• Advances in nano research
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• 제10권3호
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• pp.211-219
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• 2021

The evaluation of the corrosion resistance of titanium with a TiO2 nanotubes top layer was carried out (TiO2 NT). These nanostructures were evolved into anatase nanoparticles without heat treatment in an aqueous medium, which is a novel phenomenon. This work analyzes the layer between the nanotube bottom and the substrate, which is thin and still susceptible to corrosion. The bottom of TiO2 nanotubes having Fluor resulting from the synthesis process changed between amorphous to crystalline anatase with a crystallite size of about 4 nm, which influenced the corrosion rates. Four kinds of samples were evaluated. A) NT by Ti anodizing; B) NTSB for Ti plates, either modifying its surface or anodizing the modified surface; C) NT-480 for anodized Ti and heat-treated (480℃) for reaching the anatase phase; D) NTSB-480 for Ti plates, first, modifying its surface using sandblast, after that, anodizing the modified surface, and finally, heat-treated to 480℃ to compare with samples having induced crystallization and passivation. Four electrochemical techniques were used to evaluate the corrosion rates. The surfaces having TiO2 nanotubes with a sandblast pre-treatment had the highest resistance to corrosion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.729-731
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• 1998

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute, $700^{\circ}C$ firing temperature, and $O_2$ atmosphere, I can get the fine films $5.8{\mu}m$ thickness with Zinc borosilicate glass. As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interlace.

• Journal of Advanced Marine Engineering and Technology
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• 제22권5호
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• pp.702-711
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• 1998

The characteristics of corrosion resistance for the surface of medium high carbon steels and low alloy steels utilizing as manufacturing the machinery structures and machining tools and treating by plasma/ion nitriding process have been studied in terms of electrochemical polarization behav-iors including corrosion potential(Ecorr) anodic polarization trends and polarization resistance(Rp) The seven base materials showed a clear passivation behavior for the polarization tests in the ASTM standard solution 1N ${H_2){SO_4}$ Although the treated surface by plasma nitriding for the seven test materials showed a significant increase in hardness the treatment gave a detri-mental effect in corrosion resistance. The various characteristics including corrosion potential polarization curves microstructures corrosion current polarization resistance among non-treat-ed nitriding and/or soft-nitriding treated specimens have been investigated and some of the mechanisms discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.287.2-287.2
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• 2014

PV (photovoltaic) has becoming an important industry to invest due to its high robustness and require very little maintenance which goes a long time. Solar cell fabrication involves a few critical processes such as doping to make the N-type and P-type silicon, contact metallization, surface texturization, and anti-reflection coatings. Anti-reflection coating is a kind of surface passivation which ensures the stability, and efficiency of the solar cell. Thus, I will focus on the changes happen to the solar cell due to the reflectance and anti-reflection coating by PC1D. By using the PC1D (solar cell simulation program), I would analysis the effect of reflectance on the N-type cell. At last I will conclude the result regarding what I learned throughout this experiment.

• 한국재료학회지
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• 제3권5호
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• 한국컴퓨터정보학회논문지
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• 제5권4호
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• pp.102-105
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• 2000

외부 베이스 표면에 형성되는 표면 재결합 상태의 불안정성을 개선하기 위해 에미터 ledge 구조로 제작된 InGaP/GaAs HBT의 신뢰도 측정을 위해 고온에서 오랜 시간동안 정전류 스트레스를 인가하였다. 553K, 533K, 513K에서 콜렉터 전류 24㎃로 스트레스를 인가해 전류이득의 열화를 관찰하였다. 그 결과 EA＝1.97eV, WTTF＝4.8$\times$108시간(14$0^{\circ}C$)을 구하였다. InGaP/GaAs HBT의 열화 원인은 베이스 도펀트인 C의 확산으로 추정된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.95-95
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• 2016

은나노와이어 투명전극은 높은 투과도와 높은 전도도를 가짐과 동시에 높은 유연성을 가지고 있어 차세대 투명전극으로 주목받고 있다. 많은 연구자들이 이를 이용하여 다양한 전자소자에 대한 적용 연구를 수행하고 있고, 터치스크린에 적용한 제품 등이 실제로 선보이고 있다. 하지만 ITO에 비해 높은 생산 단가와 낮은 열적, 환경적인 안정성은 이를 다양한 품목에서 실용화하는데에 있어 문제가 되고 있다. 은나노와이어에 장시간 열이 가해지거나, 습도에 노출되거나, 국소 부분에 높은 열/전류가 가해지게 되면 Rayleigh Instability 현상을 보이며 각각의 나노와이어가 끊어지는 현상이 발생한다. 또한, 공기 중의 수분에 의한 산화가 발생하는 문제도 존재한다. 이러한 문제를 해결하기 위해 상부에 이종의 물질을 덮어 Passivation을 수행하지만, 이는 생산 단가의 상승으로 이어진다. 본 연구에서는 플라즈마 기술을 활용하여 은나노와이어의 특성을 강화시키는 연구를 수행하였고, 이종의 물질 형성 없이 전기적, 환경적 안정성을 향상시킬 수 있었다. 또한 전기적 특성의 향상으로 인해 더 적은 은나노와이어의 양으로도 같은 전기적 특성을 가질 수 있었고, 이를 통해 높은 투과도/재료소모 절감의 효과를 동시에 얻을 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.183-183
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• 2013

본 연구는 전착법으로 형성된 $Cu_2O$ 박막의 광특성 변화를 고찰한 것이다. 0.3M $CuSO_4$과 4M Lactic acid에 4M NaOH로 전해액의 pH를 조절하여 $Cu_2O$ 박막의 결정성 및 극성을 조절하였다. $Cu_2O$ 박막의 결정성 및 극성에 따른 광특성을 고찰한 결과, 극성인 (111)면에서 광특성이 우수함을 확인하였다. 하지만, 측정시간의 증가에 따라 표면에 Cu 금속이 형성되어 광전류가 감소함을 확인 할 수 있었다. rGO는 페르미전위가 $Cu_2O$ 환원 전위보다 위쪽에 위치한다. 따라서 $Cu_2O$ 박막위에 rGO를 형성시켜 Cu 발생반응을 제한하고 광전류를 증가시키고자한다.