• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.163-164
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• 2012

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The substrate with oxygen incorporation and the substrate without oxygen incorporation were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of oxygen incorporated substrate, the nanosized carbon coils were prevail on the substrate surface. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values between the substrate with oxygen incorporation and the substrate without oxygen incorporation.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.11-15
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• 2006

Expose equipment system that is used for manufacturing process of Flat Panel Display, is most important equipment in whole process. Expose equipment that is for making pattern of mask on substrate, consists of optical part, stage part and transport part. The stage is an important part that aligns mask and substrate for delivering pattern of mask to substrate exactly. In this paper, control system of expose stage that is able to use mask and substrate of diverse size, with PC controller using GUI interface instead of PLC control system. The existing PLC control system does not have the suitable structure for using mask of diverse size. GUI interface integration control system is based on PC. So it has the advantage of convenient use and active operation. We embodied PLC control system in integration control system based on PC, and verified utility possibility through the standard test course.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.4
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• pp.513-520
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• 2011

The NIL processes have been studied to implement low cost, high throughput and high resolution application. A RNIL(roller NIL) is an alternative approach to flat nanoimprint lithography. RNIL process is necessary to transfer patterns on flexible substrates. Compared with flat NIL, RNIL has the advantages of better uniformity, less pressing force, and the ability to repeat the patterning process continuously on a large substrate. This paper studies the design, construction and verification of a thermal RNIL system. The proposed RNIL system can easily adopt the flat shaped hot plate which is one of the most important technologies for NIL. The NIL system can be used to transfer patterns from a flexible stamp to a flexible substrate, from a flexible stamp to a Si substrate, and from a roller stamp to a flexible substrate, etc. Patterning on flexible substrates is one of the key technologies to produce bendable displays, solar cells and other applications.

• Journal of Power System Engineering
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• v.1 no.1
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• pp.70-79
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• 1997

Ni-base self-fluxing alloy powder particles were flame sprayed onto the SS400 mild steel substrate surface. The effects of both substrate temperature and spraying distance on the splat behavior of sprayed particles were examined. The results obtained are summarized as follows: 1) In the splat behavior of Ni-base self-fulxing alloy particles sprayed onto the SS400 mild steel substrate, splashing was observed under the room temperature condition. On the contrary, it showed circular plate pattern in the substrate temperature range over 373K. 2) It was cleared that there was close relationship between mechanical properties of coating layer and splat behavior of sprayed particles. 3) From the experimental results, optimum spraying conditions showed excellent mechanical properties in the case of Ni-base self fluxing alloy sprayed onto the SS400 mild substrate were 473K of substrate temperature and 250mm of spraying distance.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.112-115
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• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.4
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• pp.414-420
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• 2013

We developed inkjet based measurement system for micro-droplet behavior on a substrate. By using the inkjet dispenser, a droplet, which is as small as few pico-liter in volume, can be jetted and the amount can be controlled. After jetting, the droplet image on the substrate is acquired from side view camera. Then, droplet profile is extracted to measure droplet volume, contact angle and evaporation characteristics. Also top view image of the droplet is acquired for better understanding of droplet shape. The previous contact angle measurement method has limitations since it mainly measures the ratio of height and contact diameter of droplet on a substrate. Unlike previous measurement system, our proposed method has advantages because various behavior of droplet on substrate can be effectively analyzed by extracting the droplet profile.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.10
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• pp.93-99
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• 2010

A nano-stereolithography is the direct patterning process with a nanoscale resolution using twophoton absorption induced by a femtosecond laser. However, in the majority of the works, the fabrication of 3D microstructures have been done only onto transparent glass due to the use of an oil immersion objective lens for achieving a high resolution. In this work, the coaxial illumination and the auto-focusing system are proposed for the direct patterning of nano-precision patterns on an opaque substrate such as a silicon wafer and a metal substrate. Through this work, 3D polymer structures and metallic patterns are fabricated on a silicon wafer using the developed process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.