• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.339-342
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• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.595-597
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• 2008

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, SEM analyses. C-axis preferred orientation highly depended on RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Progress in Superconductivity
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• v.5 no.2
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• pp.132-135
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• 2004

We fabricated YBCO thick films by using a screen printing method with $Y_2$BaCuO$_{5}$(Y211) and BaCO$_3$ powders on Cu-substrate in $N_2$ atmosphere. Cu-sheathed YBCO thick film process is more simple and economic than YBCO coated conductor methods. The heat treatment is performed in the range of 860 - 875 $^{\circ}C$ for 5 min in the tube furnace of $N_2$ atmosphere. The flow rate of $N_2$ gas is fixed 60 $m\ell$/min. Microstructure and phases of thick films were investigated by optical microscope, X-ray diffraction(XRD) and SEM. At heat-treatment temperature, the thick films were partially melted by liquid reaction between CuO of oxidized copper substrate and the powders screen-printed on Cu-sheath. During the heat-treatment procedure, YBCO superconducting grains nucleate.e.