• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Journal of Ocean Engineering and Technology
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• v.8 no.1
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• pp.50-61
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• 1994

A 300 meter class ROV(CROV300) is composed of three parts : a surface unit, a tether cable and an underwater vehicle. The vehicle controller is based on two processors : an Intel 8097-16-bit one chip micro-processor and a Texas Instruments TMS320E25 digital signal processor. In this paper, the surface controller, the vehicle controller and peripheral devices interfaced with the processors are described. These controllers transmit/receive measured status data and control commands through RS422 serial communication. Depth, heading, trimming, camera tilting, and leakage signals are acquired through the embedded AD converters of the 8097. On the other hand, altitude of ROV and lbstacle avoidance signals are processed by the DSP processor and periodically fetched by the 8097. The processor is interfaced with a 4-channel 12-bit D/A converter to generate control signals for DC motors an dseveral transistors to handle the relays for on/off switching of external devices.

• Selected Papers of The Society of Naval Architects of Korea
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• v.2 no.1
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• pp.140-155
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• 1994

The hydrodynamic problem is treated here when a pressurized bag is submerged partially in the water and the end points of it oscillate. SES(Surface Effect Ship) has a bag filled with pressurized air at the stern in order to prevent the air leakage, and the pitch motion of SES is largely affected by the hydrodynamic force of the bag. The shape of a bag can be determined with the pressure difference between inside and outside. Once the hydrodynamic pressure is given, the shape of a bag can be obtained, however in order to calculate the hydrodynamic pressure we should know the shape change of the bag, and vice versa. Therefore the type of boundary condition on the surface of a bag is a moving boundary like a free surface boundary. The present paper describes the formulation of this problem and treats a linearized problem. The computations of the radiation problem for an oscillating bag are shown in comparison with the case that the bag is treated as a rigid body. The hydrodynamic forces are calculated for various values of the pressure inside the bag and the submerged depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1673-1675
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• 1996

We have studied the effect of surface tension and flow rate of contaminants, wettability, frequency of applied voltage dependence of tracking breakdown. As the flow rate of contaminant is increasd, the surface resistivity is decreased, and the leakage current is increased, the time to tracking breakdown is decreased. It is found that time to tracking breakdown depends on the frequency of contaminant, that is difference of wettability. And as the frequency of applied voltage is increased, time to tracking breakdown decreased.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1642-1644
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• 1996

Passivation must prevent ionic charge movement on the surface of the junction, thereby minimizing the junction leakage and maximizing the breakdown voltage of the devices. Borosilicate glasses are widely used as surface passivants for such silicon power devices as thyristors, transistor, and diodes. Since these 91asses are electrically stable at high temperatures and in high electric fields, they can readily be applied as a thick film, and they are resistant to humidity and have low ionic mobility. A deposition technique of glass film on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. The purpose of this paper is to describe electrophoretic deposition method for glass passivation and characteristics of glass films which were compared using DTA, SEM, XRD, as a function of firing temperature.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.57-62
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• 1997

Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.98-99
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• 2014

질산산화법(nitric acid oxidation method)은 저온에서 안정적인 산화막을 형성하는 직접산화공정으로 azeotropic point(68 wt%)인 120도 이하의 온도에서 산화막을 형성한다. 120도에서 형성한 질산산화막은 CVD법으로 형성한 산화막 보다 낮은 누설전류밀도(leakage current density)를 나타낸다. 또한 질산의 농도가 증가함에 따라 형성한 산화막의 누설전류밀도가 감소하며, 이는 열산화법으로 형성한 산화막 보다 낮다. 질산산화의 낮은 누설전류밀도는 형성한 산화막의 높은 원자 밀도와 낮은 계면준위밀도에 의한 것으로 이 특성을 이용하여 게이트 절연막(gate insulator)과 태양전지의 passivation막으로 응용되고 있다.