• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.107-110
• /
• 2002

The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

• Journal of the Korean Ceramic Society
• /
• v.42 no.12 s.283
• /
• pp.865-871
• /
• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• Journal of Surface Science and Engineering
• /
• v.39 no.3
• /
• pp.87-92
• /
• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.83-86
• /
• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2005.05a
• /
• pp.3-8
• /
• 2005

We introduced mechanical stimuli and micropatterned substrate with micro fibers to investigate the effects of those on neurite outgrowth along with nerve growth factor (NGF) in vitro. Microfiber substrates were fabricated using an electrospinning process. And PC-12 cells cultured on substrates were simulated with nerver growth factor and laminar flow shear stress in a fluid flow system The results suggest that microfiber substrates and fluid-induced shear stress are promising for simulating neuronal regeneration in a desired direction.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.2
• /
• pp.45-48
• /
• 2011

In this paper, vacancy clustering formation and diffusion of germanium substrate was studied. The analysis method was adopted Monte Carlo method. At temperatures higher than melting point, fewer clusters formed, but there was less variation in the number of clusters than at lower temperatures, as the time increased. Equilibrium diffusivities in the clustering region were $10^2$ lower than those of free vacancies in the initial stage of kinetic lattice Monte Carlo simulations. They were expressed according to three temperature regimes: at temperatures above 1,100 K, at temperatures of 1,100-900 K, and at temperatures below 900 K. The effective mean migration energy, 1.1 eV, closely coincided with that of the 1.0-1.2 eV in experiments.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.35-39
• /
• 1999

The $Li_2O-MgO-MgF_2-SiO_2$glasses with addition of $B_2O_3$ were investigated in order to make glass-ceramics for low temperature firing substrate. Glasses were made by melting at $1450^{\circ}C$ in the electronic furnace and crystallized at $750^{\circ}C$. The crystal phases were polycrystalline of lithium boron fluorphlogopite and lithium fluorhectorite. The crystal shape was chanced to granule type from needle type with increasing $B_2O_3$ content. Average particle size of the glass-ceramics after water swelling was 3.77$\mu\textrm{m}$. The optimum sintering temperature and sintering shrinkage of the substrate were $900^{\circ}C$ and 13.4%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.324-327
• /
• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Proceedings of the Korea Contents Association Conference
• /
• 2008.05a
• /
• pp.595-597
• /
• 2008

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, SEM analyses. C-axis preferred orientation highly depended on RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.69-71
• /
• 2005

In this study, Al doped ZnO(AZO)thin film were prepared on glass substrates by FTS(Facing targets Sputtering) system. We investigated electrical.. optical and structural properties of AZO thin film under the substrate temperature of the R.T. $100^{\circ}C$, $200^{\circ}C$, respectively, From XRD measurements it was found the crystallization of AZO thin film was increased with increasing the substrate temperature.