• BMB Reports
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• v.32 no.3
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• pp.226-231
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• 1999

In vitro effects of acetone on cytochrome P450 (P450)-dependent benzo(a)pyrene (B(a)P) hydroxylation supported by cumene hydroperoxide (CuOOH) or NADPH/$O_2 $ systems were studied using 3-methylcholanthrene-pretreated rat liver microsomes. The maximal rate of B(a)P hydroxylation at constant concentration ($80\;{\mu}M)$ of the substrate was observed in the presence of $30\;{\mu}M$ CuOOH. However, at concentrations higher than $30\;{\mu}M$ CuOOH the hydroxylation rates were rapidly decreased. In contrast to CuOOH, at a concentration of $200\;{\mu}M$ NADPH, B(a)P hydroxylation rate reached a plateau. At concentrations higher than $200\;{\mu}M$ NADPH, the rates of substrate hydroxylation were maintained at the maximal rate with no inhibition. Acetone at 1% (v/v) enhanced both CuOOH- and NADPH/$O_2$-supported B(a)P hydroxylation at the optimal concentrations of the cofactors. At concentrations higher than 1% (v/v) acetone, substrate hydroxylation was sterero specific under the support of these two cofactors; it was strongly enhanced with $30\;{\mu}M$ CuOOH, but rather inhibited in the $200\;{\mu}M$> NADPH/$0_2 $ system. The lipid peroxidation rate induced during CuOOH-supported P450-dependent B(a)P hydroxylation was increased as CuOOH concentrations were increased. Acetone in the concentration range of 2.5~7.5%(v/v) inhibited lipid peroxidation during CuOOH supported B(a)P hydroxylation. The finding that CuOOH-supported B(a)P hydroxylation is greatly enhanced by acetone suggests that acetone may contribute more to the activation of oxygen (for the insertion of oxygen into the substrate) in the presence of CuOOH than with NADPH/$O_2$. Acetone may also contribute to the partial inhibition of destruction of microsomal membranes by lipid peroxidation.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.277-284
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The Ni layer on the $SiO_2$ substrate was used as a catalyst for the formation of the carbon coils. The characteristics (formation densities, morphologies, and geometries) of the as-grown carbon coils on the substrate with or without the $H_2$ plasma pretreatment process were investigated. By the relatively short time (1 minute) $H_2$ plasma pretreatment on the Ni catalyst layered-substrate prior to the carbon coils synthesis reaction, the dominant formation of the carbon microcoils on the substrate could be achieved. After the relatively long time (30 minutes) $H_2$ plasma pretreatment process, on the other hand, we could obtain the noble-shaped geometrical nanostructures, namely the formation of the numerous carbon nanocoils along the growth of the carbon microcoils. This noble-shaped geometrical nanostructure seemed to play a promising role as the good catalyst support for holding the very tiny Ni catalyst grains.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.105-109
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• 2007

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.1
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• pp.23-28
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• 2010

The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

• Progress in Superconductivity
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• v.6 no.1
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• pp.64-68
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• 2004

We fabricated cube-textured Ni and Ni-W alloy substrates for coated conductors and characterized the effects of W addition on microstructure, mechanical strength, and magnetic properties of the substrate. Pure Ni and Ni-(2, 3, 5at.%)W alloys were prepared by plasma arc melting, heavily cold rolled and then annealed at various temperatures of $600-1300^{\circ}C$. The texture was evaluated by pole-figure and orientation distribution function (ODF) analysis. Mechanical properties were investigated by micro Vickers hardness and tension test. Ferromagnetism of the substrate was measured by physical property measurement system (PPMS). It was observed that Ni-W substrates had sharp cube texture, and the full-width at half-maximums (FWHMs) of in-plane texture was $^{\circ}$-5.57$4.42^{\circ}$, which is better than that of pure Ni substrate. In addition cube texture of Ni-W substrates was retained at higher temperature up to $1300^{\circ}C$. Microstructural observation showed that the Ni-W substrates had fine grain size and higher mechanical properties than the pure Ni substrate. These improvements are probably due to strengthening mechanisms such as solid solution hardening and/or grain size strengthening. PPMS analysis showed that addition of W effectively reduced saturation magnetization in applied magnetic field and Curie temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.163-171
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• 1997

CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from $60{\Omega}cm$ for $25^{\circ}C$ to $2{\times}10^{4}{\Omega}cm$ for $300^{\circ}C$. The optical transmittance at the substrate temperature of $25^{\circ}C$ was about 80% in the the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.187-191
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• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• Journal of Surface Science and Engineering
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• v.46 no.4
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• pp.139-144
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• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.

• Progress in Superconductivity
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• v.7 no.2
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.