• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.1-5
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• 2008

There is a need to enlarge the mother glass substrate in OLED to raise its productivity and to realize OLED TV. On the other hand, some difficulties may arise regarding the deflection of a large glass substrate during its handling operation due to its thinness $(0.5\sim0.7t)$, which is not even enough to allow it to stand its own mass. This thesis proposes a conceptual plan for the application of the clamping- and bending-end conditions to the glass substrate handler. To verify proposed plan, the non-contact 3 dimensional measuring instrument is developed. The composition of the 3 dimensional measuring instrument measures shape of the product using X-Y stage robot and laser distance sensor. X-Y stage robot and laser distance sensor are controlled by LabVIEW language. To calibrate measuring instrument, the direction conversion of the Euler angle was used. In order to confirm deflection of the glass substrate, the experiment was carried out at the bending end boundary condition and the proposed effect was verified.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.1
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.103-109
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• 2010

An ink transfer is modeled and experimentally verified using roll-to-roll electric direct gravure printing process. The ink transfer model based on the physical mechanism for the maximum ink transfer rate is proposed, and experimented by the electric printing machine in FDRC for the relations of the maximum ink transfer rates to the printing pressure, the operating speed, the operating tension, the surface roughness of substrates, and the contact angle between substrate and silver ink. The free ink split coefficient and immobilized ink under the maximum ink transfer rate are calculated by the physical parameter in a printing process and contact angle between substrates and ink. Numerical simulations and experimental studies were carried out to verify performances of the proposed ink transfer model. Results showed that the proposed ink transfer model was effective for the prediction of the amount of transferred ink to the substrate in a direct gravure printing systems.

• Journal of Surface Science and Engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of Bio-Environment Control
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• v.7 no.2
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• pp.116-122
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• 1998

This study was conducted to investigate growth and flowering of hydroponically-grown carnation as affected by substrate and planting date, Three substrates, coir, perlite, and coir＋perlite(1：1. v/v), and two planting dates. May 1 and September 1 were used. Plant height and stem diameter at harvesting time of cut flowers were greater for the September 1 planting than for the May 1 planting. The plants planted on May 1 produced flowers with weak stems and short stem lengths. In addition, flower weight and blossom width were gloater for the September 1 planting than for the Mar 1 planting. The planting date had no significant effect on the number of petals, The carnation planted on May 1 flowered 50 days earlier compared to those Planted on September 1. Plant height and number of petals were the greatest in the plot of coir substrate. The results indicated that for commercial production of cut carnations in a hydroponic system, planting on September 1 is better than May 1. In addition. the results confirm that coir is the superior substrate for the production of cut carnations in a hydroponic system compared to either Perlite or coir＋perlite mixture.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.554-560
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• 2005

The engineering ceramic needs the properties of high strength, hardness, corrosion-resistance and heat-resistance in order to withstand thermal shock or applied nonuniform stresses without failure. The densely coated porous ceramics can be used for machine component, electromagnetic component, bio-system component and energy-system component by their high-performances from superior coating properties and light-weight characteristics due to the structure including pore by itself. In this study we controlled the porosity of silica and alumina, $8.2\~25.4\%$ and $23.4\~36.0\%$, respectively, by the control of sintering temperature and starting powder size. We made bilayer structures, consisting of a transparent glass coating layer bonded to a thick substrate of different porous ceramics by a thin layer of epoxy adhesive, facilitated observations of crack initiation and propagation. The elastic modulus mismatch could be controlled using different porous ceramics as the substrate layer. Then we applied 150 N force using WC sphere with a radius of 3.18 mm by Hertzian indentation. As a result, the crack initiation in the coating layer was delayed at lower porosity in the substrate layer, and the damage in the coating layer was relatively smaller at the bilayer structure coated on higher elastic substrate.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.63-68
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• 2018

In this paper, We intended to design various things for the realization of SoS(System on Substrate) with SIW in 24GHz ISM 밴드(24-24.25GHz). As part of them, We integrated SIW, transition and MPAA as SoS on the same substrate and investigated its characteristics. We used Rogers Ro4350 with relative permittivity of 3.48 and thickness of 20mil. As results of optimal design, insertion loss of the SIW with 11.55mm length showed 0.32dB and insertion loss of 0.19dB occurred in transition to $50{\Omega}$ microstrip. Characteristics of the MPAA integrated on the same substrate as SoS are very similar to those of stand-alone MPAA. But the integrated MPAA decreased by 0.58dB in gain, which is the sum of SIW insertion loss and transition insertion loss, and by 0.7dB in SLL compared that of stand-alone MPAA. However, the bandwidth was increased by 19.4% as it changed from 670MHz to 800Mhz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.385-390
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• 2013

$(Ga_2O_3)_x(ZnO)_{100-x}$ (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the $Ga_2O_3$ content. The GZO film with an atomic ratio of $Ga_2O_3$ of x= 7 wt.%, shows the lowest resistivity of $7.5{\times}10^{-4}{\Omega}{\cdot}cm$. The GZO films were also prepared at various substrate temperatures from room temperature to $300^{\circ}C$, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of $2.8{\times}10^{-4}{\Omega}{\cdot}cm$ that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of $300^{\circ}C$ by using the FTS.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.