• Title/Summary/Keyword: Surface leakage

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Mechanical Properties of EPDM Gasket after Long-Term Operations (EPDM 가스켓의 장시간 운전에 따른 기계적 성능변화)

  • Wu, Lan;Kim, Seon-Hak;Cheon, Seung-Ho;Kim, Jin-Su;Hyun, Deok-Su;Kim, Byeong-Heon;Lee, Sung-Kun;Jeong, Jae-Hoon;Ji, Duk-Jin;Oh, Byeong-Soo
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.4
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    • pp.488-494
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    • 2011
  • Gasket plays an important role on sealing of the polymer electrolyte membrane fuel cell (PEMFC) stack. Stack requires gaskets in each cell to keep the hydrogen and air/oxygen within their respective regions. The failure of the gasket creates the problems of fuel leakage, mixing, damage on parts and can be a direct reason for the degrading the efficiency of fuel cell. The purpose of this paper researches on how mechanical properties of EPDM gasket in PEMFC are changed after long-term operations. The EPDM (ethylenepropylene-diene monomer) gaskets are obtained from the stack after long-term operations. DMA (dynamic mechanical analysis) is conducted to access the change of mechanical properties of the EPDM gasket. SEM/EDS (scanning electron microscope/energy dispersive spectroscopy) was used to show the surface topography and chemical characterization on the sample surface.

Ultrahigh Vacuum Technologies Developed for a Large Aluminum Accelerator Vacuum System

  • Hsiung, G.Y.;Chang, C.C.;Yang, Y.C.;Chang, C.H.;Hsueh, H.P.;Hsu, S.N.;Chen, J.R.
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.309-316
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    • 2014
  • A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

Evaluation of Flexible Complementary Inverters Based on Pentacene and IGZO Thin Film Transistors

  • Kim, D.I.;Hwang, B.U.;Jeon, H.S.;Bae, B.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.154-154
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    • 2012
  • Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

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Hybrid complementary circuits based on organic/inorganic flexible thin film transistors with PVP/Al2O3 gate dielectrics

  • Kim, D.I.;Seol, Y.G.;Lee, N.E.;Woo, C.H.;Ahn, C.H.;Ch, H.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.479-479
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    • 2011
  • Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

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Properties of TiO2 Thin Films Deposited on PET Substrate for High Energy Density Capacitor (고에너지밀도 캐패시터를 위해 PET 기판에 증착한 TiO2 박막의 특성)

  • Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.22 no.8
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    • pp.409-415
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    • 2012
  • $TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

Study on Dangerous Factors and Damage Pattern Analysis of Leaking Water from Water Purifiers (누수가 발생한 정수기의 위험요소 발굴 및 소손패턴 해석에 관한 연구)

  • Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.27 no.3
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    • pp.57-62
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    • 2012
  • The purpose of this paper is to find dangerous factors of a water purifier when water leaks due to inappropriate use and analyze the patterns of damaged parts in order to provide data for the examination of the cause of the problem. If the water purifier is inspected and managed by a non-specialist, when the FLC(Float Level Controller) at the top is inclined, water leakage may occur to the water purifier. The leaked water flows onto the cables and hoses and enters the thermostat terminal, heater, PCB, power supply connection connector, etc., becoming a dangerous factor that may cause a system failure, fire, etc. Due to the water that entered the input terminal, low noise and white smoke were generated at first. However, the flame gradually propagated due to the continuous inflow of moisture. It was found that when moisture reached the PCB, a carbonized conductive path was formed at the varistor terminal, input terminal, semiconductor device terminal, etc., and the flame became larger, which might result in a fire. From the metal microscope analysis of a damaged condenser terminal, it was found that the amorphous structure unique to copper cable disappeared, and voids, boundary surface and disorderly fine particles occurred. Also, in the case of the connector into which moisture penetrated, fusion and deformation occurred at the cable connection clips. The result of analysis of the power supply cable connector using a thermal image camera showed that most of the heat was generated from the cable connection clips and the temperature at the connection center was normal.

A Study of Self-Sealing Rubber Material Using Foamed Natural Rubber (NR 발포를 사용한 자기 밀폐형 고무 재료의 연구)

  • Kim, Do-Hyun;Kim, Hyun-Mook;Lee, Chang-Seop;Ahn, Won-Sool;Kim, Joon-Hyung
    • Elastomers and Composites
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    • v.41 no.2
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    • pp.88-96
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    • 2006
  • The self-sealing rubber material for a fuel cell which has self-sealing ability, in case of fuel leakage, was studied. Cure characteristics, density, swelling, and surface morphology of foamed natural rubber were investigated with carbon black and with processing oil within the range of $10{\sim}30phr$. The rheological properties indicated that the value of $ts_2$ and the value of $Tc_{90}$ were increased with increasing a content of processing oil, while carbon black did not show a similar trend. A difference in density by foaming was decreased to one fifth scale compared to the initial value. According to the swelling test of foamed natural rubber in fuel C, isooctane and toluene, all the self-sealing action was finished in two minutes. From the SEM image for the surface of rubber compounding, a foaming by sodium bicarbonate was found to be unequal and consecutive foaming cell.

A Summary of Radiation Accidents in Atomic Energy Activities of Korea (우리나라의 원자력 연구 개발에 수반된 방사선 사고)

  • 이현덕;하정우
    • Nuclear Engineering and Technology
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    • v.2 no.2
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    • pp.97-106
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    • 1970
  • Radiation accidents which occured in the A.E.R.I. during last ten years are described (table 1). It seemed to the authors that some of these accidents were considered to be hazardous to man body and associated installations. This report deals with the following four major accidents involving body contamination incidents that our health physicists have been experienced. 1. Over-exposures (up to 130 rem) to the total body due to the mismanipulation in the Cobalt-60 gamma irradiation facility. 2. Floor surface contamination (up to 13 mrad/hr) and its spread out due to the mishandling of radioiodine contained in the bottle. 3. Body surface contamination and 0.36 uCi radioactivity accumulated in the thyroid gland of a worker due to the inhalation of gaseous iodine-131. 4. A void capsule due to the leakage out of the radium therapeutic source (3mg\ulcorner) These accidents were treated by definitely prompt action to protect the workers and associated installations from any radiation hazards and every possible efforts were made to confine the spread of radioactive contamination as small area as possible by means of elaborate decontamination work and monitoring.

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Application of Geophysical Exploration Methods to Seepage Bone Investigation of Dam Structures (제방누수조사에의 물리탐사기법의 활용(쌍극자배열 전기비저항탐사와 SP탐사를 중심으로))

  • Won Jong-Geun;Song Sung-Ho
    • 한국지구물리탐사학회:학술대회논문집
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    • 1999.08a
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    • pp.240-257
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    • 1999
  • More than 16 percent of the total 18,032 reservoirs over the country were reported to have leakage problems and need to be improved. Recently, a great deal of progress was made in geophysical survey techniques, particularly in electrical resistivity, and the techniques are used for variety of Purposes in groundwater and dam management due to its economical advantages. This document describes the re-evaluation of existing resistivity data including newly surveyed data, mapping of modeled value in 2-D analysis to locate seepage pathways, This contains also discussion results of more than eighteen years of professional experiences in the field of dam efficiency improvement. In comparison of surface resistivity data with several soil analysis data in laboratory, it is evident that the surface resistivity value shows a qualitative proportionality with the sand contents of the filling materials in earth dam. The result from the study also indicates that the SP method in subsurface investigation is effective to detect seepage in earth filled dam as well as piping through rock/earthfill dike.

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A Risk Assessment in According to Spot Measures and Analysis in Dust Generation Area (분진발생지역의 현장실측과 분석을 통한 위험성 평가)

  • Shong, Kil-Mok;Kim, Young-Seok;Kim, Chong-Min
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.9
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    • pp.103-110
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    • 2008
  • In terms of electrical safety, environmental impact assessment and revision of domestic regulation are needed for the electric facilities. In this paper, risk of electric facilities is assessed by the spot measures and analysis in dust generation area. Adhesion dust in a surface of insulated materials cause electrical accidents. In a mechanism of these accidents, when the dust lie on electric facilities, a leakage current is flowed and the surface of insulated material is carbonized. Hereafter, electrical fire is generated due to Joule's heat. As the results, dusts are found in protection devices or panel board and sampled dusts vary in sampled amounts and conductivity severally. For the most part, sodium is detected but zinc and calcium are detected in case of reclaimed rubber factory by the ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectroscopy). In a sewerage, the ingredients such as sodium, magnesium, iron, calcium, aluminium, etc are detected uniformly. So that, results of the spot measures and analysis of dusts are become the important data for the assessment of electrical hazard in dust generation area.