• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.55-58
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• 2003

We fabricated the textured Ni substrate and evaluated the effects of processing variables on microstructural evolution and texture transformation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(P/M) and plasma arc melting(PAM) The texture of the substrate was characterized by pole-figure and surface condition was evaluated by atomic force microscopy. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 800~120$0^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$~10$^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the FWHMs of in-plane texture was 9$^{\circ}$~13$^{\circ}$ at the temperature range. In addition, twin texture, (221)＜221＞, was formed as the temperature increased further. The grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of environmental and Sanitary engineering
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• v.4 no.1 s.6
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• pp.43-52
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• 1989

A synthetic wastewater composed of powdered baby food and inorganic nutrients was treated by five 3.6L anaerobic reactors in order to test the relationship between solids retention time (SRT) and media surface ratio, and the removal efficiencies of organic substrate. Of the five reactors, four were semi-continuously fed stirred-tank reactors and one continuously-stirred batch reactor. The influent was 7430mg/L in COD, 7120 mg/L $BOD_L$ and 6350mg/L in $BOD_5$, respectively. Operating temperature was $35{\pm}1^{\circ}C$ and pH in the range 6.9 to 7.2. In this experimental study it was found that a linear relationship existed, within the experiment range, between SRT and media surface ratio, and that SRT and removal efficiency increased with increasing media surface ratio. The substrate removal efficiencies were 82.7 to $88.2\%$ in COD, 82.9 to $88.4\%$ in $BOD_L$ and 83.3 to $88.7\%$ in $BOD_5$, respectively.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.355-358
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• 2000

Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400$^{\circ}C$. MR measurement was carried out as a function of angle $\theta$, between external field and current direction. MR ratio increased with increasing substrate temperature, also, max. MR ratio was observed in samples deposited at 300$^{\circ}C$. With increasing upto 400$^{\circ}C$, MR ratio was rapidly decreased in the case of thinner NiFe films. In non-field deposited NiFe films, both angle $\theta$=0, 90。, there was no significant change in MR curves. However, MR curves of in-situ field deposited NiFe films were different in both angles $\theta$=0 and 90。

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.822-825
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• 2006

We propose a transflective In-Plane Switching mode in which patterned retarder is placed only on the reflective area of the upper substrate side. By selecting optic axes of Half Wavelength Plate and Liquid Crystal as 24 and 90 degree with respect to polarizer, condition of low reflectance for visible wavelength range at black state is found.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1240-1241
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• 2008

Superconducting ceramics of YBaCuO was fabricated on SrTiO substrate by chemical fabrication method using fine powder of YBaCuO having diameter less than 1um. The pattern of the fabricated superconducting bulk was linear and the thickness of it can be controlled in the range of 50um. The structure of the surface of film by diffraction pattern and composition. The tape like YBaCuO bulk with width of 10mm was formed on substrate using similar method. Tape like film is expected to utilize as material of superconducting tape.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Journal of Environmental Science International
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• v.3 no.4
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• pp.427-437
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• 1994

Batch experiments were performed to evaluate the effect of sludge acclimation and contact load on the behavior of phosphorus and organic substrates under anaerobic conditions. Four different sludges were acclimated in the sequencing batch reactors operated by intermittent aeration. All the experiments performed in a bench scale have shown the following results: 1. The unreleaseable phosphorus contents for four different sludges are the range of 16 mg P/g SS to 24 mg P/g SS, depending on the sludge acclimation conditions. 2. All the specific substrate uptake rates(SSUR) are expressed in the first order equation for releaseable phosphorus contents. The reaction rate coefficient k, has the values of 4.0, 8.9, and 13.8 mg COD/mg P/hr, depending on the contact load and slut식e species. 3. As reaction proceeds, the ratios of $\delta$P to -$\delta$COD at high contact load are almost constant in the range of 0.10 to 0.14, but at low contact load, they increase from 0.08 to 0.27.