• Korean Journal of Materials Research
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• v.17 no.11
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• pp.618-621
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• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.69-77
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• 2024

Due to the miniaturization and multifunctionality of electronic devices, a surface mount technology in the form of molded interconnect devices (MID), which directly forms electrodes and circuits on the plastic injection parts and mounts components and parts on them, is being introduced to overcome the limitations in the mounting area of electronic components. However, when using plastic injection parts with low thermal stability, there are difficulties in mounting components through the conventional reflow process. In this study, we developed a process that utilizes induction heating, which can selectively heat specific areas or materials, to melt solder and mount components without causing any thermal damage to the plastic. We designed the shape of an induction heating Cu coil that can concentrate the magnetic flux on the area to be heated, and verified the concentration of the magnetic flux and the degree of heating on the pad part through finite element method (FEM). LEDs, capacitors, resistors, and connectors were mounted on a polycarbonate substrate using induction heating to verify the mounting process, and their functionality was confirmed. We presented the applicability of a selective heating process through magnetic induction that can overcome the limitations of the reflow method.

• Journal of computational fluids engineering
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• v.19 no.4
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• pp.1-7
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• 2014

A numerical study of transient conjugate heat transfer on micro heater in a micro-channel substrate under a sinusoidal heat load was conducted. It was found that the time constant is not affected by the maximum heating magnitude of the sinusoidal heat load. However, the time constant increases with low duration of the sinusoidal heating period and low Reynolds number. Moreover, there is a threshold where a heater temperature do not reach to time constant at low thermal diffusivity, low flow rate, and low pulse duration of the sinusoidal heating. The time constant should be considered for transient convective heat transfer under transient sinusoidal heat load in a micro heat sink.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.428-433
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• 2000

The consolidation behavior of multicomponent particles prepared by the flame hydrolysis deposition process is examined to identify the effects of Si substrate temperature. To fabricate multi-component particles, a vapor-phase ternary mixture of $SiCl_4(100 cc/min),\;BCl_3(30cc/min)\;and\;POCl_3,(5cc/min)$ was fed into a coflow diffusion oxy-hydrogen flame burner. The doped silica soot bodies were deposited on silicon substrates under various deposition conditions. The surface temperature of the substrate was measured by an infrared thermometer. Changes in the chemical states of the doped silica soot bodies were examined by FT-IR(Fourier-transformed infrared spectroscopy). The deposited particles on the substrate were heated at $1300^{\circ}C$ for 3h in a furnace at a heating rate of 10K/min. Si-O-B bending peak has been found when surface temperature exceeds $720^{\circ}C$. Correspondingly, the case with substrate temperatures above loot produced good consolidation result.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.5
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• pp.563-572
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• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.999-1003
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• 2009

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.