• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.75.1-75.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.7.1-7.1
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• 2008

• Advances in nano research
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• v.1 no.4
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• pp.219-228
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• 2013

We report on the preparation of iron pyrite ($FeS_2$) using pulsed electron ablation of two targets, namely, a mixture of sulfur and iron compound target, and a natural iron pyrite target. Thin films of around 50 nm in thickness have been deposited on glass substrates under Argon background gas at 3 mTorr, and at a substrate temperature of up to $450^{\circ}C$. The thin films have been analyzed chemically and examined structurally using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and visible Raman spectroscopy. The morphology and thickness of the films have been assessed using scanning electron microscopy (SEM) and visible spectroscopic reflectance. The preliminary findings, using a synthetic target, show the presence of iron pyrite with increasing proportion as substrate temperature is increased from $150^{\circ}C$ to $250^{\circ}C$. The data have not shown any evidence of pyrite in the deposited films from a natural target.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.3
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• pp.445-450
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• 2017

In this paper, the directional coupler with half-power division is designed and fabricated by using the vertical coupling structure based on the CPW transmission-line. Even-mode and odd-mode of the vertical coupling structure can be analyzed by the conventional CPW-line and the CBCPW-line, respectively, with half thickness of the substrate. The directional coupler is designed by using the tefron substrate with the dielectric constant of 2.55 and the thickness of 0.76mm. Manufactured directional coupler has the center frequency of 2.45 GHz and the bandwidth of 66.1%. Also, the return loss and isolation are 19.52dB and 19.47dB, respectively, at the center frequency.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.56-61
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• 2018

In this study, CIGS absorber layers were deposited on low-alkali glass and sodalime glass substrates and potasium floride (KF) of various thicknesses was supplied at an elevated temperature after the CIGS growth. The effect of KF post-deposition treatment on the two types of substrates was extremely different. On the low-alkali substrate, the open-circuit voltage (Voc) was improved but the fill-factor (FF) degradation was severe, whereas the sodalime substrate showed Voc deterioration and FF improvement. In the case of supplying 20 nm of KF on both substrates, the efficiency gain of 0.3~1.1%p was obtained. With increasing the KF thickness, a small protrusion-like microstructure developed on the surface of the absorber layer, and the microstructures that were not removed in the subsequent process were found to be the main cause of the FF loss.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.280-284
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• 2015

Au doped $TiO_2$ nanoparticles have been synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Au doped $TiO_2$ was coated with glass substrate. The size of the particles and thickness of the coating can be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TTIP within the micro-emulsion. The average size of synthesized Au doped $TiO_2$ nanoparticle was about in the size range of 15 to 25 nm and the Au particles formed mainly the range of 2 to 10 nm in diameter. The effect of synthesis parameters, such as the molar ratio of water to TTIP and the molar ratio of water to surfactant, are discussed. The synthesized nanopaticles were coated on glass substrate by a spin coating process. The thickness of thin film was about 80 nm. The degradation of MB on a $TiO_2$ thin film was enhanced over 20 % efficiency by the incorporation of Au.

• Laser Solutions
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• v.1 no.1
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• pp.4-10
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• 1998

A basic research for tailored blank welding between mild steel and Zn-coated steel was carried out with $CO_2$ laser beam. The materials used in this work were low carbon steel sheet with a thickness of 1.2mm and Zn-coated steel sheet with the same thickness and 6.3$\mu$m Zn coating. Experiments were carried out by applying the Taguchi method in order to obtain optimized conditions for the application of tailored blank laser welding method in practical manufacturing process. Optical microscopy, XRD, SEM and TEM analysis were performed to observe microstructures and to determine the solidification mode of welded zone. Also mechanical properties were measured by microhardness test tensile test and Erichsen test in order to evaluate the formability of welded specimen. There was no trapped Zn in the fusion zone, and the phases in this region consisted of polygonal ferrite, quasi-polygonal ferrite, banitic ferrite and martensite. The elongation value of welded specimen was more than 80% of that value in the substrate and LDH value was more than 90% of that value in the substrate metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.499-502
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1345_1346
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on glass substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100~350 W in the steps of 50 W on structural, electrical and optical properties of AZO films. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant about 150 nm on glass substrate. The grain size of AZO films figured out X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated Hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.