• Title/Summary/Keyword: Surface diffusion

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A Kinetic Study of the Aluminum Electrode in Molten 60 Mole Percent $AlCl_3$-40 Mole Percent NaCl at 453${\circ}K$ (용융 (60 몰% $AlCl_3$-40 몰% NaCl) 염 속에서의 알루미늄전극의 반응속도론적 연구)

  • G. F. Uhlig;T. N. Andersen;S. Johns;H. Eyring
    • Journal of the Korean Chemical Society
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    • v.18 no.6
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    • pp.400-407
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    • 1974
  • Steady-state anodic and cathodic polarization curves were developed for the Al electrode in 60 mole %$AlCl_3$-40 mole % NaCl at $180^{\circ}C$$453^{\circ}K$). Ohmic resistance contributed substantially to the anodic polarization at current densities greater than 50 mA/$CM^2$ even with capillary tip placed close to the electrode. This could not be rationalized from the resistivity of the melt, which would lead to a much smaller polarization. It was therefore concluded that a layer of high resistance $AlCl_3$ (or $AlCl_3$-rich melt) formed close to the anode surface. From the IR-corrected anodic Tafel and Allen-Hickling plots an apparent anodic charge-transfer coefficient of ${\alpha}_a$ = (2.3 RT/F)(d log i/d${\eta}$) = $1.5{\pm}0.25$ was obtained. At cathodic current densities greater than approximately 30 mA/$cm^2$, slow ion diffusion and dendrite growth both interfered with the measurement of kinetic parameters.

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Controlled Growth of Large-area Mono-, Bi-, and Few-layer Graphene by Chemical Vapor Deposition on Copper Substrate

  • Kim, Yooseok;Lee, Su-il;Jung, Dae Sung;Cha, Myoung-Jun;Kim, Ji Sun;Park, Seung-Ho;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.380.2-380.2
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    • 2014
  • Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

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Preparation and Electrical Properties of $(Ba_{1-x},\;Sr_x)TiO_3$ Thin Film by Metal-Organic Chemical Vapor Deposition (유기 금속 화학 증착법에 의한 $(Ba_{1-x},\;Sr_x)TiO_3$ 박막의 제조 및 전기적 특성)

  • Yun, Jong-Guk;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.816-819
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    • 1995
  • (Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

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Characteristics of Stainless Steel Composites with Nano-sized TiCxNy (Nano-sized TiCxNy를 함유한 STS 복합체의 특성)

  • Ban, Tae-Ho;Park, Sung-Bum;Jo, Soo-Jeong;Lee, Dong-Won;Turaev, Farkhod R.;Park, Yong-Il;Kim, Sung-Jin
    • Journal of Powder Materials
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    • v.18 no.3
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    • pp.290-296
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    • 2011
  • Titanium carbonitride is more perspective materials compared to titanium carbide. It can be used in tool industry and special products because of its higher strength, abrasive wear-resistance and especially its strong chemical stability at high temperatures. We produced STS+TiCxNy composite by the spark plasma sintering for higher strength and studied the characteristics. The planar and cross-sectional microstructures of the specimens were observed by scanning electron microscopy. Characterizations of the carbon and nitride phases on the surface of composite were carried out using an X-ray diffractometer. During annealing TiCxNy particles diffusion into STS 430 was observed. After annealing, sintering isolations between particles were formed. It causes decreasing of mechanical strength. In addition when annealing temperature was increased hardness increased. Heterogeneous distribution of alloying elements particles was observed. After annealing composites, highest value of hardness was 738.1 MHV.

Redox Properties of Modified Poly-N,N'-bis(2-pyrrol-1-yl-propyl)-4,4'-Bipyridine Film Electrode (수식된 N,N'-bis(2-pyrrol-1-yl-propyl)-4,4'-bipyridine 고분자 피막전극의 산화-환원 특성)

  • Cha, Seong Keuck
    • Journal of the Korean Chemical Society
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    • v.45 no.5
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    • pp.429-435
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    • 2001
  • The monomer N,N'-bis(2-pyrrol-1-yl-propyl)-4,4'-bipyridine(bpb) was electrochemically polymerized on the glassy carbon electrode surface, which was modified with 1:1 ratio of erichrome black T(EBT) and glutathione(GSSG) to give a type of GC/poly-bpb, EBT, GSSG electrode for depositing Zn(II). The diffusion coefficients of the incorporated ions were 2.43${\times}10^{-15}$ and 9.14${\times}10^{-15} cm^2s^{-1}$ before taking Zn(II) ions and after them respectively. The modified electrodes are stable at the electrode process. The polymerized poly-bpb of 2.83${\times}10^4gmol^{-1}$ can deposit 2.15${\times}10^4gmol^{-1}$ of Zn(II). The number of pumping ions involving in the redox procedure at 0.77 V was 81.7% of the captured 180 ions into the polymer matrix, which was 3 times larger than that of the electrode modified with EBT alone.

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Antimicrobial Resistance and Minimum Inhibitory Concentrations of Vibrio parahaemolyticus Strains Isolated from Seawater and Commercial Fisheries (해수 및 시판 수산물에서 분리한 장염비브리오균(Vibrio parahaemolyticus)의 항균제 내성 및 최소발육억제농도의 규명)

  • Cho, Eui-Dong;Kim, Hee-Dai;Park, Kwon-Sam
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.52 no.6
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    • pp.587-595
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    • 2019
  • Eighty-three Vibrio parahaemolyticus isolates from surface seawater in Gomso Bay on the west coast of Korea, and commercial fisheries from Gunsan fisheries center were analyzed for the presence of virulence genes and susceptibility to 30 different antimicrobials. All 83 isolates were examined for the presence of two virulence genes (tdh or trh) using polymerase chain reaction; however, neither gene was found in any of the isolates. A disk diffusion susceptibility test, showed that all of the strains studied were resistant to clindamycin, oxacillin, ticarcillin, and vancomycin, and also revealed varying levels of resistance to ampicillin (98.8%), penicillin G (95.2%), streptomycin (20.5%), cefoxitin (14.5%), amikacin (6.0%), cephalothin (4.8%), and erythromycin (3.6%). However, all of the strains were susceptible to 19 other antimicrobial agents, including cefepime, cefotaxime, chloramphenicol, gentamycin, nalidixic acid, sulfamethoxazole/trimethoprim, and trimethoprim. All 83 isolates (100%) were resistant to five or more classes of antimicrobials, and two strains exhibited resistance to ten antimicrobial agents. The average minimum inhibitory concentrations against V. parahaemolyticus of clindamycin, oxacillin, ticarcillin, and vancomycin were 55.9, 98.3, 499.3, and 44.3 ㎍/mL, respectively. These results provide new insight into the necessity for seawater sanitation in Gomso Bay and commercial fisheries, and provide evidence to help reduce the risk of contamination by antimicrobial-resistant bacteria.

Physical and Sedimentological Changes in the Keum Estuary after the Gate-Close of Keum River Weir (하구언 갑문폐쇄 후 금강하구의 물리, 퇴적학적 특성변화)

  • 최진용;최현용
    • 한국해양학회지
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    • v.30 no.4
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    • pp.262-270
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    • 1995
  • A comparative study to understand the changes in physical and sedimentological natures was carried out in the Keum Estuary before and after the gate-close of Keum River weir. After closing of weir-gate maximum tidal current speed decreased about 30∼40% compared with that of the previous gate-opening period. Water masses also represent vertical stratifications both on water salinity and water transparency. The Keum Estuary seems to be changed from the well-mixed type estuary during the gate-opening period to the "partially-mixed type" and/or "salt-wedge type" estuary after the closing of weir-gate. The concentrations of suspended matter range 10∼100 mg/l in surface waters after the gate-close of Keum River Weir, representing about 1/4 to 1/3 decrease than those during the gate-close of Keum River Weir, representing about 1/4 to 1/3 decrease than those during the gate0opening period. Such decrease of suspended mater appears to be due to the decrease in the resuspension of bottom sediments, and also due to the vertical stratification of water masses that prevented the upward diffusion of turbid bottom waters. It is, therefore, expected that the depositional environment of Keum Estuary has been changing into the low energy conditions after the closing of weir gate, resulting in the rapid deposition of fine suspended matters within the Keum Estuary.

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Carbon tip growth by electron beam deposition (전자빔 조사에 의한 탄소상 탐침의 성장)

  • 김성현;최영진
    • Journal of the Korean Vacuum Society
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    • v.12 no.2
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    • pp.144-149
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    • 2003
  • Carbon tips were grown on Si cantilevers by applying an electron beam to them directly with Scanning Electron Microscope. A carbon tip was fabricated by aligning the electron beam directly down the vertical axis of Si cantilever and then irradiating a single spot on the cantilever for a proper time in the dominant atmosphere of residual gases generated by the oil of the diffusion pump. A number of control parameters for SEM, including exposure time, acceleration voltage, emission current, and beam probe current, were allowed to make various aspect ratio feature. The growth of carbon tips was not affected by the surface morphology of substrates. We could acquired the tip whose effective length is 0.5 $\mu\textrm{m}$, bottom diameter is 90 nm and cone half angle $3.5^{\circ}$ The growth technique of the high aspect ratio carbon tips on the tip-free cantilevers is available to reduce the complexities of fabricating sub-micron scale tips on the PZT thin film actuator integrated AFM cantilevers.

Power-Dependent Characteristics of $n^+$-p and $p^+$-n GaAs Solar Cells

  • Kim, Seong-Jun;Kim, Yeong-Ho;No, Sam-Gyu;Kim, Jun-O;Lee, Sang-Jun;Kim, Jong-Su;Lee, Gyu-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.236-236
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    • 2010
  • 단일접합 $n^+-p/p^+$ (p-emitter) 및 $p^+-n/n^+$ (n-emitter) GaAs 태양전지 (Solar Cell)를 각각 제작하여, 그 소자특성을 비교 분석하였다. AM 1.5 (1 sun, $100\;mW/cm^2$) 표준광을 조사할 경우, p-emitter/n-emitter 소자의 개방회로전압 (Voc), 단락회로전류 (Jsc), 충전율 (FF), 효율 (Eff)은 각각 0.910/0.917 V, $15.9/16.1\;mA/cm^2$, 78.7/78.9, 11.4/12.1%로서, n-emitter 소자가 다소 크지만 거의 비슷한 값을 가지고 있었다. 태양전지의 집광 특성을 분석하기 위하여 조사광의 출력에 따른 태양전지의 소자 특성을 측정하였다. 조사광 강도가 높아짐에 따라 p-emitter 소자의 특성은 점진적으로 증가하는 반면, n-emitter는 1.3 sun에서 약 1.4 배의 최대 효율 (17%)을 나타내고 조사광이 더 증가함에 따라 급격히 감소하는 특성을 보여 주었다. (그림 참고) 본 연구에서 사용한 2종류 소자의 층구조는 서로 반대되는 대칭구조로서, 모두 가까이에 위치하고 있는 표면전극 (surface finger) 방향으로 소수전하 (minority carrier)가 이동하고 다수전하 (majority carrier)는 기판 (두께 $350\;{\mu}m$)을 통한 먼 거리의 후면전극 (back electrode)으로 표류 (drift)되도록 설계되어 있다. 이때, n-emitter에서는 이동도 (mobility)와 확산길이 (diffusion length)가 높은 전자가 후면전극으로 이동하기 때문에 적정밀도의 전자-정공 쌍 (EHP)이 여기될 경우에는 Jsc와 Eff가 극대화되지만, 조사광 강도 또는 EHP가 더 높아질 경우에는 직렬저항의 증가와 함께 전류-전압 (I-V)의 이상인자 (ideality factor)가 커짐으로서 FF와 효율이 급격히 감소한 결과로 분석된다. 현재 전산모사를 통한 자세한 분석을 진행하고 있으며, 본 결과는 효율 극대화를 위한 최적 층구조 및 도핑 밀도 설계에 활용할 수 있을 것으로 판단된다.

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Strain-induced enhancement of thermal stability of Ag metallization with Ni/Ag multi-layer structure

  • Son, Jun-Ho;Song, Yang-Hui;Kim, Beom-Jun;Lee, Jong-Ram
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.157-157
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    • 2010
  • Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

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