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Yong Dae Choi;A. Ishida;Fujiyasu, H.
- Journal of the Korean Crystal Growth and Crystal Technology
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- v.6 no.3
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- pp.377-385
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- 1996
ZnS/ZnSe superlattices were prepared on GaAs (100) substrates by hot wall epitaxy, an the structures were analyzed using x-ray diffraction. It is shown that the x-ray diffraction of the strained superlattice gives very useful information about the thickness of each layer, strain, interdiffusion, and the fluctuation of the superlattice period. Interdiffusion length of the S and Se is estimated to be less than $2\;{\AA}$.
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Han, Gyu-Seok;Jeong, Hui-Chan;Gwon, Deok-Hyeon;Seong, Myeong-Mo
- Proceedings of the Korean Vacuum Society Conference
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- 2011.02a
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- pp.114-114
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- 2011
We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.
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Lee, Byeong-Hun;Lee, Gwang-Hyeon;Im, Seong-Il;Seong, Myeong-Mo
- Proceedings of the Korean Vacuum Society Conference
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- 2010.02a
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- pp.56-56
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- 2010
We report a low-temperature fabrication of organic/inorganic nanohybrid dielectrics for organic thin film transistors. The self-assembled organic layers (SAOLs) were grown by repeated sequential adsorptions of C=C-terminated alkylsilane and metal (Al or Ti) hydroxyl with ozone activation, which was called "molecular layer deposition (MLD)". The $TiO_2$ and $Al_2O_3$ inorganic layers were grown by ALD, which relies on sequential saturated surface reactions resulting in the formation of a monolayer in each sequence and is a potentially powerful method for preparing high quality multicomponent superlattices. The MLD method combined with ALD (MLD-ALD) was applied to fabricate SAOLs-$Al_2O_3$-SAOLs-$TiO_2$ nanohybrid superlattices on polymer substrates at relatively low temperature. The MLD method is an ideal fabrication technique for various flexible electronic devices.
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Park, Ju-Uk;Ju, Seung-Gi
- Journal of the Korean Magnetics Society
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- v.2 no.3
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- pp.251-256
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- 1992
Artificial superlattices of Co/Pd were prepared by RF magnetron sputtering Multilayered structure and compositional modulation were analyzed with a side angle x-ray diffractometer. It has been found that expansion of Co lattice occured in this artificial superlattice due to the lattice mismatch between Co and Pd. Perpendicular magnetic anisotropy could be observed when the Co layer thickness became less than 8${\AA}$ and maximum coercivity of 2350 Oe could be obtained in [Co(2.5 ${\AA}$)/Pd(9.3 ${\AA})]_{50}$/Pd$(200\;{\AA})$ with a perfect squareness of magnetic hysteresis loop. Characteristic of perpendicular magnetic anisotropy in Co/Pd superlattices could be related to the expansion of Co lattice caused by Pd layer and it turned out that as the thickness of Pd layer increased, perpendicular magnetic anisotropy increased. The interface anisotropy energy and volume anisotropy energy were calculated to be 0.29 ergs/$cm^2$ and -$6.9{\times}10^6$ ergs/$cm^3$ respectively, which are consistent with the values reported elsewhere.
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