• 전자공학회논문지A
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• 제32A권9호
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.223-227
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• 2001

In this paper, the authors present the fabrication of high-yield Si thin-membranes by electrochemical etch-stop in tetramethyl ammonium hydroxide (TMAH): isopropyl alcohol (IPA):pyrazine solutions. The current-voltage (I-V) characteristics of n- and p-type Si in TMAH:IPA;pyrazine solutions were analysed, repsectively. Open circuit potential (OCP)and passivation potential (PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was applied to the fabrication of 801 micro-membranes with 20.0 $\mu\textrm{m}$ thickness on a 5" Si wafer. The average thickness of fabricated 801 micro-membranes on one wafer 20.03$\mu\textrm{m}$ and the standard deviation was ${\pm}$0.26$\mu\textrm{m}$. The Si surface of the etch-stopped micro-membranes was extremely flat with no noticeable taper or nonuniformity. The results indicate that use of the electrochemical etch-stop method for the etching of Si in TMAH:IPA;pyrazine solutions provides a powerful and versatile alternative process for fabricating high-yield Si micro-membranes.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.18-21
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• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• 한국산학기술학회논문지
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• 제8권4호
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• pp.738-742
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• 2007

능동형 평판디스플레이 소자를 제작하기 위해 수소화된 비정질 규소 박막트랜지스터 (a-Si:H TFT)의 상부에 화소전극을 형성하는 과정에 따른 TFT의 특성 변화를 연구하였다. 화소전극 형성 전에 1 pA 수준의 오프상태 전류 및 $10^6$ 이상의 스위칭률을 보이던 TFT에 화소전극 공정을 행하면 오프상태 전류가 10 pA 이상으로 증가하여 소자특성이 악화되었다. 이러한 소자특성의 악화는 SiNx 보호막 표면의 플라즈마 처리로 개선될 수 있었는데, 특히 $N_2$ 플라즈마가 좋은 결과를 보였다. 화소전극 공정에 의해서 누설전류가 증가하는 것은 투명전도막 증착공정 중에 SiNx 보호막 표면에 전하가 축적되어 이에 유도되는 백채널의 캐리어 축적에 기인하는 것으로 추정된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.152-152
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• 2010

이종접합 태양전지에서 Intrinsic a-Si:H의 역할은 상당히 중요하다. Passivation 효과와 높은 Voc에 이르는 핵심적인 Layer이다. 본 연구는 Intrinsic a-Si:H Layer의 증착조건을 가변하여 최적의 Passivation 효과를 얻는데 목적이 있다. 웨이퍼는 n-Type $500\;{\mu}m$두께에를 사용하였다. Intrinsic a-Si:H Layer는 $SiH_4$ 가스와 $H_2$ 가스를 혼합하여 증착하게 되는데 혼합비는 1:5로 고정하였다. 증착두께는 이종접합 태양전지에서 필요한 5nm로 고정하였으며 증착장비는 PECVD를 이용하였다. PECVD는 VHF(60MHz)를 이용하였고 증착온도는 $200^{\circ}C$로 고정하여 진행하였다. 가변내용은 전극거리와 파워, 압력이다. 전극거리는 20mm에서 80mm까지 가변하였고 압력은 100mTorr에서 500mTorr까지 가변하였다. 파워는 플라즈마의 방정특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. 측정은 QSSPC 방식으로 Carrier Lifetime과 Implied Voc를 측정하였으며 두께는 Ellipsometry를 이용하여 측정하였다. 전극거리 60mm에서 증착압력은 400mTorr이고 파워는 $14mW/cm^2$에서 가장 높은 Carrier Lifetime 과 Implied Voc를 나타내었다. Carrier Lifetime은 2.2ms이고 Implied Voc는 709mV를 달성 하였다. Carrier Lifetime이 높으면 Surface Recombination이 낮다는 의미이며 이는 고효율 이종접합 태양전지 제작에 있어서 직렬저항을 줄일 수 있는 필수적인 요소이다. Implied Voc는 이종접합 태양전지의 Voc에 직결된 인자로 이종접합 태양전지의 Voc를 예상할 수 있는 중요한 요소이다.

• 신재생에너지
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• 제2권2호
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• pp.4-8
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1531_1532
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• 2009

This paper presents a method of self-arranging solderballs by using surface energy difference. After evaporating Au which has high surface energy on Si substrates, Teflon passivation layer which has low surface energy was patterned by lift-off process. Droplets formed only on the hydrophilic Au solderball lands by the surface energy difference, not the hydrophobic Teflon surface. Scattered solderballs sticked by themselves to the wetted solderball lands on the tilted substrate. After setting preheating of $200^{\circ}C$ and soldering of $245^{\circ}C$ hot plates, the solderballs were soldered on the solderball lands and two substrates were soldered together completely. After measuring the mechanical shear strength of the soldered substrates with solderballs of $3{\times}3$, $4{\times}4$ and $5{\times}5$ arrays. the calculated shear strength per one solderball was 1.1~2.4kgf as high as the previous report.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.183-186
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 한국광학회지
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• 제1권1호
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• pp.73-86
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• 1990

The technique of Spectroscopic Ellipsometry (SE) has been examined with emphasis on its inherent sensitivity to the existence of thin films or surface equivalents. A brief review of related theories like the Fresnel reflection coefficients, the effect of a multilayer upon reflectivities, together with the validity of the effective medium theory and the modelling procedure, is followed by a short description of the experimental setup of a rotating polarizer type SE as well as the necessful expressions which lead to tan and cos. Out of its numerous, successful applications, a few are exampled to convince a reader that SE can be applied to a variety of research fields related to surface, interface and thin films. Specifically, those are adsorption and/or desorption on metals or semiconductors, oxidation process, formation of passivation layers on an electrode, thickness determination, interface between semiconductor and its oxide, semiconductor heterojunctions, surface microroughness, void distribution of dielectric, optical thin films, depth profile of multilayered samples, in-situ or in-vitro characterization of a solid surface immersed in electrolyte during electrochemical, chemical, or biological treatments, and so on. It is expected that the potential capability of SE will be widely utilized in a very near future, taking advantage of its sensitivity to thin films or surface equivalents, and its nondestructive, nonperturbing characteristics.

• 대한기계학회논문집
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• 제17권2호
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• pp.300-312
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• 1993

The material deterioration of service-exposed boiler tube steels in fossil power plant was evaluated by using the electrochemical technique namely, modified electrochemical potentiokinetic reactivation(EPR). It was focused that the passivation of Mo$_{6}$C carbide which governs the mechanical properties of Mo alloyed steels did not occur even in the passivity region of steel in sodium molybdate solution and the reactivation peak current (Ip) observed as the result of non-passivation indicating the precipitation of Mo$_{6}$C carbides. To obtain the optimal test conditions for the field test by using the specially designed electrochemical cell, the effects of scan rate, the surface roughness and the pH of electrolyte on Ip value were also investigated. Furthermore, the change of mechanical properties occurred during the long time exposure at high temperature was evlauated quantitatively by small punch(SP) tests and micro hardness test taking account of the metallurgical changes. It is known that reactivation peak current (Ip) has a good relationship with Larson-Miller Parameter(LMP) which represents the information about material deterioration occurred at high temperature environment. In addition it was possible to estimate the ductile-brittle transition temperature (DBTT) by means of the SP test. The Sp test could be, therefore, suggested as a reliable test method for evaluating the material degradation of boiler tube steels. From the good correaltion between the SP DBTT and Ip values shown in this study, it was knows that the change of mechanical properties could be evaluated non-destructively by measurring only Ip values.ues.