• 한국표면공학회지
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• 제39권3호
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• pp.115-120
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• 2006

The codeposition behavior of WC particles from an additive-free nickel sulfate and sulfamate solution has been investigated. Electroplating of Ni/WC composites was carried out at different current density with variation of WC particle size. The Guglielmi adsorption mechanism is applied to the electroplating of the fine WC in Ni matrix. The contents of WC in Ni composite coating were increased both by increasing current density and WC concentration in the bath. The hardness of Ni/WC composite coating at low current density is higher than that at high current density since finer WC particles dispersed through the coating. The codeposition behaviors of Co coated WC particles were also investigated. Conducting layer of particles promoted the codeposition behavior of Ni/WC-Co composite coatings.

• 한국표면공학회지
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• 제35권1호
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• pp.53-63
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• 2002

Ni coating was carried out by pulse plating at room temperature. So, experimental conditions for Ni-coating were based on Watt's bath, and new additives(propionic acid) were introduced in the Watt's bath electrolyte as $H_3$$BO_3$ alternatives. By adding propionic acid, coating layer demonstrated a good adhesion and uniformity without special pre-treatment of the 316L stainless steel at room temperature. With a decrease of amount of propionic acid and applied average current density, cathode current efficiency increased. Also, edge effect was decreased with decreasing a peak current and increasing a pulse frequency in the same bath condition. It was found that the optimum condition for Ni coating was a current density of 10~20mA/$\textrm{cm}^2$ at below 500 mA peak current in the $5m\ell/\ell$ propionic acid solution.

• 한국재료학회지
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• 제27권11호
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• pp.617-623
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• 2017

Mesoporous carbon nanofibers as electrode material for electrical double-layer capacitors(EDLCs) are fabricated using the electrospinning method and carbonization. Their morphologies, structures, chemical bonding states, porous structure, and electrochemical performance are investigated. The optimized mesoporous carbon nanofiber has a high sepecific surface area of $667m^2\;g^{-1}$, high average pore size of 6.3 nm, and high mesopore volume fraction of 80 %, as well as a unifom network structure consiting of a 1-D nanofiber stucture. The optimized mesoporous carbon nanofiber shows outstanding electrochemical performance with high specific capacitance of $87F\;g^{-1}$ at a current density of $0.1A\;g^{-1}$, high-rate performance ($72F\;g^{-1}$ at a current density of $20.0A\;g^{-1}$), and good cycling stability ($92F\;g^{-1}$ after 100 cycles). The improvement of the electrochemical performance via the combined effects of high specific surface area are due to the high mesopore volume fraction of the carbon nanofibers.

• 한국표면공학회지
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• 제47권3호
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• pp.104-108
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• 2014

To improve emission efficiency of organic light emitting devices (OLEDs), we fabricated the tandem OLED of ITO / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al / $MoO_x$ (X nm) / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al structure. And emission properties of single OLED and tandem OLED with $MoO_x$ thickness as charge generation layer (CGL) were measured. The current emission efficiency and quantum efficiency of tandem OLED with $MoO_x$ of 3 nm thickness were improved compare with single OLED from 7.46 cd/A and 5.39% to 22.57 cd/A and 11.76%, respectively. In case of thicker or thinner than $MoO_x$ of 3~5 nm, the current emission efficiency and quantum efficiency were decreased, because balance of electron and hole in emission layer was not matching. The driving voltage was increased from 8 V of single OLED to 15 V of tandem OLED by thickness increase of OLED. As a result, it was possible to improve the emission efficiency of OLEDs by optimized $MoO_x$ thickness.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• 한국해양공학회지
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• 제20권5호
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• pp.23-29
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• 2006

A quasi depth-varying mathematical model for wind-generated circulation in coastal areas, expressed in terms of the depth-averaged horizontal velocity components and free surface elevation was validated and used to understand the diurnal circulation process. The wind velocity is considered as a dominant factor for driving the current. In this paper, three-dimensional numerical experiments that included the land topography were used to investigate the mesoscale air flaw over the coastal regions. The surface temperature of the inland area was determined through a surface heat budget consideration with the inclusion of a layer of vegetation.A series of numerical experiments were then carried out to investigate the diurnal response of the air flaw and wind-generated circulation to various types of surface inhomogeneities.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.152-152
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• 2016

Anodizing is a technology to generate thicker and high-quality films than natural oxide films by treating metals via electrochemical methods. It is a technique to develop metals for various uses, and extensive research on the commercial use has been performed for a long time. Aluminum anodic oxide (AAO) is generate oxide films, whose sizes and characteristics depending on the types of electrolytes, voltages, temperatures and time. Electrochemical manufacturing method of nano structure is an efficient technology in terms of cost reduction, high productivity and complicated shapes, which receives the spotlight in diverse areas. The sulfuric acid was used as an anodizing electrolyte, controlling its temperature to $10^{\circ}C$. The anode was 5083 Al alloy with dimension of $5(t){\times}20{\times}20mm$ while the cathode was the platinum. The distance between the anode and the cathode was maintained at 3 cm. Agitation was introduced by magnetic stirrer at 300 rpm to prevent localized temperature rise that hinders stable growth of oxide layer. In order to observe surface characteristics with applied current density, the electrolyte temperature, concentration was maintained at constant condition for $10^{\circ}C$, 10 vol.%, respectively. To prevent hindrance of stable growth of oxide layer due to local temperature increase during the experiment, stirring was maintained at constant rate. In addition, using galvanostatic method, it was maintained at current density of $10{\sim}30mA/cm^2$ for 40 minutes. The cavitation experiment was carried out with an ultrasonic vibratory apparatus using piezo-electric effect with modified ASTM-G32. The peak-to-peak amplitude was $30{\mu}m$ and the distance between the horn tip and specimen was 1 mm. The specimen after the experiment was cleaned in an ultrasonic, dried in a vacuum oven for more than 24 hours, and weighed with an electric balance. The surface damage morphology was observed with 3D analysis microscope. As a result of the investigation, differences were observed surface hardness and anti-cavitation characteristics depending on the development of oxide film with applied current density.

• 한국표면공학회지
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• 제37권5호
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• pp.249-252
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• 2004

Effects of HA and TiN coating on the electrochemical characteristics of Ti-6AI-4V alloys for bone plates were investigated using various test methods. Ti-6AI-4V alloys were fabricated by using a vacuum induction furnace and bone plates were made by laser cutting and polishing. HA was made of extracted tooth sintered and then tooth ash was used as HA coating target. The TiN and HA film coating on the surface were carried on using electron-beam physical vapor deposition (EB-PVD) method. The corrosion behaviors of the samples were examined through potentiodynamic method in 0.9% NaCI solutions at $36.5\pm$$1^{\circ}C$ and corrosion surface was observed using SEM and XPS. The surface roughness of TiN coated bone plates was lower than that of tooth ash coated plates. The structure of TiN coated layer showed the columnar structure and tooth ash coated layer showed equiaxed and anisotrophic structure. The corrosion potential of the TiN coated specimen is comparatively high. The active current density of TiN and tooth ash coated alloy showed the range of about $1.0xl0^{-5}$ $A\textrm{cm}^2$, whereas that of the non-coated alloy was$ 1.0xl0^{-4}$ $A\textrm{cm}^2$. The active current densities of HA and TiN coated bone plates were smaller than that of non-coated bone plates in 0.9% NaCl solution. The pitting potential of TiN and HA coated alloy is more drastically increased than that of the non-coated alloy. The pit number and pit size of TiN and HA coated alloy decreased in compared with those of non-coated alloy. For the coated samples, corrosion resistance increased in the order of TiN coated, tooth ash coated, and non-coated alloy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.