• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.96-99
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• 2019

Atomic layer etching (ALE) is one of the most promising techniques in the semiconductor industry. Since ALE has to be precisely controlled on the angstrom scale to achieve ideal results, an in-situ analysis of the processes is highly required. In this regard, we found during ALE experiments with in-situ monitoring with an ellipsometer that changes in the substrate temperature affected the refractive index of a material, leading to changes in measured film thickness. In addition, more ideal ALE results could be achieved by keeping the substrate temperature constant.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.9
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• pp.877-880
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• 2009

A curing process in post-printing section of R2R process is required for an electrical property of the printed pattern when devices such as RFID, Solar cell are printed. PEN as well as heat-stabilized PET which is used as a plastic substrate would be deformed at high temperature due to change of its elastic modulus. And crack in the printed pattern, which is on the plastic substrate is occurred due to the deformation of the substrate. The occurrence of crack causes electrical resistance to increase and the quality of the device to deteriorate. In case of RFID antenna, the range of reading distance is shortened as the electrical resistance of the antenna is increased. Therefore, the deformation of the plastic substrate, which causes the occurrence of crack, should be minimized by setting up low operating tension in R2R process. In low tension, slippage between a moving substrate and a roller would be generated when the operating speed is increased. And scratch would be occurred when slippage is generated due to an air entrainment, which is related to the thickness of the air film. The thickness of the air film is increased when operating speed is increased as shown by simulation based on mathematical model. The occurrence of scratch in conductive pattern printed by roll to roll process is a critical damage because it causes degradation or failure of electrical property of it.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.1912-1915
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• 2007

The disjoining pressure is critical in modeling the transport phenomena in small scales. They are very useful in characterizing the non-continuum effects that are not negligible in heat and mass transports in the film of less than submicro-scales. We present he disjoining pressure of thin film absorbed on solid substrate using Molecular Dynamics Simulation (MD). The disjoining pressure with respect to the film thickness is accurately calculated in the resolution of a molecular scale. The characteristics of the pressure are discussed regarding the molecular nature of the fluid system like molecular diameter and intermolecular interaction. Also, the MD results are compared with those based on the macroscopic approximation of the slab-like density profile. Significant discrepancy is observed when the effective film thickness is less than several molecular diameter

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.125-125
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• 2009

In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.

• Corrosion Science and Technology
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• v.13 no.4
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• pp.125-129
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• 2014

Shinning spot defects on galvanized steel sheets were studied by optical microscope, scanning electron microscope(SEM), Energy Dispersive Spectrometer (EDS) and Laser-Induced Breakdown Spectroscopy Original Position Statistic Distribution Analysis (LIBSOPA) in this study. The research shows that the coating thickness of shinning spot defects which caused by the substrate defect is much lower than normal area, and when skin passed, the shinning spot defect area can not touch with skin pass roll which result in the surface of shinning spot is flat while normal area is rough. The different coating morphologies have different effects on the reflection of light, which cause the shinning spot defects more brighter than normal area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.