• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• 한국표면공학회지
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• 제56권5호
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• pp.299-308
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• 2023

In this study, phosphorus (P)-doped nickel cobaltite (P-NiCo₂O₄) and nickel-cobalt layered double hydroxide (P-NiCo-LDH) were synthesized on nickel (Ni) foam as a conductive support using hydrothermal synthesis. The thermal properties, crystal structure, microscopic surface morphology, chemical distribution, electronic state of the constituent elements on the sample surface, and electrical properties of the synthesized P-NiCo₂O₄ and P-NiCo-LDH samples were analyzed using thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The P-NiCo₂O₄ electrode exhibited a specific capacitance of 1,129 Fg^-1 at a current density of 1 Ag^-1, while the P-NiCo-LDH electrode displayed a specific capacitance of 1,012 Fg^-1 at a current density of 1 Ag-1. When assessing capacity changes for 3,000 cycles, the P-NiCo₂O₄ electrode exhibited a capacity retention rate of 54%, whereas the P-NiCo-LDH electrode showed a capacity retention rate of 57%.

• 멤브레인
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• 제32권4호
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• pp.253-263
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• 2022

본 연구에서는 하수 재이용을 위한 역삼투막 공정에서 전처리 정밀여과막(MF) 손상에 대한 누출되는 다양한 수질변화로써 막 손상 검지 방안을 제시하였다. 이를 위하여 역삼투막 유입수질 적합성 평가지표인 SDI (silt density index)를 3에서 5의 범위 내에서 막 손상 시 검지 감도를 정량화하기 위하여 전처리 분리막이 1에서 3가닥 파단에 따라 SDI는 1.92에서 6.11까지 증가한 결과를 확인할 수 있었다. 일반적으로 3을 기준으로 역삼투막 유입수질로 설정하였을 때 분리막이 3가닥까지 파단이 되어야만 막 손상 검지가 가능하다는 것을 의미하며 역삼투막의 오염은 잠재적으로 가속화되어 효율을 저하시킬 수 있다. 또한 이때 누출되는 입자성과 유기물질에 대하여 0.45 ㎛ 이상의 크기만 걸러주는 입자계수는 입도분포별 막 파단 개수에 따라 일정한 패턴을 확인할 수 없었으며, TOC 농도는 약 2배의 변화패턴으로써 SDI와의 상관관계로써 TOC가 막 손상 수질지표로써 신뢰성이 높은 것으로 확인되었다. 수질분석결과와 더불어 USEPA에서 제시하는 막 손상 검지 방법 중 압력손실시험과 이를 기반으로 LRV_DIT 모델의 적합성 평가를 한 결과 막 손상 또는 역삼투막 공정으로 유입되는 막오염물질을 신속하게 확인할 수 있는 SDI 및 TOC를 포함한 LRV_DIT 모니터링과 UCL 설정을 병행해야 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• 전자공학회논문지A
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• 제31A권12호
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• 한국분말재료학회지
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• 제24권6호
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• pp.489-493
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• 2017

In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron-hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1996년도 춘계학술발표회 논문집
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• pp.158-161
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• 1996

Microfibers of Poly(ethylene terephthalate)(PET)/Nylon 6 (P/N) was heat set at 170C in a fixed state and then treated with hydrazine at 30C for 5, 10, 15, 20, 30 and 40 h. Weight loss from the hydrazine treatment increased according to the hydrazine concentration(Fig.1). In order to investigate in detail the effect of the electrostatic attraction between the dye anion and hydrazide groups in cooperated by hydrazinolysis, -potential of P/N fiber was measured by streaming potential method. The surface charge density, o, of the fiber was evaluated from the -potential.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.2013-2018
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• 2014

The adsorption and decomposition of trimethylene oxide ($C_3H_6O$) molecule on the Al(111) surface were investigated by the generalized gradient approximation (GGA) of density functional theory (DFT). The calculations employed a supercell ($6{\times}6{\times}3$) slab model and three-dimensional periodic boundary conditions. The strong attractive forces between $C_3H_6O$ molecule and Al atoms induce the C-O bond breaking of the ring $C_3H_6O$ molecule. Subsequently, the dissociated radical fragments of $C_3H_6O$ molecule oxidize the Al surface. The largest adsorption energy is about -260.0 kJ/mol in V3, V4 and P2, resulting a ring break at the C-O bond. We also investigated the decomposition mechanism of $C_3H_6O$ molecules on the Al(111) surface. The activation energies ($E_a$) for the dissociations V3, V4 and P2 are 133.3, 166.8 and 174.0 kJ/mol, respectively. The hcp site is the most reactive position for $C_3H_6O$ decomposing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.172-172
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• 1999

Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

• Bulletin of the Korean Chemical Society
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• 제32권4호
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• pp.1187-1194
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• 2011

The hydrogen abstraction reaction of $CF_3CH_2CHO$ + OH has been studied theoretically by dual-level direct dynamics method. Two stable conformers, trans- and cis-$CF_3CH_2CHO$, have been located, and there are four distinct OH hydrogen-abstraction channels from t-$CF_3CH_2CHO$ and two channels from c-$CF_3CH_2CHO$. The required potential energy surface information for the kinetic calculation was obtained at the MCG3-MPWB//M06-2X/aug-cc-pVDZ level. The rate constants, which were calculated using improved canonical transitionstate theory with small-curvature tunneling correction (ICVT/SCT) were fitted by a four-parameter Arrhenius equation. It is shown that the reaction proceeds predominantly via the H-abstraction from the -CHO group over the temperature range 200-2000 K. The calculated rate constants were in good agreement with the experimental data between 263 and 358 K.