• Laser Solutions
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• v.10 no.2
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• pp.5-15
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• 2007

A new printing process for LCD color filter is proposed in this work by using the localized laser heating, which is called laser-induced spray printing (LISP) process. The LISP is a non-contact process, which injects the ink from the donor substrate to the glass substrate by the bubble pressure induced by laser heating. The temperature distribution of the donor substrate is calculated numerically to explain the ink ejection phenomena. The composition of the ink was includes the red pigment, n-butanol, xylene, BCA and epoxy. Experiments were conducted by using the fiber laser system, and the color filter patterns were deposited successfully under the proper laser heating conditions.

• BMB Reports
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• v.53 no.12
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• pp.611-621
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• 2020

Bacterial endoribonuclease toxins belong to a protein family that inhibits bacterial growth by degrading mRNA or rRNA sequences. The toxin genes are organized in pairs with its cognate antitoxins in the chromosome and thus the activities of the toxins are antagonized by antitoxin proteins or RNAs during active translation. In response to a variety of cellular stresses, the endoribonuclease toxins appear to be released from antitoxin molecules via proteolytic cleavage of antitoxin proteins or preferential degradation of antitoxin RNAs and cleave a diverse range of mRNA or rRNA sequences in a sequence-specific or codon-specific manner, resulting in various biological phenomena such as antibiotic tolerance and persister cell formation. Given that substrate specificity of each endoribonuclease toxin is determined by its structure and the composition of active site residues, we summarize the biology, structure, and substrate specificity of the updated bacterial endoribonuclease toxins.

• Journal of Ceramic Processing Research
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• v.17 no.7
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• pp.763-767
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• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.41-45
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• 2006

The study on laser-ablation plasmas has been strongly interested in fundamental aspects of laser-solid interaction and consequent plasma generation. In particular, this plasma has been widely used for the deposition of thin solid films and applied to the semiconductors and insulators. In this paper, we developed and discussed the generation of carbon ablation plasmas emitted by laser radiation on a solid target, graphite. The progress of carbon plasmas by laser-ablation was simulated using Monte-Carlo particle model under the pressures of vacuum, 1 Pa, 10 Pa and 66 Pa. At the results, carbon particles with low energy were deposited on the substrate as the pressure becomes higher. However, there was no difference of deposition distributions of carbon particles on the substrate regardless of the pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.15-19
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.322-325
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• 2003

BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

• Journal of Surface Science and Engineering
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• v.27 no.2
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• pp.99-108
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• 1994

Films of glass-ceramics $Li_2O-Al_2O_3-SiO_2$(LAS)system were prepared on substrate of an iron plate(SCP) by sol-gel technique using metal alkoxide such as Si$(OC_2H_5)_4$,Al$(OC_2H_9)_3$) and Ti$(OC_2H_6)_4$). Sol which was made by means of simple spray coating, on the substrate was hydrolyzed at 75~$80^{\circ}C$ in moisture cabinet (80~90 % humidity) to form the multicomponent gel. The films up to about 0.8~1.0$mu extrm{m}$ in thickness can be obtained by repeating operation, spraylongrightarrowhydrolysis and condensationlongrightarrowdryinglongrightarrowheating and crystallization at $700^{\circ}C$ for 3~5min. The far-infrared radiation spectra of the coated films on substrate were examined by FT-IR and of films was also observed by scanning electron micrograph technique. The thermal evaluation of the gel-film is followed by TG/DTA measurements. The structure evaluation is followedd X-ray diffraction. These results suggest that this process is applicable to far-infrared radiat at thin film technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.