• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.5
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• pp.514-523
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• 2004

Statement of problem: All-ceramic restorations have been advocated for superior esthetics. Various post and core systems have been used to improve the strength of damaged teeth, but it is unclear whether they affect the final shade of finished all-ceramic restorations. Purpose: The influence of different types of post and core systems on light transmission through all-ceramic crowns was assessed by spectrophotometric analysis. Also the masking effect of different thickness of ceramic ingot was evaluated. Material and Methods : Forty-five sample disks (15mm in diameter) at several thickness(1.0, 1.5, 2.0mm) and value(shade 100, 200, 300) were made in heat pressed ceramic(IPS-Empress). Background specimens simulating gold-alloy cast posts(Type III casting gold alloy), metal posts(Ni-Cr casting alloy) and ceramic posts(CosmoPost) were fabrica-ted. Resin composite(Z250, A3 shade) was used as a tooth substrate reference. For each combination, the change in color was measured with a spectrophotometer. Readings were performed for 2 conditions (1) ability of ceramic to mask the core in relation to its thickness(1.0, 1.5, or 2.0mm) ; (2) influence of post and core types on the final color of the ceramic. Data were recorded according to the CIE $L^*a^*b^*$ systems and color difference($\Delta$E) was calculated. Results: 100 shade ingot: when ceramic thickness was 1.0mm, $\Delta$E value for ceramic post larger than 1 but $\Delta$E value for metal and gold post was larger than 2. For ceramic thickness of 1.5mm, only $\Delta$E value for metal was larger than 2, and the other samples' $\Delta$E value was smaller than 2. For ceramic thickness of 2.0mm, $\Delta$E values for all specimens was smaller than 2. 200 shade ingot: when ceramic thickness was 1.0mm, $\Delta$E value for ceramic post was smaller than 1 but $\Delta$E value for metal and gold post was larger than 2. For ceramic thickness of 1.5 mm, only the $\Delta$E value for metal was larger than 2, and the other samples' $\Delta$E value was smaller than 2. For ceramic thickness of 2.0mm, $\Delta$E values for all specimens was smaller than 1. 300 shade ingot: when ceramic thickness was 1.0mm, only $\Delta$E value for metal was larger than 2 and the other samples' $\Delta$E value was smaller than 2. For ceramic thickness of 1.5mm, $\Delta$E values for all specimens was smaller than 1. For ceramic thickness of 2.0mm, $\Delta$E values for all specimens was smaller than 1. Conclusion: The final esthetic result of the IPS-Empress glass-ceramic restoration was not affected by the presence of different core materials when the thickness was more than 2.0 mm. When ceramic thickness decreases to 1.5mm, it is advised to take the substrate aspects into consideration. If the ceramic thickness is less than 1.0mm, using the tooth color matched substrate is strongly recommended.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Current Optics and Photonics
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• v.1 no.5
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Proceedings of the KWS Conference
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• 2000.04a
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• pp.228-231
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• 2000

Based on the principle of complementary energy an analytical method is developed for determining thermal stress distribution in an thermal barrier coating. This method gives the stress distributions which satisfy the stress-free boundary conditions at the edge. Numerical examples are given in order to verify the method and to investigate the thickness effects of the ZrO$_2$-8wt％Y$_2$O$_3$ top coat on the integrity of thermal barrier coating consisted of IN738LC substrate and MCrAlY bond coat.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.1236-1243
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• 1995

The propagation characteristics of the symmetric and the asymmetric shielded coplanar waveguide with finite metallization thickness is analyzed by boundary integral method employing the equivalence principle. Since the Green's function and the basis functions are composed of sinusoidal functions, the integration in Galerkin's method is solved analytically. The propagation constants of the fundamental and the first higher order mode are obtained and the effects of strip thickness, substrate permittivity, and the asymmetry of the structure are calculated.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.223-225
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• 2004

Based on the principle of complementary energy an analytical method is developed for determining thermal stress distribution in an thermal barrier coating. This method gives the stress distributions which satisfy the stress-free boundary conditions at the edge. Numerical examples are given in order to verify the method and to investigate the thickness effects of the ZrO$_2$-8wt%Y$_2$O$_3$ top coat on the integrity of thermal barrier coating consisted of IN738LC substrate and MCrAlY bond coat.

• Journal of Integrative Natural Science
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• v.4 no.1
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• pp.1-6
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• 2011

The properties of porous silicon, such as substrate properties, porosity, thickness, refractive index, surface area, and optical properties of porous silicon were reviewed. Some properties, such as porosity, refractive index, thickness, pore diameter, multi-structures, and optical properties, are strongly dependent on the anodization process parameters. These parameters include HF concentration, current density, anodization time, and silicon wafer type and resistivity.