• 한국자기학회지
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• 제22권1호
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• pp.15-18
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• 2012

Olivine 구조인 $LiFe_{0.9}Mn_{0.1}PO_4$ 분말 시료를 직접합성법(solid state method) 으로 제조하였으며, 결정학적 및 자기적 특성을 x-선 회절(x-ray diffractometer), 초전도 양자 간섭계(superconducting quantum interference devices) 및 뫼스바우어 분광(M$\ddot{o}$ssbauer spectroscopy) 실험을 이용하여 연구하였다. $LiFe_{0.9}Mn_{0.1}PO_4$ 시료의 결정구조는 공간그룹이 Pnma인 orthorhombic 구조임을 Rietveld 정련법으로 분석하였다. $LiFe_{0.9}Mn_{0.1}PO_4$ 시료의 닐온도 (N$\acute{e}$el temperature; $T_N$)는 50 K으로 나타내었고 닐온도에서 자기 상전이가 일어나는 것을 초전도 양자 간섭계 실험을 통하여 확인하였다. Fe(Mn)-O 이온간 거리를 분석하여 $FeO_6(MnO_6)$ 팔면체 구조가 비대칭임을 확인하였고 그 구조로 인하여 강한 결정장에 영향을 받으며, 닐온도 이상에서 자기 2중극자 상호작용은 사라지고, 강한 결정장에 의한 전기 4중극자 작용만이 존재하여 두 개의 흡수선이 나타나는 것을 뫼스바우어 분광 실험을 통하여 분석하였다.

• 센서학회지
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• 제7권1호
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• pp.61-66
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• 1998

C-축으로 배향된 고품질 $YBa_{2}Cu_{3}O_{7}$ 박막을 펄스레이저 증착법으로 $SrTiO_{3}$(100) 기판위에 제작하였다. STO 기판을 고온 산소열처리로 원시세포 높이의 테라스가 발달한 atomic-flat한 표면상태로 가공하였으며, 이 기판위에 최적의 조건에서 증착된 $YBa_{2}Cu_{3}O_{7}$ 박막은 원시세포단위로 층상으로 적층 성장됨을 알 수 있었다. 이러한 박막은 임계온도${\ge}90$ K, 전이폭${\le}0.6$ K, 상온비저항${\sim}300{\mu}{\Omega}cm$, 잔류저항${\sim}0$ 및 임계전류밀도${\sim}4.6{\times}10^{6}A/cm^{2} $의 초전도 특성을 나타내었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.57-59
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• 2004

The melting temperature and critical temperature (Tc) of YBa$_2$Cu$_3$Ox with deferent content impurities of PbO and BaPbO$_3$ were studied. When the PbO was used as addition in YBa$_2$Cu$_3$Ox, although the melting point could be reduced, the superconductivity (the transition wide, ΔTc) became poor. From the XRD pattern of the sintered mixture of YBa$_2$Cu$_3$Ox and PbO it was known that there is a reaction between YBa$_2$Cu$_3$Ox and PbO, and the product is BaPbO$_3$. In the process of the reaction the superconducting phase of YBa$_2$Cu$_3$Ox was decreased and in the sample BaPbO$_3$became the main phase. Therefore the superconductivity was reduced. BaPbO$_3$was chosen as the impurity for the comparative study. The single phase BaPbO$_3$was synthesized by the simple way from both mixtures of BaPbO$_3$and PbO, BaPbO$_3$and PbO$_2$. Deferent contents of BaPbO$_3$(10%, 20%, 30%) were added in the YBa$_2$Cu$_3$Ox. By the phase analysis in the XRD patterns it was proved that there were not reactions between YBa$_2$Cu$_3$Ox and BaPbO$_3$. When BaPbO$_3$was used as impurity in YBa$_2$Cu$_3$Ox the superconductivity was much better than PbO as impurity in YBa$_2$Cu$_3$Ox But the melting point of YBa$_2$Cu$_3$Ox with BaPbO$_3$could not be found when the temperature was lower than 1000 $^{\circ}C$ in the DTA measurement.

• 한국재료학회지
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• 제32권2호
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• pp.66-71
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• 2022

In this article, Pb₂Ba_1.7Sr_0.3Ca₂Cu₃O_10+δ superconductor material was synthesized using conventional solid-state reaction method. X-ray diffraction (XRD) analysis demonstrated one dominant phase 2223 and some impurities in the product powder. The strongest peaks in the XRD pattern were successfully indexed assuming a pseudo-tetragonal cell with lattice constants of a = 3.732, b = 3.733 and c = 14.75 Å for a Pb-Based compound. The crystallite size and lattice strain between the layers of the studied compound were estimated using several methods, namely the Scherrer, Williamson-Hall (W.H), size-strain plot (SSP) and Halder Wagner (H.W) approach. The values of crystallite size, calculated by Scherrer, W.H, SSP and H.W methods, were 89.4540774, 86.658638, 87.7555823 and 85.470086 Å, respectively. Moreover, the lattice strain values obtained by W.H, SSP and H.W methods were 0.0063240, 0.006325 and 0.006, respectively. It was noted that all crystallite size results are consistent; however, the best method is the size-strain plot because it gave a value of R² approaching one. Furthermore, degree of crystallites was calculated and found to be 59.003321%. Resistivity analysis suggests zero-resistance, which is typical of superconducting materials at critical temperature. Four-probe technique was utilized to measure the critical temperature at onset T_c(onset), zero resistivity T_{c(off set)}, and transition (width ΔT), corresponding to temperatures of 128 K, 116 K, and 12 K, respectively.

• 한국자기학회지
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• 제1권2호
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• pp.15-21
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• 1991

고온초전도체 $Y_{1}Ba_{2}Cu_{3-x}Sn_{x}O_{7-y}$에서 Cu 대신에 Sn 을 치환하면서 이들의 조성변화에 따른 자기적 특성을 vibrating sample magnetometer(VSM)와 torque magnetometer를 이용 하여 측정하였다. Cu 대신에 Fe, Ni 등의 원소를 치환했을 때와는 달리 x=0.36 까지 되어도 초전도 전이온도가 90 K 이상을 나타냄을 알 수 있었다. 온도와 외부자기장에 따른 자기 모우먼트 측정을 통하여 각 조성에 따른 lower critical field ($H_{c1}(T)$)과 upper critical field ($H_{c2}(T)$)를 측정하였다. 이 결과를 이용해 $H_{c1}(0)$과 $H_{c2}(0)$를 계산했으며, 간섭길이 (${\varepsilon}_{0}$), 침투깊이 (${\lambda}_{0}$), Ginzburg-Landau 상수 k등을 얻을 수 있었으며, 시료의 flux pinning 효과도 확인할 수 있었다.

• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국초전도ㆍ저온공학회논문지
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• 제21권3호
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.36-41
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• 2017

The effects of $MgB_4$ addition on the superconducting properties and the microstructure of in situ processed $MgB_2$ bulk superconductors were studied. $MgB_4$ powder of 1-20 wt.% was mixed with (Mg + 2B) powder and then pressed into pellets. The pellets of (Mg + 2B + $xMgB_4$) were heat-treated at $650^{\circ}C$ for 1 h in flowing argon. The powder X-ray diffraction (XRD) analysis for the heat-treated samples showed that the major formed phase in all samples was $MgB_2$ and the minor phases were $MgB_4$ and MgO. The full width at half maximum (FWHM) values showed that the grain size of $MgB_2$ decreased as the amount of $MgB_4$ addition increased. $MgB_4$ particles included in a $MgB_2$ matrix is considered to suppress the grain growth of $MgB_2$. The onset temperatures ($T_{c,onset}$) of $MgB_2$ with $MgB_4$ addition (0-10 wt.%) was between 37-38 K. The 20 wt.% $MgB_4$ addition slightly reduced the $T_{c,onset}$ of $MgB_2$ to 36.5 K. This result indicates that $MgB_4$ addition did not influence the superconducting transition temperature ($T_c$) of $MgB_2$ significantly. On the other hand, the small additions of 1-5 wt.% $MgB_4$ increased the critical current density ($J_c$) of $MgB_2$. The $J_c$ enhancement by $MgB_4$ addition is attributed not only to the grain size refinement but also to the possible flux pinning of $MgB_4$ particles dispersed in a $MgB_2$ matrix.

• 한국결정성장학회지
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• 제21권5호
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• pp.199-204
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• 2011

존멜팅법을 이용해서 $(YSmNd)_{1.8}Ba_{2.4}Cu_{3.4}O_{7-x}$계 고온초전도체를 대기 중에서 용융성장실험을 하였다. 존멜팅법의 최적용융온도는 $1100^{\circ}C$였으며 성장속도는 3.5 mm/h 였다. 한 방향으로 용융성장 된 (YSN)1.8 초전도체는 XRD, 광학현미경, TEM을 이용하여 미세구조를 관찰하였으며 SQUID magnetometer와 직접전류수송법을 이용해 초전도특성을 평가하였다. 특히 용융성장 된 (YSN)1.8 초전도체의 광학현미경에 의한 미세구조 관측 결과 초전도상인 (YSN)123 matrix내에 비초전도상인 (YSN)211 inclusions이 균질하게 분포되어 있는 것이 관측되었다. 또한 용융성장 된 (YSN)1.8 초전도체는 90 K 이상의 임계온도 특성을 보였으며 액체질소 안에서 직접전류수송법으로 측정한 결과 수송전류 830 A에서 $3.93{\times}10^4$(A/$cm^2$)를 갖는 높은 임계전류밀도 특성을 보였다.

• 한국분말재료학회지
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• 제15권3호
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• pp.182-187
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• 2008

Carbon was known to be one of effective additives which can improve the flux pinning of $MgB_2$ at high magnetic fields. In this study, glycerin $(C_3H_8O_3)$ was selected as a chemical carbon source for the improvement of critical current density of $MgB_2$. In order to replace some of boron atoms by carbon atoms, the boron powder was heat-treated with liquid glycerin. The glycerin-treated boron powder was mixed with an appropriate amount of magnesium powder to $MgB_2$ composition and the powder pallets were heat treated at $650^{\circ}C\;and\;900^{\circ}C$ for 30 min in a flowing argon gas. It was found that the superconducting transition temperature $(T_c)$ of $Mg(B_{1-x}C_x)_2$ prepared using glycerin-treated boron powder was 36.6 K, which is slightly smaller than $T_c$(37.1 K) of undoped $MgB_2$. The critical current density $(J_c)$ of $Mg(B_{1-x}C_x)_2$ was higher than that of undoped $MgB_2$ and the $T_c$ improvement effect was more remarkable at higher magnetic fields. The $T_c$, decrease and $J_c$ increase associated with the glycerin treatment for boron powder was explained in terms of the carbon substitution to boron site.