• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Structural Engineering and Mechanics
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• v.74 no.2
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• pp.215-225
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• 2020

Thin films easily wrinkle under compressive loading due to their small bending stiffness resulting from their tiny thickness. For a thin film deposited on a functionally graded substrate with non-uniform stiffness exponentially changes along the length span in this paper, the uniaxial wrinkling problem is solved analytically in terms of hyper-Bessel functions. For infinite, semi-infinite and finite length systems the wrinkling load and wrinkling wavenumber are determined and compared with those in literature. In comparison with a homogeneous substrate-bounded film in which the wrinkling pattern is uniform along the length span, for a functionally graded substrate-film system the wrinkles accumulate around the softer location of the functionally graded substrate. Therefore, the effective length of the film influenced by the wrinkles decreases, the amplitude of the wrinkles on softer regions of the functionally graded substrate grows and the wrinkling load of the functionally graded substrates with higher softening rate decreases more. The results of the current research are expected to be useful in science and technology of thin films and wrinkling of the structures especially living tissues.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• Journal of the Korean Institute of Landscape Architecture
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• v.31 no.2
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• pp.102-112
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• 2003

This study was carried out to research and develop a shallow green rooftop system which would require low maintenance and therefore could be used for existing rooftops. To achieve these goals, the conceptual model was induced by past studies and the experimental systems were deduced from the conceptual model. On the growth of Sedum sarmentosum grown in these rooftop systems, the effects of artificial substrate type, soil depth, and drainage type were investigated from 3 April to 11 October 2002. Artificial substrates were an alone type and a blending type. The alone type was an artificial substrate formulated by blending crushed porous glass with bark(v/v, 6:4). The blending type was formulated by blending the alone type with loam(v/v, 1:1). Soil depths were 5cm, loom, and 15cm. Drainage types were a reservoir-drainage type and a drainage type. The reservoir-drainage type could keep water and drain excessive water at the same time. The drainage type could drain excessive water but could not keep water. Covering area, total fresh and dry weight, visual quality, and water content per 1g dry matter were measured. All the variables were analyzed by correlation analysis and factor analysis. The results of the study are summarized as follows. The growth increment was higher in the blending type than in the alone type, the highest in loom soil depth and higher in the reservoir-drainage type than in the drainage type. The growth quality was higher in the blending type than in the alone type, the highest in l0cm soil depth, and higher in the drainage type than in the reservoir-drainage type. In consideration of the permissible load on the existing rooftops and the effects of the treatments on the growth increment and quality, the system should adopt the blending type in artificial substrate types, 5~10cm in soil depths, and the drainage type in drainage types. This system will be well-suited to the growth of Sedum sarmentosum, and when the artificial substrate was in field capacity, the weight will be 75~115kg/$m^2$.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2002.06a
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• pp.195-199
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• 2002

This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.14-19
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• 1999

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• Bulletin of the Korean Chemical Society
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• v.19 no.7
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• pp.743-746
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• 1998

The Belousov-Zhabotinskii (BZ) reaction, which is composed of a bromate-organic acid-metal catalyst and an acidic solution is a commonly employed chemical oscillating reaction system. Cyclohexanedione (CHD) has been used as an initial organic substrate in oscillation systems. We studied each system of 1,4-CHD/BrO3-/Ce4/H+ and 1,3-CHD/BrO3-/Ce4+/H+ oscillating reactions, and studied the control of oscillating characters in a CHD/BrO3-/Ce4+/H+ batch system using a mixed substrate of 1,4-CHD and 1,3-CHD under a fixed total CHD concentration. In the mixed reactions, 1,4-CHD was used as a main substrate and small amounts of 1,3-CHD were used in order to vary the oscillatory behaviours by changing the mixing amount ratio of two substrates.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.81-87
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• 1993

The growth thickness uniformity of epitaxial layers deposited using a moiecular beam epitaxy system is calculated from the arrangement of molecular beam source and the substrate and the geometric dimensions of the crucible in order to predict the optimum design conditions of the prototype MBE system. The thickness uniformity better than 5% over a 3-inch wafer can be obtained by keeping the distance between the substrate and the crucible's orifice longer than 20cm, the tapering angle of the crucible larger than 6$^{\circ}$, and the angle between the normal to the substrate at the center and the crucible axis as larger as possible. In addition, the growth yield decreases to below 51% as the distance between the substrate and the orifice becomes longer than 25cm.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.179-186
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• 2014

Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.433-437
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• 2000

We fabricated switch module of ATM(Asynchronous Transfer Mode) exchange system with MCM-C(MultiChip Module Co-fired) technology and measured its electrical characteristics. Green tape was used as substrate and Au/Ag paste was used to form the interconnect layers. The via holes were made by drill and filled with metal paste usign screen method. After manufacturing the substrate, chips and passive components were assembled on the substrate. In electrical test, the module showed the output signal of 46.9MHz synchronized with input signal. In the view of substrate size reduction, the area of MCM switch module was 35% of conventional hybrid switch module.