Fabrication of High-yield Si Thin-membranes by Electrochemical Etch-stop

전기화학적 식각정지에 의한 고수율 실리콘 박막 멤브레인 제작

  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 박진상 (삼성종합기술원 MEMS팀) ;
  • 이원재 (삼성종합기술원 MEMS팀) ;
  • 송재성 (삼성종합기술원 MEMS팀)
  • Published : 2001.03.01

Abstract

In this paper, the authors present the fabrication of high-yield Si thin-membranes by electrochemical etch-stop in tetramethyl ammonium hydroxide (TMAH): isopropyl alcohol (IPA):pyrazine solutions. The current-voltage (I-V) characteristics of n- and p-type Si in TMAH:IPA;pyrazine solutions were analysed, repsectively. Open circuit potential (OCP)and passivation potential (PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was applied to the fabrication of 801 micro-membranes with 20.0 $\mu\textrm{m}$ thickness on a 5" Si wafer. The average thickness of fabricated 801 micro-membranes on one wafer 20.03$\mu\textrm{m}$ and the standard deviation was ${\pm}$0.26$\mu\textrm{m}$. The Si surface of the etch-stopped micro-membranes was extremely flat with no noticeable taper or nonuniformity. The results indicate that use of the electrochemical etch-stop method for the etching of Si in TMAH:IPA;pyrazine solutions provides a powerful and versatile alternative process for fabricating high-yield Si micro-membranes.

Keywords

References

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