• Title/Summary/Keyword: Substrate bias

Search Result 477, Processing Time 0.024 seconds

The Effect of Substrate Bias Voltage during the Formation of BN film by R. F. Sputtering Method (RF 스퍼터링법에 의한 BN박막 증착시 기판 바이어스전압의 영향에 관한 연구)

  • 이은국;김도훈
    • Journal of the Korean institute of surface engineering
    • /
    • v.29 no.2
    • /
    • pp.93-99
    • /
    • 1996
  • In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

  • PDF

RF Bias Effect of ITO Thin Films Reactively Sputtered on PET Substrates at Room Temperature

  • Kim, Hyun-Hoo;Shin, Sung-Ho
    • Transactions on Electrical and Electronic Materials
    • /
    • v.5 no.3
    • /
    • pp.122-125
    • /
    • 2004
  • ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

Study on diffusion barrier properties of Tantalum films deposited by substrate bias voltage (Ta 확산 방지막 특성에 미치는 기판 바이어스에 관한 연구)

  • ;;Minoru Isshiki
    • Journal of the Korean Vacuum Society
    • /
    • v.12 no.3
    • /
    • pp.174-181
    • /
    • 2003
  • Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

Pulsed DC Bias Effects on Substrate in TiNx Thin Film Deposition by Reactive RF Magnetron Sputtering at Room Temperature (반응성 RF 마그네트론 스퍼터링에 의한 TiNx 상온 성막에 있어서 기판 상의 펄스상 직류 바이어스 인가 효과)

  • Kim, Seiki
    • Journal of the Korean institute of surface engineering
    • /
    • v.52 no.6
    • /
    • pp.342-349
    • /
    • 2019
  • Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N2/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiNx films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiNx films was decreased with application of the pulsed DC substrate bias voltage. The TiNx films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiNx films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

Influence of bias voltage on properties of carbon nanotubes prepared by MPECVD (마이크로 웨이브를 이용한 탄소나노튜브 성장시 바이어스 전압의 효자)

  • Choi, Sung-Hun;Lee, Jae-Hyeung;Yang, Jong-Seok;Park, Da-Hee
    • Proceedings of the KIEE Conference
    • /
    • 2006.07c
    • /
    • pp.1440-1441
    • /
    • 2006
  • In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

  • PDF

Microstructure and Mechanical Properties of Nanocrystalline TiN Films Through Increasing Substrate Bias (기판 바이어스 인가에 따른 나노결정질 TiN 코팅 막의 미세구조와 기계적 성질변화)

  • Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
    • /
    • v.47 no.6
    • /
    • pp.479-484
    • /
    • 2010
  • Microstructural and mechanical properties of the TiN films deposited on Si substrates under various substrate bias voltages by a reactive magnetron sputtering have been studied. It was found that the crystallographic texture, microstructural morphology and mechanical property of the TiN films were strongly depended on the substrate bias voltage. TiN films deposited without bias exhibited a mixed (200)-(111) texture with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. It is also observed that the crystallite size decreases with increasing bias voltage, which corresponds to the increasing diffraction peak width of XRD patterns. The average surface roughness was calculated from AFM images of the films; these results indicated that the average surface roughness was increased with an increase in the bias voltage of the coatings.

Electrical and Optical Properties of ITO Films Sputtered by RF -bias Voltage and In-Sn Alloy Target

  • Kim, Hyun-Hoo;Shin, Sung-Ho
    • Transactions on Electrical and Electronic Materials
    • /
    • v.5 no.4
    • /
    • pp.153-157
    • /
    • 2004
  • ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

A Study on the Wear Resistance Behaviors of TiN Films on Tool Steels by Cathode Arc Ion Plating Method (음극아크 이온 플레이팅법에 의한 공구강상의 TiN 피막의 내마모 특성에 관한 연구)

  • 김강범;정창준;백영남
    • Journal of the Korean institute of surface engineering
    • /
    • v.28 no.6
    • /
    • pp.343-351
    • /
    • 1995
  • Titanium nitride films have been prepared on various substrates (silicon wafer, HSS) by cathode arc ion plating process to measure microhardness, adhesion and wear-resistant behaviors by changing the substrate bias voltages (0∼-300V), thickness and roughness. Microhardnesses were measured by micro vickers hardness tester, the adhesion strengths were evaluated by acoustic signals through the scratch test with incremental applied load. As the substrate bias voltages were increased, the {111} orientation was predominant, the microhardnesses and adhesion strengths of tool steel were observed to be stronger than those of without subatrate bias voltage. Adhesion strengths of the substrate bias were 4-7 times higher than those of without the substrate bias, confirmed by SEM with EDX. Wear resistances were used pin-on-disk tribotester and TiN costing reduced the abrasive wear. As the substrate bias was increased, the weight loss and the friction coefficient was decreased.

  • PDF

Deposition and characterization of compositional gradient CrNx coatings prepared by arc ion plating

  • Zhang, Min;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2009.05a
    • /
    • pp.177-181
    • /
    • 2009
  • Compositional gradient CrNx coatings were fabricated using arc ion plating in Ar/$N_2$ gaseous mixture by gradually increasing $N_2$ flux rate from 0 to 120 SCCM. The effect of negative substrate bias on the film microstructure and mechanical properties were systematically investigated with XRD, GDOES, and SEM. The results show that substrate bias has an important influence on film growth and microstructure of gradient CrNx coatings. The coatings mainly crystallized in the mixture of hexagonal $Cr_{2}N$ and fcc CrN phases. By increasing substrate bias, film microstructure evolved from an apparent columnar structure to an equiaxed one. With increasing substrate bias, deposition rate first increased, and then decreased. The maximum of deposition rate was 15 nm/min obtained at a bias of -50V.

  • PDF

The Delay time of CMOS inverter gate cell for design on digital system (디지털 시스템설계를 위한 CMOS 인버터게이트 셀의 지연시간)

  • 여지환
    • Proceedings of the Korea Society for Industrial Systems Conference
    • /
    • 2002.06a
    • /
    • pp.195-199
    • /
    • 2002
  • This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

  • PDF