• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.97-97
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• 2014

The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.

• 한국재료학회지
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• 제23권11호
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• pp.613-619
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• 2013

$Cu_2ZnSn(S_x,Se_{1-x})_4$ (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from $520^{\circ}C$ to $580^{\circ}C$. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the $Mo(S_x,Se_{1-x})_2$ (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

• Current Photovoltaic Research
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• 제3권1호
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.99.1-99.1
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• 2010

Many efforts on the surface sulfurization of $Cu(InGa)Se_2$ (CIGS)thin films have been reported as techniques to improve CIGS solar cell performance. We have investigated the sulfurization technique using the sulfur vapor. The co-evaporated $Cu(In,Ga)Se_2$ tin film was used for sulfurization. A thin $Cu(In,Ga)(S,Se)_2$ layer was grown on the surface of the CIGS thin film after high-temperature annealing in sulfur vapor. The structural and compositional properties of the thin films were studied by XRD, EDS and AES analysis. The obtained results revealed that the surface modification technique is promising method to S incorporated into CIGS absorber.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

• 한국재료학회지
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• 제25권12호
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• 자원리싸이클링
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• 제28권3호
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• pp.45-52
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• 2019

티타늄 생산 원료로서 $TiO_2$는 천연 일메나이트 광석을 1823 K 이상에서 탄소와 함께 환원 및 산 침출을 통해 티타늄이 풍부한 슬래그로부터 생산할 수 있으나, 공정상 매우 높은 에너지 소비 및 다량의 침출 잔류물을 발생한다. 본 연구에서는 1573 K 이하 온도에서 $Na_2SO_4$에 의해 $FeTiO_3$의 황화 처리를 통해서 철 자원은 FeS 황화물 상으로써 티타늄 자원은 $TiO_2-Na_2O$계 산화물 상으로 분리할 수 있는 반응을 제안한다. 본 연구는 $FeTiO_3$의 황화 처리의 기초 연구로서, FeS 황화물 상과 $TiO_2$계 슬래그 상의 분리성에 미치는 환원 분위기의 영향과 대기 분위기 속에서 반응온도와 Sulfur 비에 따른 Fe, Ti, Na 등의 거동을 조사하였다. 1573 K 및 탄소 포화 조건에서 $FeTiO_3$의 Fe는 Fe-C-S 금속과 일부 FeS로 분리 가능하며, 산화물 내 농도는 4 mass% 정도로 감소하였다. 또한, Sulfur/Fe 비가 높아질수록 자성 분리 후 회수된 산화물의 Fe 농도가 증가하며, 회수된 금속상 내 Fe 농도는 감소하였다.

• 자원리싸이클링
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• 제22권3호
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• pp.57-64
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• 2013

희토류산화물인 $Eu_2O_3$, 우라늄산화물인 $UO_2$ 및 $U_3O_8$, $Eu_2O_3$와 우라늄산화물의 혼합물에 대한 선택적 황화반응을 조사한 후에, $(U,Eu)O_2$ 및 $(U,Eu)_3O_8$와 같은 Eu 고용 우라늄산화물, Eu 고용 우라늄산화물의 고온 산화열처리 상분리 생성물인 Eu 농도가 높은 $(U,Eu)_4O_9$와 $U_3O_8$의 혼합상에 대한 황화반응 특성을 $400-800^{\circ}C$에서 조사하였다. $Eu_2O_3$ 및 우라늄산화물의 혼합물의 경우에는 $450^{\circ}C$에서 Eu와 우라늄 산화물간의 반응이 없이 $Eu_2O_3$만 $Eu_3S_4$로 전환되었다. $(U,Eu)_3O_8$ 및 $(U,Eu)O_2$에서는 반응온도 $600^{\circ}C$까지는 우라늄산화물과 동일한 황화반응 거동을 보였으며, $800^{\circ}C$에서는 Eu 농도가 높은 $(U,Eu)S_x$과 ${\alpha}-US_2$ 상이 생성되었다. 고온 산화열처리 상분리 생성물은 $600^{\circ}C$에서 $(U,Eu)S_x$과 UOS 상이 생성되었다. 상분리 생성물을 환원하여 얻은 Eu 농도가 높은 $(U,Eu)O_2$와 $UO_2$의 혼합상은 $450^{\circ}C$에서 $(U,Eu)O_2$은 산황화물인 (U,Eu)OS로 전환되고 $UO_2$는 반응하지 않았다.