• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1241-1248
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• 2011

Three dimensional quantitative structure-activity relationships (3D-QSARs) between new thiosemicarbazone analogues (1-31) as a substrate molecule and their inhibitory activity against tyrosinase as a receptor were performed and discussed quantitatively using CoMFA (comparative molecular field analysis) and CoMSIA (comparative molecular similarity indices analysis) methods. According to the optimized CoMSIA 2 model obtained from the above procedure, inhibitory activities were mainly dependent upon H-bond acceptor favored field (36.5%) of substrate molecules. The optimized CoMSIA 2 model, with the sensitivity of the perturbation and the prediction, produced by a progressive scrambling analysis was not dependent on chance correlation. From molecular docking studies, it is supposed that the inhibitory activation of the substrate molecules against tyrosinase (PDB code: 1WX2) would not take place via uncompetitive inhibition forming a chelate between copper atoms in the active site of tyrosinase and thiosemicarbazone moieties of the substrate molecules, but via competitive inhibition based on H-bonding.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.204-207
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• 2016

Experimental study of UV-irradiated O₂/H₂ gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O₂/H₂ gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H₂. O₂ gas compete for UV (184.9 nm) absorption with PMMA producing O₃, O(¹D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

• Biomedical Science Letters
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• v.23 no.3
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• pp.251-260
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• 2017

Platelet activation is essential at the sites of vascular injury, which leads to hemostasis through adhesion, aggregation, and secretion process. However, potent and continuous platelet activation may be an important reason of circulatory disorders. Therefore, proper regulation of platelet activation may be an effective treatment for vascular diseases. In this research, inhibitory effects of cordycepin (3'-deoxyadenosine) on platelet activation were determined. As the results, cordycepin increased cAMP and cGMP, which are intracellular $Ca^{2+}$-antagonists. In addition, cordycepin reduced collagen-elevated $[Ca^{2+}]_i$ mobilization, which was increased by a cAMP-dependent protein kinase (PKA) inhibitor (Rp-8-Br-cAMPS), but not a cGMP-protein kinase (PKG) inhibitor (Rp-8-Br-cGMPS). Furthermore, cordycepin increased $IP_3RI$ ($Ser^{1756}$) phosphorylation, indicating inhibition of $IP_3$-mediated $Ca^{2+}$ release from internal store via the $IP_3RI$, which was strongly inhibited by Rp-8-Br-cAMPS, but was not so much inhibited by Rp-8-Br-cGMPS. These results suggest that the reduction of $[Ca^{2+}]_i$ mobilization is caused by the cAMP/A-kinase-dependent $IP_3RI$ ($Ser^{1756}$) phosphorylation. In addition, cordycepin increased the phosphorylation of VASP ($Ser^{157}$) known as PKA substrate, but not VASP ($Ser^{239}$) known as PKG substrate. Cordycepin-induced VASP ($Ser^{157}$) phosphorylation was inhibited by Rp-8-Br-cAMPS, but was not inhibited by Rp-8-Br-cGMPS, and cordycepin inhibited collagen-induced fibrinogen binding to ${\alpha}IIb/{\beta}_3$, which was increased by Rp-8-Br-cAMPS, but was not inhibited by Rp-8-Br-cGMPS. These results suggest that the inhibition of ${\alpha}IIb/{\beta}_3$ activation is caused by the cAMP/A-kinase-dependent VASP ($Ser^{157}$) phosphorylation. In conclusion, these results demonstrate that inhibitory effects of cordycepin on platelet activation were due to inhibition of $[Ca^{2+}]_i$ mobilization through cAMP-dependent $IP_3RI$ ($Ser^{1756}$) phosphorylation and suppression of ${\alpha}IIb/{\beta}_3$ activation through cAMP-dependent VASP ($Ser^{157}$) phosphorylation. These results strongly indicated that cordycepin might have therapeutic or preventive potential for platelet activation-mediated disorders including thrombosis, atherosclerosis, myocardial infarction, or cardiovascular disease.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.10
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• pp.1480-1488
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• 2003

Synthesis of carbon nanomaterials on a substrate coated with metal nitrates using an ethylene fueled inverse diffusion flame was illustrated. The effects of radial distance, residence time of the substrate, and hydrocarbon composition on the synthesis of carbon nanomaterials were investigated. The effects of catalyst metal particles were also studied using SUS304 substrates coated with Fe(NO$_3$)$_3$ (ferric nitrate, nonahydrate) and Ni(NO$_3$)$_2$(nickel nitrate, hexahydrate), and Cu substrate. Carbon nanomaterials, with diameters ranging from 30 - 70 nm, were observed on the substrate for both cases of using substrates only and using them with metal nitrates. In case of using the substrate with metal nitrates, the formation and growth of carbon nanomaterials were occurred in the lower temperature region than that of using the substrates only due to the easy activation of the metal particles coated on the surface of the substrates.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.625-630
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• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

• Applied Biological Chemistry
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• v.40 no.3
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• pp.196-201
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• 1997

Assuming that Asp225 is the substrate specificity determinant of Achromobacter pretense I (APl) which is lysine-specific serine protease, the 225th residue was substituted for other amino acids with a hope that the substrate specificity of a mutant API is altered. Furthermore, to maturate preform of mutant API autocatalytically, Lys(-1) was also replaced by Met, Asp, or Glu. However, all the mutants were not expressed, or accumulated as inactive precursor proteins. This result implicats that Asp225 plays a critical rol in restricted substrate specificity as a lysylendopeptidase but the substrate specificity of API is not determined only by the nature of residue 225.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.37-42
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• 2003

In soldering of electronic packaging, the research on substituting lead-free solder materials for Pb-Sn alloys has become active due to environmental and health concerns over the use of lead. The reliability of the solder joint is very important in the development of solder materials and it is known that it is related to wettability of the solder over the substrate and microstructural evolution during soldering. It is also highly affected by type and extent of the interfacial reaction between solder and substrate and therefore, it is necessary to understand the interfacial reaction between solder and substrate completely. In order to predict the intermetallic compound (IMC) phase which forms first at the substrate/solder interface during the soldering process, a thermodynamic methodology has been suggested. The activation energy for the nucleation of each IMC phases is represented by a function of the interfacial energy and the driving force for phase formation. From this, it is predicted that the IMC phase with the smallest activation energy forms first. The grain morphology of the IMC at the solder joint is also explained by the calculations which use the energy. The Jackson parameter of the IMC grain with a rough surface is smaller than 2 but it is larger than 2 in the case of faceted grains.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.573-577
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• 2014

The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.4
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• pp.191-196
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• 1999

4-probe resistivity measurement technique was used to study hydrogen A-D(Absorption-Desorption)kinetics on Pd films(18 to 67nm thick) from 25 to $50^{\circ}C$, from 0 to 5 torr hydrogen pressure. Pd films were made on sapphire substrate by thermal evaporation technique under high vacuum at room temperature. Upto about 100 hydrogen A-D cyclings, no pulverization was observed, but film was detached partially from substrate. Forward reaction and backward reaction rate were analyzed separately. The activation energies of hydrogen A-D processes were obtained from the Arrhenius plot of the reaction rates. The activation energies of Pd films are not strongly dependent on the thickness of the film. But the activation energy of very thin film( l8nm thick) was smaller than the others.