Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Electrical and Optical Properties of Ga-doped ZnO Films Prepared by Using Facing Target Sputtering System

대향 타겟식 스퍼터링 방법에 의해 성막된 Ga-doped ZnO 박막의 전기 광학적 성질

  • Choi, Myung Gyu (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Bae, Kang (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Seo, Sung-Bo (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Kim, Dong-Young (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Kim, Hwa-Min
  • 최명규 (대구가톨릭대학교 전자공학과) ;
  • 배강 (대구가톨릭대학교 전자공학과) ;
  • 서성보 (대구가톨릭대학교 전자공학과) ;
  • 김동영 (대구가톨릭대학교 전자공학과) ;
  • 김화민 (대구가톨릭대학교 에너지신소재공학과)
  • Received : 2013.03.19
  • Accepted : 2013.04.02
  • Published : 2013.05.01
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Abstract

$(Ga_2O_3)_x(ZnO)_{100-x}$ (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the $Ga_2O_3$ content. The GZO film with an atomic ratio of $Ga_2O_3$ of x= 7 wt.%, shows the lowest resistivity of $7.5{\times}10^{-4}{\Omega}{\cdot}cm$. The GZO films were also prepared at various substrate temperatures from room temperature to $300^{\circ}C$, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of $2.8{\times}10^{-4}{\Omega}{\cdot}cm$ that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of $300^{\circ}C$ by using the FTS.

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References

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