• Title/Summary/Keyword: Surface leakage

Search Result 776, Processing Time 0.029 seconds

Fabrications and properties of MFIS structure using AIN buffer layer (AIN 버퍼층을 사용한 MFIS 구조의 제작 및 특성)

  • 정순원;김용성;이남열;김진규;정상현;김광호;유병곤;이원재;유인규
    • Proceedings of the IEEK Conference
    • /
    • 2000.11b
    • /
    • pp.29-32
    • /
    • 2000
  • Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

  • PDF

Formations and properties of MFIS structure using $LiNbO_3/Si_3N_4$ structure ($LiNbO_3/Si_3N_4$ 구조를 이용한 MFIS 구조의 형성 및 특성)

  • 김용성;정상현;정순원;이남열;김진규;김광호;유병곤;이원재;유인규
    • Proceedings of the IEEK Conference
    • /
    • 2000.11b
    • /
    • pp.221-224
    • /
    • 2000
  • We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

  • PDF

Interface properties of $Al_{2}O_{3}$ thin film using ALD method on metal film and Fabrication of MIM capacitor (금속 박막위에 ALD법으로 형성된 $Al_{2}O_{3}$ 박막의 계면 특성과 MIM capacitor의 제조)

  • 남상완;고성용;정영철;이용현
    • Proceedings of the IEEK Conference
    • /
    • 2003.07b
    • /
    • pp.1061-1064
    • /
    • 2003
  • In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

  • PDF

Excimer Laser-Assisted In Situ Phosphorus Doped $Si_{(1-x)}Ge_x$ Epilayer Activation

  • Bae, Ji-Cheul;Lee, Young-Jae
    • ETRI Journal
    • /
    • v.25 no.4
    • /
    • pp.247-252
    • /
    • 2003
  • This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

  • PDF

Mechanical Seal의 이상설계 감시에 관한 연구

  • 임순재;최만용;남궁석
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 1992.10a
    • /
    • pp.166-171
    • /
    • 1992
  • Mechanical seals are generally used in the fields of industries as sealing devices. The failure of mechanical seals like crack, leakage, breakage fast and severe wear, excessive torque, and squeaking result in big problems. For the development of monitoring system, this study was carried out to identify abnormal phenomina on alumina(AI $\_$2/ O /sub3/) seal ring and resin bonded carbon ring, and to propose the proper parameter for monitoring failure on mechanical seals. Sliding were tests are conducted at 12 experimental conditions that contains 3 different contact pressure and 4 surface conditions. Torque, temperature, and acoustic emission are measured. Optical microstructure and scanning electron microscopy are observed for the wear processing every 10 minute sliding at rotation speed of 1750 RPM.

A Study on Mold Machining for Bearing Rubber Seal by Formed Tool. (총형공구를 이용한 고정밀 베어링 Rubber seal 금형가공에 관한 연구)

  • 김도형;김연술;이희관;노상흡;양균의
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2003.06a
    • /
    • pp.1807-1810
    • /
    • 2003
  • The formed tool is used to machine the unique shape of rubber seal for geometrical shaping and reduction of cutting time. The bearing rubber seal produced by hot press forming has complex geometry for the complex geometrical shape to prevent leakage of lubricant oil and influx of the dust effectively. Because it is difficult to machine the unique shape exactly by the conventional tool, the formed tool is used in machining mold of the seal. In this paper, It is performed for selection of the formed tool to investigate cutting edge wear, cutting force, and surface quality. Also, an efficient high precision machining is proposed on the experiment data.

  • PDF

A Study on the reliability analysis of Forest Fire on Polymer Insulators (폴리머 애자의 산불 신뢰성 평가 연구)

  • Lee, Won-Kyo;Choi, In-Hyuk;Hwang, Kab-Cheol;Choi, Han-Yeol
    • Proceedings of the KIEE Conference
    • /
    • 2008.07a
    • /
    • pp.460-461
    • /
    • 2008
  • The forest fire simulation tests were performed with polymer and porcelain insulators at Gochang testing center. These tests consisted of energizing 90 kV at line-to-ground voltage of 154 kV lines and open flame rising up to $600-630^{\circ}C$ as being measured at insulator surface. Mechanical and electrical characteristics such as specific mechanical load, leakage current, low frequency dry flashover voltage and impulse flashover voltage were analyzed for the polymer insulators before, during and after simulation tests compared with porcelain insulators. At the end of fire simulation tests, there was no detrimental deterioration of any insulators. All insulators passed the criteria of KEPCO specification. This study showed that forest fire simulation had no impact on polymer insulators.

  • PDF

A SCANNING ELECTRON MICROSCOPIC STUDY OF PREVENTIVE RESIN RESTORATION (우식예방을 위한 레진 충전물의 주사전자현미경적 연구)

  • Kim, Hye-Sook
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.11 no.1
    • /
    • pp.57-74
    • /
    • 1984
  • The purpose of this descriptive in vitro study were to evaluate the enamel-resin interface of the preventive resin restoration with regard to etching patterns and resin-tag morphology by means of scanning electron microscope. The results were as follows; 1. Three basic etching patterns were appeared simultaneously in a same microscopic section, in concentration between 20-50% phosphoric acid. 2. In 35% orthorhosphoric acid group etched for 60 second, the etching pattern was most prominent and demonstrate closely interdigitated with enamel-resin interface without the evidence of microspace, and the resin tags were longest ranged from 10-15 um in length. 3. This pattern of interface could reduce the incidence of marginal leakage and 2ndary caries formation. 4, The preventive resin restoration could serve as sealing a questionable occlusal surface.

  • PDF

Numerical Study of the Flow in a Transonic Centrifugal Compressor (천음속 원심압축기 내부 유동의 수치해석)

  • Seong, Seon-Mo;Kang, Shin-Hyoung
    • 한국전산유체공학회:학술대회논문집
    • /
    • 2008.03b
    • /
    • pp.228-231
    • /
    • 2008
  • Flow fields of a transonic centrifugal compressor are calculated using the commercial CFD code, CFX-TASCflow. Due to the transonic inlet condition, interactions between the shock wave and boundary layers and between the shock wave and tip leakage vortices generate complex flow structures and extra losses. The calculated results show that strong secondary flows due to high curvature and high rotational speed of the impeller. And streamlines near suction surface show that strong radially upward flow develops after the shock between the leading edge locations of main blade and splitter.

  • PDF

Fracture Mechanics Analysis of the Steam Generator Tube after Shot Peeing (숏피닝 증기 발생기 전열관의 파괴역학적 해석)

  • Shin, Kyu-In;Park, Jai-Hak;Jhung, Myung-Jo;Choi, Young-Hwan
    • Proceedings of the KSME Conference
    • /
    • 2003.11a
    • /
    • pp.1180-1185
    • /
    • 2003
  • One of the main degradation of steam generator tubes is stress corrosion cracking induced by residual stress. The resulting damages can cause tube bursting or leakage of the primary water which contained radioactivity. Primary water stress corrosion crack occurs at the location of tube/tubesheet hard rolled transition zone. In order to investigate the effect of shot peening on stress corrosion cracking, stress intensity factors are calculated for the crack which is located in the induced residual stress field.

  • PDF