• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.773-780
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• 1996

Silicon oxide films were prepared by using five kinds of organosilicon compound as gas sources without oxygen by rf plasma-enhanced CVD (PECVD). UV light was irradiated on a substrate vertically during deposition to enhance film oxidation and ablation of carbon contamination in a deposited films. Films prepared with UV irradiation contained less carbon than those prepared without UV irradiation. The oxidation of the films was improved by UN irradiation. The effect of UV irradiation was, however, not observed when the films were prepared with tetramethy lsilane (TMS) which contained no oxygen atom. Dissociated oxygen atoms from an organosilicon compound were excited in the plasma with UV irradiation around the substrate surface and affected the enhancement of film oxidation and ablation of carbon in the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.186-186
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• 2011

[100] 방향으로 4$^{\circ}$ 기울어진 Si(001)-2${\times}$1(vicinal surface)을 초고진공하(UHV)에서 청결하게 하고 열처리하면 rebonded-atom을 가진 DB double step과 이 step에 나란한 아홉 개의 dimer를 가진 평균 폭이 4.0 nm인 single-domain의 (001)-2${\times}$1 테라스의 면으로 재구조된다 [그림 a]. 본 연구에서는 이 표면 위에 Sb을 상온에서 증착하여 덮고 후열처리하면(2 ML, 500$^{\circ}C$ 10 분), Sb-dimer가 Si 표면을 한 층 덮고 (001) 테라스의 Sb-dimer 방향이 DA double-step과 수직을 이루는 1${\times}$2 구조를 이룬다는 사실을 STM으로 확인하였다 [그림 b]. 이러한 Sb-passivation의 효과는 표면 Si-dimer의 부분적으로 채워진 dangling-bond를 Sb-dimer의 완전히 채워진 고립쌍(lone-pair)으로 바꿈으로써 표면 자유 에너지를 줄이고, 나아가 계면 Si 층은 bulk에 유사하게 되는 데에 있다. 이 passivation 된 표면은 Ge/Si 등의 heteroepitaxy에 사용할 수 있고, 특히 single-domain을 유지하며 step 방향에 대해 평행인 dimer-row로 이루어져 있어서 원자나 전자의 이동에 비등방적 효과를 증가시킬 것이 예측된다.

• Journal of the Korean institute of surface engineering
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• v.25 no.4
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• pp.173-180
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• 1992

The effects of the stabilizing additives such as NaCN, 2-MBT and Thiourea on bath decom-position, plating rate and surface morphology have been studied. Bath stability was increased in the order of an additive-free bath, and NaCN-, 2-MBT-, and Thiourea-stabilized baths. The sta-bilizing effects may be attributed to the stability of Cu(II) -complexes. The plating rate is the re-verse order of the bath stability. Accelerative effect of 2-MBT in proper quantity(0.3mg/$\ell$) may be explained by visualizing it absorbed through benzene ring or sulfur atom on portions of the sub-strates. The strong bond of the complexing part of the molecule to nearby chelated copper ions would tend to accelerate plating by making it easier for the Cu2+ -ligand bond to be broken. Sur-face morphologies of copper deposits depend on the bath additives. Electroless copper deposits from the 2-MBT stabilized baths are finer than the deposits from the NaCN- and Thiourea- stabi-lized baths due to the strong adsorption on the substrates.

• Journal of the Korean institute of surface engineering
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• v.21 no.2
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• pp.76-82
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• 1988

The bright nickel electroplatings were carried out the Watt bath containg a solobel saccharin as class I brightner and para substituted benzaldehydes as class II one. Extended Huckel MO calculation was done and polarization was measured to examine between $\pi$-electron density and the brightness. The correlation is also investigated between $\pi$-electron density of oxygen atom of aldehyde group and slope of polarization curve. As a result of the analysis of rate equation of nucleation, the surface energy of the deposited particle was obtained from the slope of the plot of $\ell$nI against 1/η2, and also the reat equation of nucleation found to influnced on the leveling on the basis of adsorption theory. We have proposed the general electroplating mechanism that is applied other to all other electroplating but nickel one. The above elucidated mechanism can be extended can be extended to the all electroplating other than bright nickel electroplating.

• Bulletin of the Korean Chemical Society
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• v.12 no.4
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• pp.387-392
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• 1991

We present a theoretical investigation of the inelastic atom-surface phonon scattering for a model He-Si(100) system by the classical trajectory-quantum forced oscillator(DECENT) method. Single and multi-phonon transition probabilities of normal modes are calculated for several initial beam orientations and several initial kinetic energies. In order to understand surface structure effects, the calculation has been done on both reconstructed and unreconstructed surfaces of the He/Si(100) system. The origin of mode specificity for energy transfer is discussed. The contribution of one, two, and multi-phonon events to the total energy transfer between 0 and 600 K is also given.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.306-309
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• 2000

In this work, we investigated A1 cluster deposition on Al (100) surface using molecular dynamics simulation. A result of simulations showed that large cluster with low energy was proper for good surfaced-films without craters at the low temperatures. We investigated the maximum substrate temperature and the time taken for substrate temperature to reach its maximum as a function of cluster size in the case of the same total energy and in the case of the same energy Per atom. The correlated collisions play an important role in interaction between energetic cluster and surface, and as cluster size and cluster energy increases, the correlated collisions effect affects interaction between energetic cluster and surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.184-184
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• 2011

Using first-principles density-functional calculations, we investigate the chain reaction mechanism of allyl alcohol (ALA) molecules on the H-terminated Si(001)-2${\times}$1 surface. Recently, it was reported [1] that allyl mercaptan (ALM) molecules show a self-directed line growth across the dimer rows through a chain reaction involving several reaction processes: (i) The created radical at the C atom is transferred to the S atom, (ii) the resulting S-centered radical easily abstracts an H atom from the neighboring dimer row, and (iii) the generated S-H group further reacts with the neighboring dimer row to produce the Si-S bond on the neighboring dimer row, accompanying the associative desorption of H2. This H2-desorption process creates a new DB on the neighboring dimer row, setting off the chain reaction across the dimer rows. In the present study, we find that although the structure of ALA with -OH functional is analogous to that of ALM with -SH functional, ALA and ALM lines show a difference in their growth direction. We predict that ALA undergoes the chain reaction to show a line growth along the dimer row, contrasting with the ALM line growth across the Si dimer rows. Our analysis shows that the different growth direction of ALA is due to the strong instability of oxygen radical intermediate, which prevents from growing across the dimer rows. Thus, we demonstrate that the stability of the radical intermediate plays a crucial role in determining the direction of molecular line growth.

• Journal of Magnetics
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• v.13 no.4
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• pp.144-148
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• 2008

The size and surface effects on the magnetism of a fcc Fe (001) surface was investigated by performing firstprinciples calculations on 3, 5, 7, and 9 monolayers fcc Fe (001) single slabs with two different two-dimensional lattice constants, ${\alpha}=3.44{\AA}$ (System I) and 3.65 ${\AA}$ (System II), using the all-electron full-potential linearized augmented plane wave method within a generalized gradient approximation. The surface layers were coupled ferromagnetically to the subsurface layer in both systems. However, the magnetism of the inner layers was quite different from each other. While all the inner layers of System II were ferromagnetically coupled in the same way as the surface layer, the inner layers of System I showed a peculiar magnetism, bilayer antiferromagnetism. The calculated spin magnetic moments per Fe atom were approximately 2.7 and 2.9 ${\mu}_B$ at the surface for Systems I and II, respectively, due to the almost occupied Fe d-state being in the majority spin state and band narrowing. The spin orientations of System I were out-of-plane regardless of its thickness, whereas the orientation of System II changed from out-of-plane to in-plane with increasing thickness.

• Bulletin of the Korean Chemical Society
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• v.19 no.7
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• pp.733-737
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• 1998

Using an atom superposition and electron delocalization molecular orbital (ASED-MO) method, we have compared adsorption properties of adsorbates on the Pt(Ill) surface with the Pt(lll)/γ-Al203 surface in the ethylene hydrogenation reaction. In two-layer thick model systems, the calculated activation energy of the hydrogenation by the surface platinum hydride is equal to the energy by the hydride over supported platinum/γ-alumina. The transition structure on platinum is very close to the structure on the supported platinum/γ-alumina surface. Hydrogenation by the surface hydride on platinum can take place easily because the activation energy is about 0.5 eV less than hydrogenation by ethylidene. On supported platinum/,y-alumina the activation energy of the hydride mechanism is about 0.61 eV less than that of ethylidene mechanism. In one-layer thick model systems, the activation energy of hydrogenation by ethylidene is about 0.13 eV less than the activation energy of hydride reaction. The calculated activation energy by the hydride over the supported platinum y-alumina is 0. 24 eV higher than the platinum surface. We have found from this result that the catalytic properties of one-layer thick model systems have been influenced by the support but the two-layer thick model systems have not been influenced by the support.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.163-163
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• 2003