• 제목/요약/키워드: Substrate cells temperature

검색결과 258건 처리시간 0.034초

Thermus thermophilus HJ6 유래 내열성 Trehalose Synthase의 유전자 클로닝 및 발현 (Gene Cloning and Expression of Trehalose Synthase from Thermus thermophilus HJ6)

  • 김현정;김한우;전숭종
    • 한국미생물·생명공학회지
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    • 제36권3호
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    • pp.182-188
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    • 2008
  • 내열성 Trehalose synthase를 생산하는 초고온성 균주 HJ6은 일본 Arima 온천수에서 분리하였다. 세포의 길이는 $2{\sim}4\;um$, 직경 0.4 um의 간균으로 생육최적 pH와 온도는 각각 6.5와 $80^{\circ}C$이였다. 분리된 균주의 16s rRNA 염기서열을 분석하고 계통학적으로 분류한 결과, HJ6 균주는 Thermus thermophilus에 속하는 것으로 동정되었다. PCR법을 이용하여 trehalose synthase(TS) 유전자를 클로닝하고 염기서열을 분석한 결과, ORF는 2,898개의 뉴클레오타이드로 구성되고 915개의 아미노산을 암호화하였다. 아마노산 서열을 바탕으로 상동성을 분석한 결과, Thermus caldophilus GK24 유래 TS와 99%, Meiothermus ruber 유래 TS와 83%의 identity를 나타내었다. 이 유전자를 온도감수성 프로모터를 포함하는 pJLA503 벡터를 이용하며 대장군에서 발현하고 정제하여 약 110 kDa 단백질을 얻을 수 있었다. 정제된 효소는 트레할로스 전환활성에 대한 최적 pH가 7.5이고, 최적온도는 $80^{\circ}C$이며, 활성의 반감기는 $90^{\circ}C$에서 40분으로 확인되어 높은 내열성을 가지는 것으로 확인되었다. 본 효소의 트레할로스 최대 전환율은 기질농도 500mM에서 55.7%를 나타내었고, 기질 농도가 증가함에 따라 더불어 증가하였기 때문에 본 효소의 트레할로스 전환율을 기질농도에 의존적인 것으로 생각되었다.

Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

Fabrication of a Cu2ZnSn(S,Se)4 thin film solar cell with 9.24% efficiency from a sputtered metallic precursor by using S and Se pellets

  • 강명길;홍창우;윤재호;곽지혜;안승규;문종하;김진혁
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.86.2-86.2
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    • 2015
  • Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

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Cloning and Expression of a Chitinase Gene from Thermoactinomyces vulgaris KFB-C100

  • Yooh, Ho-Geun;Kim, Hee-Yun;Lim, Young-Hee;Cho, Hong-Yon
    • Journal of Microbiology and Biotechnology
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    • 제8권6호
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    • pp.560-567
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    • 1998
  • We have found that Thermoactinomyces vulgaris KFB-Cl00 produces a chitinase. The optimum temperature and pH of the enzyme activity were $55^{\circ}C$ and 6.5. The enzyme was stable after heat treatment at $80^{\circ}C$ for 30 min and stable in acidic and basic conditions (PH 6.0~11.0). The thermostable endo-chitinase from Thermoactinomyces vulgaris KFB-C100 was cloned into the plasmid pBR322 by using E. coli DH5$\alpha$ as a host strain. The positive clone carrying a recombinant plasmid (PKCHI23) with a 4.1-kb fragment containing the chitinase gene was found. The recombinant plasmid was analyzed to determine the essential region for chitinase activity and obtained a 2.3-kb fragment, which was sub cloned into pTrc99A using the PstI and SalI sites to construct pTrc99A/pKCHI23-3. The resulting plasmid exerted high chitinase activity upon transformation of E. coli XL1-Blue cells. Chitinase was overproduced 14 times more in the clone cells than in the wild-type cells and the enzyme was purified to homogeneity. The purified enzyme showed the similar properties as the native chitinase from T. vulgaris in terms of molecular weight and substrate specificity. The catalytic action of the cloned enzyme was an endo type, producing chitobiose as a major reaction product.

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ITO/p-InP 태양전지 제작 (The fabrication of ITO/p-InP solar cells)

  • 맹경호;김선태;송복신;문동찬
    • E2M - 전기 전자와 첨단 소재
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    • 제7권3호
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    • pp.243-251
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    • 1994
  • ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

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무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성 (Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition)

  • 김은주;김광호;이덕행;정운석;임재홍
    • 한국표면공학회지
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    • 제49권1호
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    • pp.54-61
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    • 2016
  • Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

태양전지용 실리콘 기판의 절삭손상 식각 조건에 의한 곡강도 변화 (Effect of Saw-Damage Etching Conditions on Flexural Strength in Si Wafers for Silicon Solar Cells)

  • 강병준;박성은;이승훈;김현호;신봉걸;권순우;변재원;윤세왕;김동환
    • 한국재료학회지
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    • 제20권11호
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    • pp.617-622
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    • 2010
  • We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

결정질 실리콘 태양전지용 SiNx:H 박막 특성의 최적화 연구 (A Study on the Optimization of the SiNx:H Film for Crystalline Silicon Sloar Cells)

  • 이경동;김영도;;부현필;박성은;탁성주;김동환
    • 한국진공학회지
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    • 제21권1호
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    • pp.29-35
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    • 2012
  • 수소화된 실리콘 질화막은 결정질 태양전지 산업에서 반사방지막과 패시베이션 층으로 널리 사용되고 있다. 또한, 수소화된 질화막은 금속 소성공정과 같은 높은 공정온도를 거친 후에도 결정질 실리콘 태양전지의 표면층으로서 충족되는 특성들이 변하지 않고 유지 되어야 한다. 본 연구에서는 Plasma enhanced chemical vapor deposition 장치를 이용한 수소화된 실리콘 질화막의 특성 변화에 대한 경향성을 알아보기 위하여 증착조건의 변수(온도, 증착거리, 무선주파수 전력, 가스비율 등)들을 다양하게 가변하여 증착조건의 최적화를 찾았다. 이후 수소화된 실리콘 질화막의 전구체가 되는 사일렌($SiH_4$)과 암모니아 ($NH_3$) 가스비를 변화시켜가며 결정질 실리콘 태양전지에 사용되기 위한 박막의 광학 전기 화학적 그리고 표면 패시베이션 특성들을 분석하였다. 가스 비율에 따른 수소화된 실리콘 질화막의 굴절율 범위는 1.90~2.20까지 나타내었다. 결정질 실리콘 태양전지에 사용하기 위한 가장 적합한 특성은 3.6 ($NH_3/SiH_4$)의 가스비율을 나타내었다. 이를 통하여 $156{\times}156mm$ 대면적 결정질 실리콘 태양전지를 제작하여 17.2 %의 변환 효율을 나타내었다.

전기방사와 수열합성법으로 제작한 광전화학셀 전극용 나노 계층형 아연산화물 구조 연구 (ZnO Hierarchical Nanostructures Fabricated by Electrospinning and Hydrothermal Methods for Photoelectrochemical Cell Electrodes)

  • 이환표;정혁;김옥길;김효진;김도진
    • 한국재료학회지
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    • 제23권11호
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    • pp.655-660
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    • 2013
  • Photoelectrochemical cells have been used in photolysis of water to generate hydrogen as a clean energy source. A high efficiency electrode for photoelectrochemical cell systems was realized using a ZnO hierarchical nanostructure. A ZnO nanofiber mat structure was fabricated by electrospinning of Zn solution on the substrate, followed by oxidation; on this substrate, hydrothermal synthesis of ZnO nanorods on the ZnO nanofibers was carried out to form a ZnO hierarchical structure. The thickness of the nanofiber mat and the thermal annealing temperature were determined as the parameters for optimization. The morphology of the structures was examined by field-emission scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The performance of the ZnO nanofiber mat and the potential of the ZnO hierarchical structures as photoelectrochemical cell electrodes were evaluated by measurement of the photoelectron conversion efficiencies under UV light. The highest photoconversion efficiency observed was 63 % with a ZnO hierarchical structure annealed at $400^{\circ}C$ in air. The morphology and the crystalline quality of the electrode materials greatly influenced the electrode performance. Therefore, the combination of the two fabrication methods, electrospinning and hydrothermal synthesis, was successfully applied to fabricate a high performance photoelectrochemical cell electrode.

Differential Expression of Laccase Genes in Pleurotus ostreatus and Biochemical Characterization of Laccase Isozymes Produced in Pichia pastoris

  • Park, Minsa;Kim, Minseek;Kim, Sinil;Ha, Byeongsuk;Ro, Hyeon-Su
    • Mycobiology
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    • 제43권3호
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    • pp.280-287
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    • 2015
  • In this study, transcriptome analysis of twelve laccase genes in Pleurotus ostreatus revealed that their expression was differentially regulated at different developmental stages. Lacc5 and Lacc12 were specifically expressed in fruiting bodies and primordia, respectively, whereas Lacc6 was expressed at all developmental stages. Lacc1 and Lacc3 were specific to the mycelial stage in solid medium. In order to investigate their biochemical characteristics, these laccases were heterologously expressed in Pichia pastoris using the pPICHOLI-2 expression vector. Expression of the laccases was facilitated by intermittent addition of methanol as an inducer and sole carbon source, in order to reduce the toxic effects associated with high methanol concentration. The highest expression was observed when the recombinant yeast cells were grown for 5 days at $15^{\circ}C$ with intermittent addition of 1% methanol at a 12-hr interval. Investigation of enzyme kinetics using 2,2-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid (ABTS) as a substrate revealed that the primordium-specific laccase Lacc12 was 5.4-fold less active than Lacc6 at low substrate concentration with respect to ABTS oxidation activity. The optimal pH and temperature of Lacc12 were 0.5 pH units and $5^{\circ}C$higher than those of Lacc6. Lacc12 showed maximal activity at pH 3.5 and $50^{\circ}C$, which may reflect the physiological conditions at the primordiation stage.