• Journal of Bio-Environment Control
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• v.26 no.4
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• pp.411-417
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• 2017

Environmental and growth factors such as light intensity, vapor pressure deficit, and leaf area index are important variables that can change the transpiration rate of plants. The objective of this study was to compare the transpiration rates estimated by modified Penman-Monteith model and artificial neural network. The transpiration rate of paprika (Capsicum annuum L. cv. Fiesta) was obtained by using the change in substrate weight measured by load cells. Radiation, temperature, relative humidity, and substrate weight were collected every min for 2 months. Since the transpiration rate cannot be accurately estimated with linear equations, a modified Penman-Monteith equation using compensated radiation (Shin et al., 2014) was used. On the other hand, ANN was applied to estimating the transpiration rate. For this purpose, an ANN composed of an input layer using radiation, temperature, relative humidity, leaf area index, and time as input factors and five hidden layers was constructed. The number of perceptons in each hidden layer was 512, which showed the highest accuracy. As a result of validation, $R^2$ values of the modified model and ANN were 0.82 and 0.94, respectively. Therefore, it is concluded that the ANN can estimate the transpiration rate more accurately than the modified model and can be applied to the efficient irrigation strategy in soilless cultures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Membrane Journal
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• v.32 no.6
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• pp.442-455
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• 2022

High-temperature polymer electrolyte membrane fuel cell (HT-PEMFC) has been studied as an alternative to low-temperature PEMFC due to its fast activation of electrodes and high resistance to electrode poisoning by carbon monoxide. It is highly required to develop stable PEMs operating at high temperatures even doped by ion-conducting materials for the development of high-performance and durable HT-PEMFC systems. A number of studies have been conducted to develop polybenzimidazole (PBI)-based PEMs for applications in HT-PEMFC due to their high interaction with doped ion-conducting materials and outstanding thermomechanical stability under high-temperature operation. This review focused on the development of PBI-based PEMs showing high performance and durability. Firstly, the characteristic behavior of PBI-based PEMs doped with various ion-conducting materials including phosphoric acid was systematically investigated. And then, a comparison of the physicochemical properties of the PEMs according to the different membrane manufacturing processes was conducted. Secondly, the incorporation of porous polytetrafluoroethylene substrate and/or inorganic composites to PBI matrix to improve the membrane performances was studied. Finally, the construction of cross-linked structures into PBI-based PEM systems by polymer blending method was introduced to improve the PEM properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.127-133
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• 2012

To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics versus annealing temperature of $Cu_2ZnSnS_4$ which has kesterite structure by substitution low-cost sulfur (S) instead of high-cost selenium (Se). By analyzing XRD patterns, main peak was observed at $2{\theta}=28.5^{\circ}$ when Zn/Sn ratio is 0.8/1.2. And when we observed kesterite structure which has orientation of (112) direction, the more annealing temperature increase the bigger strength of (112) direction is. $Cu_2ZnSnS_4$ thin film showed characteristics of kesterite structure at $550^{\circ}C$. And when we calculated lattice constant, a = 5.5047 and $c=11.014{\AA}$ as same JCPDS (Joint Committee on Powder Standards) data measured. We measured optical transmittance to analyze optical characteristics. Optical transmittance was lower than 65 % at visible ray (${\lambda}=380{\sim}770nm$).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.577-582
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• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.

• Journal of Periodontal and Implant Science
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• v.29 no.1
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• pp.209-231
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• 1999

Even though titanium(Ti) and its alloys are the most used dental implant materials, there are some problems that Ti wears easily and interferes normal osteogenesis due to the metal ions. Ti coated with bioactive ceramics such as hydroxyapatite has also such problems as the exfoliation or resorption of the coated layer, Recent studies on implant materials have been proceeding to improve physical properties of the implant substrate and biocompatibility of the implant surfaces. The purpose of the present study was to examine the physical property and bone tissue compatibility of bioinert nitrides ion plated Ti, Button type specimens(14mm in diameter, 2.32rrun in height) for the abrasion test and cytotoxicity test and thread type implants(3.75mm in diameter, 6mm in length) for the animal experiments were made from Ti(grade 2) and 316LVM stainless steel. Ti specimens were ion plated with TiN, ZrN by the low temperature arc vapor deposition, and the depth profile of the TiN/Ti, ZrN/Ti ion plated surface was examined by Auger Electron Spectroscopy. Three kind of button type specimens .of TiN/Ti, ZrN/Ti and Ti were used for abrasion test, and HEPAlClC7 cells and CCD cells were cultivated for 4 days with the specimens for cytotoxicity test. Thread type implants of TiN/Ti, ZrN/Ti, Ti, 316LVM were implanted on the femur of 6 adult dogs weighing 10kg-13kg. Two dogs were sacrified for histological examination after 45 days and 90 days, and four dogs were sacrified for the removal torque test of the implant') after 90 days. The removal torque force was measured by Autograph (Shimadzu Co., AGS-1000D series, Japan). Abrasion resistance of TiN/Ti was the highest, and that of ZrN/Ti and Ti were followed. The bioinert nitride ion plated Ti had much better abrasion resistance, compared with Ti, In the cytotoxicity test, the number of both cells were increased in all specimens, and there were no significant difference in cytotoxic reaction among all groups (p>0.1), In histological examination, 316LVM showed the soft tissue engagement in interface between the implant and bone, but the other materials after 45 days noted immature new bone formation in the medullary portion along the implant surface, and those after 90 days showed implant support by new bone formation in both the cortical and the medullary portion, The removal torque force of Tilv/Ti showed significantly higher than that of Ti(p(O,05). The difference in removal torque force between TiN/Ti and ZrN/Ti was not significant(p>0.05), and that of 316LVM was lowest among all groups(p<0.05). These results suggest that bioinert nitrides ion plated Ti can resolve the existing problems of Ti and bioactive ceramics, and it may be clinically applicable to human.

• Applied Biological Chemistry
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• v.30 no.4
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• pp.364-370
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• 1987

The $O_2^-$ level of the extract from young rice leaves, which was cold treated for 2 days and then placed at room temperature for a period of time significantly higher than that from tissues untreated. $O_2^-$ level in leaves was practically unchanged during cold treatment for 48 hours. But it started to increase to arrive at maximum in 8 hours, once the plants were placed under room temperature. The abnormal production of $O_2^-$ in mitochondria during postchilling process was interpreted as a biochemical consequence of accumulation of glycolysis product(s) in cytosol and/or NADH in mitochondrial matrix due to disruption of catabolic balance at low temperature. Mitochondria isolated from the chilling injured tissue was found to have lost considerably their respiratory activity. This fact may imply the involvement of intramitochondrial accumulation of $O_2^-$ in the inactivation of electron transport chain system. The observation that mitochondria in the presence of the $O_2^--producing$ enzymatic system (Xanthine/Xanthine oxidase) lost their respiratory activity supports this inference. It was also found in this work that Superoxide dismutase (SOD) is a substrate inducible enzyme, and that SOD is a possible protective agent in plant cell against chilling injury.

• Applied Biological Chemistry
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• v.34 no.2
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• pp.168-173
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• 1991

The uptake of $Mn^{+2}$, a metal cofactor Mn-SOD, by rice seedings resulted in not only a substantial increase in SOD activity in leaf tissues of the plants, but also a significant enhancement of their cold tolerance : the relative extent of the cold tolerance appeared to accord with relative level of the SOD activity. In contrast, $Fe^{+3},\;Cu^{+2}$ and $Zn^{+2}$, which are the cofactors of Fe-SOD and Cu/Zn-SOD, were found to be ineffective for increasing the SOD activity as well as for improving the chilling-resistant capacity of the plants. The results suggest that Mn-SOD, which is most likely induced by its substrate(superoxide) and activated by the presence of $Mn^{+2}$a at high level, is the enzyme acting as an active component of the defense system against low temperature stress in rice plants. In addition, the application of abscisic acid which has been know to protect to some extent certain plants from chilling injury brought about an increase in SOD activity in rice tissues, providing another affirmative information for the crucial role of SOD under the circumstance of cold stress in plants.