• 한국진공학회지
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• 제9권3호
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• pp.254-257
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• 2000

MBE 법으로 GaAs 기판 위에 성장시킨 $Cd_{1-x}Mg_x/Te$ 박막시료를 조성비(x=0, 0.23, 0.43)에 따라 타원편광 분석기로 측정하여 연구하였다. 기존에 보고된 고상시료(bulk)의 결과와 비교한 결과, 첫째 $E_0$ 밴드갭 에너지 아래에서 나타나는 간섭무늬를 확인할 수 있었고, 이는 박막이 투명함을 보여주는 사실이며 그 결과 이번 시료의 우수성을 확인할 수 있었다. 둘째 $E_2$밴드갭 에너지 영역에서 종전의 고상시료에서 측정 발표된 값보다도 매우 높고 명확한 <$\varepsilon_2$> 값이 측정되어, $E_2$와 $E_0$' 밴드갭 에너지가 명확히 분리되는 것을 보았다. 간섭무늬를 제거하기 위해 다층구조계산(multilayer calculation)을 수행하여 x=0.23일 때의 $E_0$ 밴드갭 에너지를 볼 수 있었다.

• 한국재료학회지
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• 제4권7호
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• pp.783-791
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• 1994

rf 마그네트론 스퍼터링법을 이용하여 7059 유리기판 위에 ZnO압전박막을 증착하고, 공정변수인 rf 인가전력, 반응기 압력, $O_{2}$/Ar의 조성비등이 증착되는 박막의 결정성 및 전기적 특성에 미치는 영향을 고찰하였다. 증착된 ZnO박막은 문헌에 보고된 증착속도보다 높은 값(200-1000$\AA$/min)을 가졌으며, XRD(002)피크의 rocking curve 표준편차가 SAW 필터로의 응용이 가능한 $6^{\circ}$미만의 값을 가졌다. $O_{2}$Ar 유입비가 25%이상의 경우에는 매우 높은 저항치를 가짐을 알 수 있었다. ZnO박막의 두께와 파장의 비, $\frac{h}{\lambda}$=0.25인 조건에서 필터를 제조하였다. 측정한 주파수 응답특성과 이론치에 의해 계산한 주파수응답특성은 비교적 잘 일치함을 알 수 있었다. 이때 중심주파수는 39.08MHz였으며, 상속도는 \ulcorner 2501m/sec, 삽입손실은 약 29dB였다.

• 열처리공학회지
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• 제24권6호
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• pp.338-342
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• 2011

Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

• Preventive Nutrition and Food Science
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• 제1권1호
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• pp.111-116
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• 1996

Polyphenol oxidase(PPO) isolated from the crude extract of ascidian, Halocynthia roretzi, showed higher affinity for catechol than tyrosine or DL-DOPA. Successful enzyme assay could be performed at $25^{\circ}C$, 10min. by mixing 0.2ml of crude enzyme extract with 2.8ml of 0.13M catechol in 0.1M sodium phosphate buffer(pH 6.4). The specific activity of PPO which had been purified with a combination of ammonium sulfate treatment, ion exchange chromatography on DEAE-cellulose, and gel filtration on Sepharose 6B was 13-fold disc gel electrophoresis. The activity of PPO was stable from pH 5.0 to 8.0 and showed the peak activity at pH 6.4 .The optimum reaction temperature for PPO oxidation on catechol was 35$^{\circ}C$ and those enzyme were heat stable up to 4$0^{\circ}C$. Molecular weigth of the enzyme was estimated about 170kDa. One molecule was found to be composed of gour subunits. Two of them had molecular weigh of 55kDa and the others 30kDa. The {TEX}$K_{m}${/TEX} values, {TEX}$V_{max}${/TEX} and catalytic efficiency({TEX}$V_{max}${/TEX}/{TEX}$K_{m}${/TEX}) for catechol were 0.12mM, 2.5mM/liter/min. and {TEX}$0.18min^{-1}${/TEX} respectively. The substrate affinity and electrophorectic pattern suggested that the enzyme of ascidian was considered to be not tyosine but catechol oxidase.

• 태양에너지
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• 제11권1호
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• pp.41-49
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• 1991

본 연구에서는 기판의 증착온도를 $200{\pm}5[5^{\circ}C]$로 유지하여 진공증착법으로 (P)SiC/(N)Si 태양전지를 제작하고 그의 특성을 조사하였다. SiC 박막의 최적 두께 $1.2[{\mu}m]$는 박막두께와 변환효율과의 관계로부터 정해졌고 태양전지의 특성은 열치리에 의하여 개선되었다. 최적조건의 열처리 온도와 시간은 $420[^{\circ}C]$에서 12분이고 분광응답의 피크값은 열처리 온도의 증가와 더블어 장파장 쪽으로 이동함을 알았다. X선 회절분석 및 SEM검사는 열처리 온도와 시간에 따라 SiC 박막내에서 결정성장을 보여주며 $2.5{\times}1[cm^2]$의 태양전지에서 최고 변환효율은 11.7[%]이다.

• 한국광학회지
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• 제14권3호
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• pp.266-271
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• 2003

수 $\mu\textrm{m}$ 이상의 두께를 가지는 비교적 두꺼운 박막의 경우 박막에 의한 간섭효과로 인하여 나타나는 반사율 스펙트럼에서의 진동주기로부터 막의 두께를 얻는다. 대개 빠른 데이터 처리를 위해서 고속 푸리에 변환(Fast Fourier Transformation, FFI)을 사용하여 진동주기(또는 진동수)를 구한다. 본 연구에서는 반사율 또는 투과율 스펙트럼을 빛의 에너지 축상에서 푸리에 변환하는 종래의 방법을 개선하여 박막의 굴절률 분산을 반영하는 수정된 고속 푸리에 변환 방법을 최초로 도입하였다. 이 새로운 방법은 굴절률 분산에서 유래하는 유효굴절률 결정에서의 오차를 줄여주고 푸리에 변환 피크의 폭 넓어짐을 막아줌으로써 막 두께 결정의 정밀도를 크게 향상시킨다. 수정된 고속 푸리에 변환방법을 80 $\mu\textrm{m}$의 덮게층과 13 $\mu\textrm{m}$의 사이층이 있는 시료의 반사 스펙트럼에 적용하여 고 타당성을 확인하였다.

• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 소성∙가공
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• 제28권1호
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• 대한금속재료학회지
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• 제48권4호
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• pp.277-288
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• 2010

The hot corrosion properties of heat-resistant steels were investigated in an oxidation atmosphere including artificial ash and sulfur dioxide. The heat-resistant steels of T22, T92, T122, T347HFG, Super304H and HR3C were evaluated at 620, 670 and $720^{\circ}C$ for 400 hours. The relationship between the corrosion rate and the temperature followed a bell-shaped curve with a peak rate at around $670^{\circ}C$. The corrosion rates showed a decreasing tendency as the chrome contents of these steels increased from 2.15 wt.% to 24.5 wt.%, and austenitic steels had a lower corrosion rate than ferritic steels. Sulfidation by $SO_2$ as well as molten salt corrosion also had an effect on the total corrosion rate, especially showing an increase in the corrosion rate in ferritic steels. Regardless of the chrome content in the steels and irrespective of the test temperature, the corrosion scale was composed of an outer oxide and an artificial ash mixed layer, a middle oxide layer and inner sulfide, and a mixed oxide layer. As the chrome content increased, the proportion of chrome oxide in the corrosion scale increased. Before spalling of the corrosion scale, voids and cracks were initiated in the sulfide and the mixed oxide layer or at the interface with the substrate.

• 센서학회지
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• 제30권6호
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• pp.446-450
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• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.