• Title/Summary/Keyword: Superconducting power cable

Search Result 182, Processing Time 0.016 seconds

Manufacturing technology and R&D status of high temperature superconducting wire (고온초전도선재 제초기술과 개발 동향)

  • Oh, S.S.;Ha, D.W.;Ha, H.S.;Park, C.;Song, K.J.;Ko, R.K.;Kwon, Y.K.;Ryu, K.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.67-73
    • /
    • 2002
  • The development of high performance HTS wire is a key factor for various electrical applications of coils and cables. The purpose of this paper is to review and consider the main manufacturing technologies of HTS wire and its current status. A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. According to this, long Bi-2223 wires having Ic of 130 A were recently produced and their mass production has been underway in US. The current status performance of Bi-2223 wire is supposed to be used in power transmission cable because of its lower self-field property. Y-123 second generation conductor is extensively being developed throughout the world and many fabrication processes are competed with each other. 30 m-long Y-123 wire with Ic of 0.8 MA/$\textrm{cm}^2$ was recently fabricated using IBAD and PLD techniques in Japan. This result offers promise of scalable processing of practical multi-layer coated conductor.

  • PDF

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

  • Putri, W.B.K.;Kang, B.;Ranot, M.;Lee, J.H.;Kang, W.N.
    • Progress in Superconductivity and Cryogenics
    • /
    • v.16 no.2
    • /
    • pp.20-23
    • /
    • 2014
  • We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.