• Journal of Integrative Natural Science
• /
• v.9 no.4
• /
• pp.223-227
• /
• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1997.10a
• /
• pp.183-190
• /
• 1997

The wear behaviors of $Al_2O_3-40%TiO_2$ deposited on casting aluminum alloy(ASTM A356) by plasma spray against SiC ball have been investigated experimentally. Friction and wear tests are carried out at room temperature. The friction coefficient of $Al_2O_3-40%TiO_2$ coating is lower than that of pure $Al_2O_3$ coating(APS). It is found that low friction correspond to low wear and high friction to high wear in the experimental result. The thickness of $Al_2O_3-40%TiO_2$ coatings indicated the existence of the optimal coating thickness. It is found that a voids and porosities of coating surface result in the crack generated. As the tensile stresses in coating increased with the increased friction coefficient. The columnar grain of coating will be fractured to achieve the critical stress. It is found that the cohesive of splats and the porosity of surface play a role in wear characteristics. It is suggested that the mismatch of thermal expansion of substrate and coating play an important role in wear performance. Tensile and compressire under thermo-mechanical stress may be occurred by the mismatch between thermal expansion of substrate and coating. This crack propagation above interface is observed in SEM.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.3
• /
• pp.159-163
• /
• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.455-458
• /
• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.151-154
• /
• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Journal of Welding and Joining
• /
• v.19 no.3
• /
• pp.305-310
• /
• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Journal of Surface Science and Engineering
• /
• v.27 no.3
• /
• pp.158-165
• /
• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.8
• /
• pp.319-324
• /
• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.103-106
• /
• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• ETRI Journal
• /
• v.33 no.3
• /
• pp.335-343
• /
• 2011

The pad pitch of modern radio frequency integrated circuits is in the order of few tens of micrometers. Connecting a large number of high-speed I/Os to the outside world with good signal fidelity at low cost is an extremely challenging task. To cope with this requirement, we need reflection-free transmission lines from an on-chip pad to on-board SMA connectors. Such a transmission line is very hard to design due to the difference in on-chip and on-board feature size and the requirement for extremely large bandwidth. In this paper, we propose the use of narrow tracks close to chip and wide tracks away from the chip. This narrow-to-wide transition in width results in impedance discontinuity. A step change in substrate thickness is utilized to cancel the effect of the width discontinuity, thus achieving a reflection-free microstrip. To verify the concept, several microstrips were designed on multilayer FR4 PCB without any additional manufacturing steps. The TDR measurements reveal that the impedance variation is less than 3 ${\Omega}$ for a 50 ${\Omega}$ microstrip and S11 better than -9 dB for the frequency range 1 GHz to 6 GHz when the width changes from 165 ${\mu}m$ to 940 ${\mu}m$, and substrate thickness changes from 100 ${\mu}m$ to 500 ${\mu}m$.