• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.77-78
• /
• 2006

In order to increase the efficiency of LED, transparent electrodes should be also developed. also suitable anti-reflection coating (ARC) is necessary for practical device applications. In our paper, Al-doped ZnO (AZO) films were fabricated by sputtering on GaP substrate(wavelength:620nm). Choosing optimum substrate temperature and sputtering rate, high quality AZO films were formed. We confirmed that the surface and electrical properties, which implemented using the methods of AFM, Hall measurement. The properties of AZO thin films especially depended on the thickness. We presumed that the change of the increase the external quantum efficiency of LED according to the AZO thin film of thickness.

• Macromolecular Research
• /
• v.10 no.2
• /
• pp.67-74
• /
• 2002

New immunoprotecting membranes were prepared by spin coating the amphiphilic random multiblock copolymers of poly(ethylene glycol) (PEG) and poly(tetramethylene ether glycol) (PTMEG) or poly(dimethyl siloxane) (PDMS) on porous Durapore(R) membrane. The copolymer coating was intended to make a biocompatible, immunoprotecting diffusional barrier and the supporting porous substrate was for mechanical stability and processability. By filling Durapore(R) membrane pores with water, the penetration of coating solution into the pores was minimized during the spin coating process. A single coating process produced a completely covered thin surface layer (~1 ${\mu}{\textrm}{m}$ in thickness) on the porous substrate membrane. The permselectivity of the coated layer was influenced by PEG block length, polymer composition, and thickness of the coating layer. A composite membrane with the coating layer prepared with PEG 2 K/PTMEG 2 K block copolymer showed that its molecular weight cut-of fat any 40 based on dextran was close to the molecular size of IgG (Mw = 150 kDa). However, IgG permeation was detected from protein permeation test, while glucose oxidase (Mw = 186 kDa) was not permeable through the coated membrane.

• Korean Journal of Materials Research
• /
• v.13 no.5
• /
• pp.309-312
• /
• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

• Journal of the Korean Ceramic Society
• /
• v.44 no.12
• /
• pp.733-739
• /
• 2007

NiO-YSZ anode-supported single cell was prepared by spin-coating YSZ and LSM slurries as electrolyte and cathode, respectively. Dense YSZ electrolyte film was successfully prepared on the porous NiO-YSZ anode substrate by tuning pre-sintering temperature of NiO-YSZ and co-firing temperature. The thickness of YSZ film was controlled by the solid content of slurry and coating cycles. The experimental conditions affecting on the thickness of YSZ film was discussed. Single cells with the active electrode area ${\sim}0.8\;cm^2$ were prepared by spin-coating the cathode layers of LSM-YSZ mixture and LSM consequently as well. The effects of the pre-sintering temperature and thus the microstructure of NiO-YSZ substrate on the current-voltage characteristics of co-fired cell were investigated.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.429-435
• /
• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.912-915
• /
• 2004

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.81-85
• /
• 2017

$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.13 no.3
• /
• pp.22-27
• /
• 1976

For linear IC design, one has to know the epi thickness, resistivity, and structure of buried island inserted between epi and substrate because the mask structure can only be changed for linear IC consisted of various type of transistors to be made for desired specific function. The interrelation of IC operational and saturation voltages with epi resistivity, theckness and divice structure are studied and presented in graphic forms so that IC design engineers can utilize them.

• Journal of the Semiconductor & Display Technology
• /
• v.5 no.1 s.14
• /
• pp.13-16
• /
• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Journal of Magnetics
• /
• v.19 no.3
• /
• pp.227-231
• /
• 2014

We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.