{\Omega}/cm^2$), anti-stain(ink Test, Dust Test) and adhesive power. We could also find electric resistance and anti-stain effect were improved as antistatic agent content increased. However, excessive addition of antistatic agents(over 20wt%) caused the migration.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.