• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• 한국재난정보학회 논문집
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• 제12권3호
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• pp.273-278
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• 2016

본 연구에서는 인명구조용 근력지원장치 개발의 필요성, 목적, 개발방향을 설정하고 개발완료 예정인 근력지원장치가 적용가능한 재난현장을 분석하였다. 이를 위해 재난 및 안전관리기본법에 따라 재난을 분류하고 근력지원장치가 적용가능한 대표적 공통 재난현장을 분석하였다. 그 결과, 적용가능한 재난현장으로 13개 재난현장으로 분류되었다. 첫 번째로 사회재난현장으로 8개 현장으로 분류되었으며 각 현장은 화재현장(진압), 화재현장(구조), 붕괴사고현장, 교통사고현장, 폭발사고현장, 화생방사고현장, 환경오염사고현장, 기타 안전사고발생 현장이다. 두 번째로 자연재난현장으로 4개 현장으로 분류되었으며 각 현장은 지진발생현장, 홍수발생현장, 태풍발생현장, 기타자연재난현장이다. 마지막으로 기타 재난현장으로 1개 현장으로 분류되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.79-80
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• 1994

A systematic study on isoelectronic impurities in thin-film eletroluminescent devices (TFELD) has been made on the basis of the experimental analysis aimed at a survey for the blue-emitting materials. Codoping effects of isoelectronic impurities, such as oxygen(O), tellurium(Te), and lithium(Li), on the emissive characteristics of ZnS:Ce$^{3+}$ and ZnS:Tm$^{3+}$TFELD have been investigated by means of the X-ray diffraction studies, the Auger electron spectroscopy, the cathodoluminescent spectra, and the electroluminescent spectra. Experiment results reveal that oxygen codoping gives rise to an increase of the luminance, due to a suppression of the nonradiative energy transfer via sulfur vacancies Te codoping in ZnS:Ce$^{3+}$ TFELD result in a large change in the crystal field around Ce$^{3+}$ ions. Li codoping in ZnS:Tm$^{3+}$ TFELD causes the luminance to increase slightly, due to a lowering in the symmetry of Tm$^{3+}$ions. Likewise, the experimental results suggest strongly that an Auger-type enegy loss via lattece defects such an sulfur vacancies acts as a non-emissive in TFELD.ve in TFELD.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1795-1799
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• 2013

The corrosion property of aluminum by lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) salt is investigated in liquid and gel electrolytes consisting of ethylene carbonate/propylene carbonate/ethylmethyl carbonate/diethyl carbonate (20:5:55:20, vol %) with vinylene carbonate (2 wt %) and fluoroethylene carbonate (5 wt %) using conductivity measurement, cyclic voltammetry, scanning electron microscopy, and energy dispersive X-ray spectroscopy. All corrosion behaviors are attenuated remarkably by using three gel electrolytes containing 3 wt % of hydrophilic and hydrophobic fumed silica. The addition of silica particles contributes to the increase in the ionic conductivity of the electrolyte, indicating temporarily formed physical crosslinking among the silica particles to produce a gel state. Cyclic voltammetry also gives lower anodic current responses at higher potentials for repeating cycles, confirming further corrosion attenuation or electrochemical stability. In addition, the degree of corrosion attenuation can be affected mainly by the electrolytic constituents, not by the hydrophilicity or hydrophobicity of silica particles.

• 한국재료학회지
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• 제13권12호
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

• Journal of Advanced Marine Engineering and Technology
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• 제33권6호
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• pp.918-924
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• 2009

This paper deals with the experimental assessment of the vibration suppression of the smart structures. First, we have presented the paper about the new high-speed active control system that we have developed using the DSP320C6713 microprocessor and a peripheral system composed of a data acquisition system, A/D and D/A converters, piezoelectric (PZT) actuator/sensors, and drivers using PA95. Since fast data processing is very important in the active vibration control of the structures, we utilized the fast processing DSP320C6713 microprocessor as a main processor to the controller and fast peripheral devices for fast control loop. To realize a fast active vibration control, we have analyzed and tested the processing time of the peripheral devices and provided the corresponding test results. Especially, we have focused on achieving the fast signal amplification of the PA95 device since it takes most of loop times of the control system. Finally, we performed numerous experiments of active vibration control of the aluminum plate to validate the superior performance of the developed control system based on previous mode tests of the plate.

• 조명전기설비학회논문지
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• 제12권4호
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• pp.146-154
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• 1998

교류 전원선로에서 발생하는 수 kHz에서 수십 MHz에 이르는 광대역의 주파수특성올 가진 전원노이즈는 전기, 전자장비의 정상적인 동작에 많은 장해요소가 되고 있으며 이들 전도노이즈를 억제하기 위한 부품으로 현재 써어지 억제부품과 필터가 적용되고 있다. 그러나 기존의 대책부품은 전력공급선과 노이즈 피해회로를 전기적으로 완전히 절연시킬 수 없기 때문에 전도 노이즈 중에서 가장 크게 발생하는 공통모드 노이즈 억제성능이 제한 되고 있다. 본 논문에서는 절연변압기의 절연 특성에 정전 차폐를 추가함으로써 전도노이즈 및 써어지 억제기능이 우수한 NCf의 설계방법올 제시하였으며, 설계 제작된 1[kVA] NCT 시작품의 모의 등가회로에 대한 써어지 해석결과와 실험 측정 결과를 상호 비교하여 제안된 모델의 특성을 비교 평가하였다.

• 한국정밀공학회지
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• 제25권6호
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• pp.71-79
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• 2008

In the manufacture of flat panel display devices, there is a strong demand for contactless glass panel handling devices that can manipulate a glass panel without contaminating or damaging it. To fulfill this requirement, an electrostatic suspension device far glass panels where the glass panel is supported by electrostatic forces without any mechanical contact is proposed. To implement the system with low cost and compactness, switched-voltage control scheme that is based on the relay feedback control is utilized. Relay feedback control method deploys only a single high-voltage power supply that can deliver a DC voltage of positive and/or negative polarity and thus high voltage amplifiers that are costly and bulky are not needed any more. It is shown that despite the inherent limit cycle property of the relay feedback based control, an excellent performance in vibration suppression is attained due to the presence of a relatively large squeeze film damping originating from the electrodes and levitated object. Using this scheme, a $100{\times}100mm^2$ glass panel was levitated stably with airgap variation decreasing down to $1\;{\mu}m$ at an airgap of $100\;{\mu}m$.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.448-453
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• 2019

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.